SANKEN 2SB1625

(7 0 Ω ) E
2SB1625
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)
–110
VEBO
IC
ICBO
VCB=–110V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
–5
V
V(BR)CEO
IC=–30mA
–110min
V
–6
A
hFE
VCE=–4V, IC=–5A
5000min∗
IB
–1
A
VCE(sat)
IC=–5A, IB=–5mA
–2.5max
PC
60(Tc=25°C)
W
VBE(sat)
Tj
150
°C
fT
VCE=–12V, IE=0.5A
–100typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
–110typ
pF
V
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
IC
(A)
–5
–5
5
–10
–2
–4
–5
–1
0
–0.1
–6
–0.5 –1
–5 –10
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
40,000
50000
125˚C
10,000
5,000
1,000
500
–1
–5 –6
25˚C
10000
Transient Thermal Resistance
Typ
DC Cur r ent Gai n h F E
p)
–1
–30˚C
5000
1000
500
100
–0.02
–0.05 –0.1
Collector Current I C (A)
–0.5
–1
1
0.5
1
–5 –6
10
Typ
1000 2000
P c – T a Derating
60
–20
120
100
Time t(ms)
Safe Operating Area (Single Pulse)
(V C E =–12V)
–3
5
Collector Current I C (A)
f T – I E Characteristics (Typical)
–2
θ j-a – t Characteristics
–10
100
10
he
at
si
nk
Without Heatsink
Natural Cooling
40
ite
–1
–0.5
–0.1
20
s
fin
40
m
s
In
60
DC
0m
ith
80
10
W
Collector Curr ent I C (A)
–5
Ma xim um Powe r Dissipation P C ( W)
DC Cur r ent Gai n h F E
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
Cut -off Fre quen cy f T (M H Z )
0
–50 –100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
–0.5
–2
–1
Collector-Emitter Voltage V C E (V)
–0.05 –0.1
–3
Tem
I C =–3A
–4
emp
˚C (
)
Cas
e Te
mp)
–5A
se T
–2
–30
Collector Current I C (A)
–2
(V CE =–4V)
–6
–3
se
–0 .3 m A
I B =–0. 1mA
200
–0.2
I C – V BE Temperature Characteristics (Typical)
(Ca
A
–4
0
Weight : Approx 6.5g
a. Type No.
b. Lot No.
E
(Ca
.4m
–0. 2m A
0
1.1typ
C
˚C
–0
3.2typ
B
3.35
1.5
tf
(µs)
125
–0
1.1typ
5
4.4
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
–1
–5m
A
–6
tstg
(µs)
ton
(µs)
V CE ( sa t ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
m
.5
IB2
(mA)
Collector Current I C (A)
6
–30
IB1
(mA)
VBB2
(V)
VBB1
(V)
0.65 +0.2
-0.1
5.45±0.1
1.5
θ j - a (˚C /W )
RL
(Ω)
0.8
2.15
1.05 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
VCC
(V)
3.45 ±0.2
1.75
25˚C
Tstg
5.5±0.2
ø3.3±0.2
a
b
V
–3.0max
IC=–5A, IB=–5mA
15.6±0.2
3.0
VCEO
Unit
0.8±0.2
V
2SB1625
5.5
–110
External Dimensions FM100(TO3P)
(Ta=25°C)
Conditions
1.6
VCBO
Symbol
3.3
Unit
9.5±0.2
■Electrical Characteristics
(Ta=25°C)
2SB1625
Symbol
C
Application : Audio, Series Regulator and General Purpose
23.0±0.3
■Absolute maximum ratings
Equivalent circuit
16.2
Darlington
B
20
Without Heatsink
0
0.02
0.05
0.1
0.5
1
Emitter Current I E (A)
52
5 6
–0.05
–5
–10
–50
–100 –150
Collector-Emitter Voltage V C E (V)
3.5
0
0
25
50
75
100
Ambient Temperature Ta(˚C)
125
150