(7 0 Ω ) E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO Ratings Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat) IC=–7A, IB=–7mA –3.0max V 150 °C fT VCE=–12V, IE=2A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF IC –12 A IB –1 A PC 150(Tc=25°C) Tj 2-ø3.2±0.1 9 7 V V(BR)CEO a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ –1.2m A –1.0 mA –0.8m A –0.6mA –4 I B =–0.4mA –2 0 0 –2 –4 –10 –2 –10A –7A I C =–5A –1 0 –0.2 –6 h FE – I C Characteristics (Typical) –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) Typ 10,000 5,000 –5 –10–12 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C 25˚C 10000 –30˚C 5000 1000 800 –0.2 –0.5 Collector Current I C (A) 80 –10 –1 –5 0.5 0.1 1 –10 –12 5 10 10 0m DC m s s ite he 80 at si nk Without Heatsink Natural Cooling fin –0.5 120 40 –0.1 1 Emitter Current I E (A) 5 10 2000 P c – T a Derating –1 –0.05 –3 500 1000 160 –5 20 100 In 40 0.5 50 Time t(ms) ith Typ 0.05 0.1 10 W Collecto r Cur rent I C (A) 100 –2.5 1 Safe Operating Area (Single Pulse) –30 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F re quen cy f T (MH Z ) 0 2 M aximu m Power Dissip ation P C (W) D C Cur r ent Gai n h F E 0 Base-Emittor Voltage V B E (V) 50000 60 –4 –50 –100 –200 (V C E =–4V) –1 –6 Base Current I B (mA) 40,000 –0.5 –8 –2 Collector-Emitter Voltage V C E (V) 1,000 –0.2 (V C E =–4V) mp) Collector Current I C (A) –1.5 mA –6 –12 e Te –2 .0m A –10 –8 –3 (Cas –2 .0 m A 125˚C A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) m E Weight : Approx 18.4g a. Part No. b. Lot No. θ j- a ( ˚C/W) 0 –1 C V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –12 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 mp) Temp ) IEBO 2.1 (Case V –5 21.4±0.3 –150 VEBO 6.0±0.2 36.4±0.3 IC=–30mA VCEO Tstg Conditions VCB=–160V –30˚C V External Dimensions MT-200 (Ta=25°C) e Te Unit –160 ■Electrical Characteristics (Cas Ratings VCBO C Application : Audio, Series Regulator and General Purpose 25˚C Symbol Equivalent circuit 4.0max ■Absolute maximum ratings (Ta=25°C) 20.0min Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 49