SANKEN 2SB1626

(7 0 Ω ) E
2SB1626
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495)
V
ICBO
VCEO
–110
V
IEBO
VEBO
–5
V
V(BR)CEO
IC
–6
A
IB
–1
PC
Tj
2SB1626
Unit
VCB=–110V
–100max
µA
10.1±0.2
–100max
µA
–110min
V
hFE
VCE=–4V, IC=–5A
5000min∗
A
VCE(sat)
IC=–5A, IB=–5mA
–2.5max
30(Tc=25°C)
W
VBE(sat)
IC=–5A, IB=–5mA
–3.0max
V
150
°C
fT
VCE=–12V, IE=0.5A
100typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
110typ
pF
16.9±0.3
VEB=–5V
IC=–30mA
ø3.3±0.2
a
b
3.9
V
1.35±0.15
1.35±0.15
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
IC
(A)
–5
5
–10
V CE ( sat ) – I B Characteristics (Typical)
–2
–4
0
–0.1
–6
–0.5 –1
Collector-Emitter Voltage V C E (V)
–5 –10
(V C E =–4V)
50000
125˚C
Typ
DC Cur rent Gain h F E
10,000
5,000
1,000
500
–1
–5 –6
5.0
1.0
25˚C
10000
–30˚C
5000
1000
500
100
–0.02
–0.05 –0.1
Collector Current I C (A)
–0.5
–1
–5 –6
0.3
)
mp)
p)
Cas
e Te
emp
˚C (
–3
1
10
100
1000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
120
–2
0.5
Collector Current I C (A)
f T – I E Characteristics (Typical)
–30
–1
θ j-a – t Characteristics
30
–20
–10
10
Typ
s
s
C
–0.1
nk
20
si
Without Heatsink
Natural Cooling
at
–0.5
he
–1
20
ite
40
m
fin
60
D
0m
In
80
10
ith
Collecto r Cur ren t I C (A)
–5
W
Cut-o ff F requ ency f T (MH Z )
100
M aximu m Power Dissipa tion P C (W)
DC Cur rent Gain h F E
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
40,000
–0.5
0
–50 –100
(V C E =–4V)
–0.05 –0.1
–2
Base Current I B (mA)
h FE – I C Characteristics (Typical)
200
–0.2
Tem
I C =–3A
–1
–4
se
–5A
se T
–2
(Ca
Collector Current I C (A)
I B =–0. 1mA
–2
(V C E =–4V)
–6
–3
25˚C
–0 .3 m A
–0. 2m A
0
I C – V BE Temperature Characteristics (Typical)
(Ca
mA
–4
0
1.1typ
˚C
.
.4
–0
3.2typ
B C E
125
–0
Weight : Approx 2.0g
a. Type No.
b. Lot No.
tf
(µs)
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
–1
–5m
A
–6
5m
tstg
(µs)
1.1typ
5
–5
I C – V CE Characteristics (Typical)
ton
(µs)
IB2
(mA)
IB1
(mA)
Collector Current I C (A)
6
–30
VBB2
(V)
VBB1
(V)
θ j - a ( ˚ C/W)
RL
(Ω)
2.4±0.2
2.2±0.2
Transient Thermal Resistance
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
4.2±0.2
2.8 c0.5
4.0±0.2
–110
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
0.8±0.2
VCBO
Symbol
±0.2
Unit
Tstg
Application : Audio, Series Regulator and General Purpose
■Electrical Characteristics
(Ta=25°C)
2SB1626
Symbol
C
8.4±0.2
■Absolute maximum ratings
Equivalent circuit
13.0min
Darlington
B
10
Without Heatsink
2
0
0.02
0.05
0.1
0.5
1
Emitter Current I E (A)
5 6
–0.05
–3
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
53