Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA 3.0max V 150 °C fT VCE=12V, IE=–2A 70typ MHz –55to+150 °C COB VCB=10V, f=1MHz 120typ pF Tj Tstg 19.9±0.3 IC=30mA VCE=4V, IC=10A a ø3.2±0.1 b V 2 3 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 0 2 4 I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance DC Curr ent Gain h F E 50000 DC Curr ent Gain h F E 10000 25 5000 –3 ˚C 0˚C 1000 1 5 10 500 02 15 0.5 0 f T – I E Characteristics (Typical) 1 5 10 15 1.0 0.5 0.1 1 10 P c – T a Derating m 0m ite he at si nk Without Heatsink Natural Cooling fin 1 0.5 In 5 100 ith s Collecto r Cur ren t I C (A) s 10 DC W Maxim um Power Dissipa tion P C (W) 10 20 50 0.1 –0.5 –1 Emitter Current I E (A) 156 –5 –10 1000 2000 130 10 40 100 Time t(ms) 50 60 2.2 3.0 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 0 –0.02 –0.05 –01 1 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T ( MH Z ) ) 0 100 200 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 emp I C =.15A 10 (Cas 0.5mA 2 eT Collector Current I C (A) 0. 8m A 10 Cas 1. 0m A 25˚C mA 125 1.5 (V CE =4V) 15 3 Collector Current I C (A) 2m A I C – V BE Temperature Characteristics (Typical) θ j- a (˚ C/W) 50mA 3mA 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 10mA C ˚C ( I C – V CE Characteristics (Typical) 15 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 mp) V 15 e Te 5 IC mp) VEBO 2.0±0.1 (Cas 150 4.8±0.2 –30˚C VCEO 15.6±0.4 9.6 e Te V 1.8 VCB=150V 150 2.0 Unit ICBO VCBO Symbol 0.05 3 5 10 E External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 5.0±0.2 ■Electrical Characteristics Conditions Ratings 4.0 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150