2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Symbol ICBO Conditions 2SC2922 Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 VCEO 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 50typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 a b IC (A) VB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 –5 1 –1 0.2typ 1.3typ 0.45typ V CE ( sat ) – I B Characteristics (Typical) 50mA I B =20mA 0 1 0 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 50 1 5 10 125˚C Transient Thermal Resistance DC Cur rent Gain h F E 100 100 25˚C –30˚C 50 10 0.02 17 Collector Current I C (A) 0.1 0.5 1 5 10 17 0.5 0.1 nk Collector-Emitter Voltage V C E (V) 300 si 100 at 10 he 2 120 ite Without Heatsink Natural Cooling fin 1 160 In Collector Cur rent I C (A) 2000 ith Emitter Current I E (A) –10 1000 W Maxim um Power Di ssip ation P C (W) s 5 0.2 –5 100 P c – T a Derating DC 10 0.5 –1 10 200 m 20 –0.1 1 Time t(ms) 10 40 0 –0.02 p) 1 Safe Operating Area (Single Pulse) Typ 2.4 θ j-a – t Characteristics 50 80 2 2 (V C E =12V) 60 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut -off Fre quency f T ( MH Z ) DC C urrent G ain h FE 200 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 0.02 5 5A Collector-Emitter Voltage V C E (V) p) I C =10A 1 Tem 5 10 em 100 mA 2 eT A as 200m 10 15 (C mA Weight : Approx 18.4g a. Type No. b. Lot No. (V C E =4V) 5˚C 300 E 17 3 12 Collector Current I C (A) 15 mA mA 500 A 400m 25 600 Collector Current I C (A) A 3.0 +0.3 -0.1 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) 0m Collector-Emitter Saturation Voltage V C E(s a t) (V ) A 1.5 70 0.65 +0.2 -0.1 1.05 +0.2 -0.1 B RL (Ω) 1A 2 3 5.45±0.1 VCC (V) 17 9 21.4±0.3 30min∗ ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.1 se Tstg 6.0±0.2 36.4±0.3 (Ca V ˚C Unit 180 –30 2SC2922 VCBO External Dimensions MT-200 (Ta=25°C) ˚C Symbol ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20.0min LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 61