SANKEN 2SC3284

2SC3284
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)
ICBO
VCB=150V
100max
µA
V
IEBO
VEB=5V
100max
µA
V
V(BR)CEO
IC=25mA
150min
V
A
hFE
VCE=4V, IC=5A
50min∗
IC=5A, IB=0.5A
2.0max
V
14
IB
3
A
VCE(sat)
PC
125(Tc=25°C)
W
fT
VCE=12V, IE=–2A
60typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
200typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
20.0min
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
60
12
5
10
–5
0.5
–0.5
0.2typ
1.5typ
0.35typ
I B =20mA
0
0
1
2
3
0
4
0
0.2
0.4
0.6
0.8
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
200
200
1
5
100
25˚C
–30˚C
50
20
0.02
10 14
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
50
Collector Current I C (A)
1
0.1
0.5
2
1
5
10 14
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
40
130
1m
10
10
Typ
0.2
3
10
100
Collector-Emitter Voltage V C E (V)
200
Collector Curren t I C ( A)
nk
Emitter Current I E (A)
–10
si
–1
at
–0.1
he
Without Heatsink
Natural Cooling
ite
1
100
fin
5
0.5
0
–0.02
s
C
In
20
D
ith
40
10
s
s
W
60
0m
m
Maxim um Power Di ssip ation P C (W)
80
Cut-o ff F reque ncy f T (MH Z )
DC Curr ent Gain h F E
125˚C
0.5
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
20
0.02
p)
I C =10A
5A
Collector-Emitter Voltage V C E (V)
100
5
em
1
eT
50mA
4
10
as
10 0m A
8
2
(C
A
15 0m A
5˚C
Collector Current I C (A)
200m
(V C E =4V)
14
3
12
12
mA
Collector Current I C (A)
300
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚C/W)
mA
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
400
75
0m
A
14
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
A
0m
60 mA
0
50
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.2±0.1
b
p)
Tstg
a
Tem
5
IC
se
VEBO
2.0±0.1
(Ca
150
4.8±0.2
˚C
VCEO
15.6±0.4
9.6
–30
V
˚C
150
25
VCBO
1.8
Unit
2.0
2SC3284
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Unit
5.0±0.2
■Electrical Characteristics
(Ta=25°C)
2SC3284
4.0
Symbol
19.9±0.3
■Absolute maximum ratings
Application : Audio and General Purpose
4.0max
LAPT
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
65