2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Ratings Unit ICBO VCB=150V 100max µA VCEO 150 V IEBO VEB=5V 100max µA IC=25mA 150min V VCE=4V, IC=5A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 125(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min 3 PC 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.2typ 1.5typ 0.35typ I B =20mA 0 0 1 2 3 5A 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 10 14 Transient Thermal Resistance DC Cur rent Gain h FE DC Curr ent Gain h F E 125˚C 0.5 Collector Current I C (A) 0.1 0.5 p) 1 2 1 5 10 14 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Tem 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 p) I C =10A Collector-Emitter Voltage V C E (V) 100 5 se 1 em 50mA 4 10 eT 10 0m A 8 2 as 15 0m A (C A 5˚C Collector Current I C (A) 200m 12 3 (V C E =4V) 14 3 Collector Current I C (A) 12 A 00m 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) mA C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 400 75 0m A 14 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) A 0m 60 mA 0 0 5 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a (Ca hFE 2.0±0.1 ˚C V(BR)CEO A 4.8±0.2 –30 V 14 ˚C 5 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit 150 2.0 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 25 Symbol ■Electrical Characteristics (Ta=25°C) 4.0 ■Absolute maximum ratings Application : Audio and General Purpose 4.0max LAPT Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 130 1m 10 Typ 66 0.2 3 10 100 Collector-Emitter Voltage V C E (V) 200 nk Emitter Current I E (A) –10 si Without Heatsink Natural Cooling at 1 100 he –1 C ite –0.1 s 5 0.5 0 –0.02 m s fin 20 D 0m In 40 10 ith Collector Curre nt I C ( A) 60 s W Cut-o ff F requ ency f T (MH Z ) 10 Maxim um Power Dissip ation P C (W) 80 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150