SANKEN 2SC4131

2SC4131
LOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor
V
60 to 360
VCE=1V, IC=5A
IB
4
A
VCE(sat)
IC=5A, IB=80mA
0.5max
PC
60(Tc=25°C)
W
VBE(sat)
IC=5A, IB=80mA
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
18typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
210typ
pF
Tstg
ø3.3±0.2
a
b
3.3
3.0
V
1.75
1.05
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
20
4
5
10
–5
0.08
–0.08
0.5typ
2.0typ
0.4typ
4
I B =7mA
0
0
2
4
15A
0
0.002
0.01
0.1
1
h FE – I C Temperature Characteristics (Typical)
12 5˚ C
500
2 5 ˚C
– 3 0 ˚C
100
1
70
0.02
10 15
0.1
Collector Current I C (A)
1
10 15
0.3
1
10
5
ite
he
at
si
nk
10
fin
5
20
Without Heatsink
0.4
3
40
In
M aximum Power Dissipa ti on P C (W)
s
ith
Collect or Curr ent I C (A)
0m
Without Heatsink
Natural Cooling
10
1000
W
DC
s
10
s
1
5
100
P c – T a Derating
m
10
t on
1
0.5
Time t(ms)
10
tf
0.5
1
60
1m
0.5
Collector Current I C (A)
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
V C C 20V
I C =5A
I B1 =–I B2
=80mA
1.5
1.0
3
40
1
0.1
0.08
0.1
0.5
Collector Current I C (A)
t on •t stg •t f – I C Characteristics (Typical)
t o n • t s t g • t f ( µ s)
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
100
Switching Time
DC Cur rent Gain h FE
(V C E =1V)
1000
t stg
0
Base-Emittor Voltage V B E (V)
(V C E =1V)
5
0
2
Base Current I B (A)
h FE – I C Characteristics (Typical)
0.1
)
5A
3A
I C =1 A
6
1000
70
0.02
5
10A
Collector-Emitter Voltage V C E (V)
500
mp
0.5
Te
15mA
10
se
25mA
E
(V C E =1V)
(Ca
8
1.0
θ j - a (˚C /W)
Collector Current I C (A)
40mA
3.35
Weight : Approx 2.0g
a. Type No.
b. Lot No.
15
1.3
˚C
80mA
12
C
125
85mA
0.65 +0.2
-0.1
1.5
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
15
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
+0.2
-0.1
5.45±0.1
1.5
VCC
(V)
0.8
2.15
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
0.8±0.2
50min
5.5
hFE
µA
IC=25mA
1.6
A
VEB=15V
V(BR)CEO
mp)
15(Pulse25)
IC
IEBO
3.45 ±0.2
e Te
V
5.5±0.2
(Cas
15
10max
15.6±0.2
)
V
VEBO
µA
–30˚C
50
10max
emp
VCEO
VCB=100V
ICBO
se T
V
Unit
(Ca
100
2SC4131
25˚C
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
23.0±0.3
Unit
9.5±0.2
■Electrical Characteristics
2SC4131
Symbol
16.2
■Absolute maximum ratings (Ta=25°C)
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
50
Collector-Emitter Voltage V C E (V)
100
3.5
0
0
50
100
150
Ambient Temperature Ta(˚C)
89