2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF Tstg 3.9 IB ø3.3±0.2 a b 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 1.2typ 1 1mA 0.5mA 0 0 1 2 3 4 5 0.5 0 0.001 0.005 0.01 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) Transient Thermal Resistance DC Cur rent Gain h FE 125˚C 1000 Typ 500 1 3 25 ˚C 500 – 3 0 ˚C 100 0.01 0.1 Collector Current I C (A) f T – I E Characteristics (Typical) 30 0.5 1 3 10 100 10 0m m s s at si nk –2 he –1 10 Without Heatsink 0.05 –0.5 ite 0.1 fin Without Heatsink Natural Cooling In 0.5 20 ith DC 1 W 10 P c – T a Derating s Typ 1000 Time t(ms) 1m 20 –0.05 –0.1 V CB =10V I E =–2A 1 30 10 Emitter Current I E (A) 1 0.5 10 5 0 –0.005 –0.01 θ j-a – t Characteristics 5 Safe Operating Area (Single Pulse) (V C E =12V) 1.0 1.1 0.5 Collector Current I C (A) Collect or Curr ent I C (A) DC Cur rent Gain h FE (V C E =4V) 2000 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) Cut-o ff F reque ncy f T (MH Z ) 0 1 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 p) 2A I C =1A 6 2000 100 0.01 1 3A Collector-Emitter Voltage V C E (V) 1000 2 em 2mA 1.0 eT 3mA 3 Cas 5mA 2 (V C E =4V) 1.0 ˚C ( 8mA 125 A Collector Current I C (A) m M aximum Power Dissipa ti on P C (W) Collector Current I C (A) IB 2 =1 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) 3 Weight : Approx 2.0g a. Type No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 ) IEBO Temp V (Case 6 –30˚C VEBO 4.0±0.2 V 0.8±0.2 80 4.2±0.2 2.8 c0.5 mp) 60 10.1±0.2 µA e Te VCEO Unit 10max (Cas V 25˚C 100 8.4±0.2 80 2SC3852A 16.9±0.3 VCBO 2SC3852 Conditions 13.0min Symbol Unit External Dimensions FM20(TO220F) (Ta=25°C) ±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol 2SC3852 2SC3852A Application : Driver for Solenoid and Motor, Series Regulator and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 50 100 150 Ambient Temperature Ta(˚C) 77