SANKEN 2SC4139

2SC4139
Application : Switching Regulator and General Purpose
µA
V
IEBO
VEB=10V
100max
µA
V
10
V
V(BR)CEO
IC=25mA
400min
15(Pulse30)
A
hFE
VCE=4V, IC=8A
10 to 30
IB
5
A
VCE(sat)
IC=8A, IB=1.6A
0.5max
PC
120(Tc=25°C)
W
VBE(sat)
IC=8A, IB=1.6A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–1.5A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
85typ
pF
V
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
25
8
10
–5
0.8
–1.6
1max
3max
0.5max
0
1
2
3
5˚
C
0.5
1
5
–5
5
10
0
20
t on •t stg • t f – I C Characteristics (Typical)
8
t o n• t s t g• t f (µ s)
50
–55˚C
10
0.1
0.5
1
5
10 15
5
t s tg
Transient Thermal Resistance
25˚C
Sw it ching Time
DC C urrent G ain h FE
125˚C
V C C 200V
I C :I B 1 :I B2 =10:1:–2
1
0.5
t on
tf
0.1
0.5
1
5
10
15
0.1
1
10
P c – T a Derating
Ma xim um Powe r Dissipat io n P C (W)
100
Collector-Emitter Voltage V C E (V)
500
nk
50
si
10
at
Without Heatsink
Natural Cooling
L=3mH
IB2=–1A
Duty:less than 1%
100
he
Collector Curr ent I C (A)
1000
ite
1
5
100
fin
Collector-Emitter Voltage V C E (V)
500
)
0.5
In
100
Temp)
1
ith
1
10
5
1.2
W
Collect or Cur ren t I C (A)
s
Without Heatsink
Natural Cooling
1.0
120
0µ
5
0.8
Time t(ms)
10
10
0.6
θ j-a – t Characteristics
50
50
0.4
2
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
50
10
0.2
Collector Current I C (A)
Collector Current I C (A)
5
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.05
mp)
˚C
Collector Current I C (A)
h FE – I C Characteristics (Typical)
e Te
2
(
V C E (sat)
0.1
Collector-Emitter Voltage V C E (V)
5
0.02
4
Cas
)
Temp
6
˚C (
(Case
12
0
0.03 0.05
4
Collector Current I C (A)
125˚C
0.5
Temp)
θ j- a (˚ C/W)
0
ase
25˚C (C
125
I B =100mA
e Temp)
–55˚C (Cas
em
p)
˚C
200mA
5
1.0
eT
400m A
8
V B E (sat)
25
600mA
10
(V C E =4V)
10
1.5
as
Collector Current I C (A)
800 mA
1.4
E
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
C
1 .2 A
5A
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V )
1.
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
15
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.2±0.1
b
(Case
Tstg
a
–55˚C
IC
Temp
VEBO
2.0±0.1
(Case
400
4.8±0.2
25˚C
VCEO
15.6±0.4
9.6
1.8
100max
5.0±0.2
VCB=500V
V
2.0
ICBO
500
19.9±0.3
Unit
VCBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SC4139
Unit
20.0min
Symbol
Conditions
2SC4139
Symbol
4.0max
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
4.0
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
50
3.5 Without Heatsink
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
91