ETC 2SC4662

2SC4662
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
µA
IEBO
VEB=10V
100max
µA
V(BR)CEO
IC=25mA
400min
V
hFE
VCE=4V, IC=1.5A
10 to 30
IB
2
A
VCE(sat)
IC=1.5A, IB=0.3A
0.5max
PC
30(Tc=25°C)
W
VBE(sat)
IC=1.5A, IB=0.3A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.3A
20typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
30typ
pF
3.9
V
–0.3
0.15
tf
(µs)
2.5max
1max
0.5max
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
(V C E =4V)
5
2
Collector Current I C (A)
mp)
p)
ase Tem
125˚C (C
C
125˚
V C E (sat)
0
0.01
0.05
p)
em
Temp)
Te
25˚C (Case
2
0.1
0.5
(C
1
as
1
˚C (
–55˚C (Case
3
eT
V B E (sat)
Cas
–55˚C
1
4
)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
I C – V CE Characteristics (Typical)
25˚C
0
5
0
0.2
–55˚C
10
5
0.01
0.05
0.1
0.5
1
5
θ j - a ( ˚ C/W)
V C C 200V
I C :I B 1 :I B2 =10:1:–2
t s tg
1
0.5
t on
tf
0.1
0.1
0.5
1
3
0.5
0.4
10
10
ite
he
at
si
nk
Collect or Cur re nt I C (A)
fin
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
20
In
1
0.5
1000
ith
5
Without Heatsink
Natural Cooling
100
P c – T a Derating
Ma xim um Powe r Dissipat io n P C (W)
s
1
0.5
1
W
5
0µ
1.4
30
10
10
1. 2
Time t(ms)
20
20
1.0
1
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.8
5
Collector Current I C (A)
Collector Current I C (A)
Collector Cur rent I C (A)
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
25˚C
Sw it ching Time
DC C urrent G ain h FE
3
125˚C
0.6
θ j-a – t Characteristics
t on •t stg • t f – I C Characteristics (Typical)
(V C E =4V)
50
0.4
Base-Emittor Voltage V B E (V)
Collector Current I C (A)
h FE – I C Temperature Characteristics (Typical)
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
125
–5
10
tstg
(µs)
ton
(µs)
mp
1.5
133
IB2
(A)
IB1
(A)
Te
200
VBB2
(V)
VBB1
(V)
2.4±0.2
2.2±0.2
e
IC
(A)
RL
(Ω)
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
1.35±0.15
)
Tstg
ø3.3±0.2
a
b
Temp
A
(Case
5(Pulse10)
IC
mp)
V
–55˚C
V
10
e Te
400
VEBO
4.2±0.2
2.8 c0.5
(Cas
VCEO
10.1±0.2
25˚C
ICBO
4.0±0.2
100max
V
0.8±0.2
VCB=500V
500
±0.2
Unit
16.9±0.3
Ratings
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
Symbol
Unit
8.4±0.2
■Electrical Characteristics
Ratings
Symbol
13.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
10
Without Heatsink
2
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
117