SANKEN 2SC4557

2SC4557
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Unit
VCB=800V
100max
µA
VCEO
550
V
IEBO
VEB=7V
100max
µA
7
V
V(BR)CEO
V
10(Pulse20)
A
hFE
V
5
A
VCE(sat)
IC=5A, IB=1A
0.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=5A, IB=1A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
6typ
MHz
°C
COB
VCB=10V, f=1MHz
105typ
3.3
pF
1.75
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
5.45±0.1
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
50
5
10
–5
0.75
–1.5
1max
5max
0.5max
I B =100mA
2
0
0
1
2
3
–55˚C (Case Temp)
Temp)
25˚C (Case
p)
ase Tem
125˚C (C
ase
125˚C (C
0.05
0.1
0.5
Te m
–5
5
1
5˚C
0
10
t on •t stg • t f – I C Characteristics (Typical)
10
–5 5˚ C
10
0.5
1
5
10
t s tg
5
V C C 250V
I C :I B1 :–I B 2 =10:1.5:3
1
0.5
t on
tf
0.1
0.2
0.5
20
1
5
10
1
0.5
0.1
1
10
P c – T a Derating
he
40
at
si
nk
Ma xim um Powe r Dissipat io n P C (W)
ite
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
60
fin
Collect or Cur re nt I C (A)
1000
In
1
0.5
100
ith
5
Without Heatsink
Natural Cooling
1.2
80
10
1
1.0
Time t(ms)
s
5
0.8
W
Collector Cur rent I C (A)
0µ
0.6
θ j-a – t Characteristics
20
10
0.4
2
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.2
Collector Current I C (A)
Collector Current I C (A)
0.5
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
25 ˚C
Sw it ching Time
DC C urrent G ain h FE
125˚ C
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
50
)
p)
Collector Current I C (A)
h FE – I C Temperature Characteristics (Typical)
0.05
p)
25˚C
V C E (sat)
Collector-Emitter Voltage V C E (V)
5
0.02
4
2
0
0.02
4
6
em
200mA
4
V B E (sat)
1
8
eT
400m A
6
(V CE =4V)
10
2
Cas
Collector Current I C (A)
600 mA
E
˚C (
80 0m A
8
C
Weight : Approx 2.0g
a. Type No.
b. Lot No.
125
1A
Collector Current I C (A)
A
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
θ j- a (˚ C/W)
1.2
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V )
10
4.4
B
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
I C – V CE Characteristics (Typical)
0.8
2.15
Temp)
–55 to +150
3.0
IB
Tstg
ø3.3±0.2
a
b
(Case
10 to 28
–55˚C
550min
3.45 ±0.2
Temp
IC=10mA
VCE=4V, IC=5A
5.5±0.2
(Case
IC
15.6±0.2
25˚C
VEBO
0.8±0.2
2SC4557
ICBO
5.5
Conditions
V
1.6
Unit
900
23.0±0.3
2SC4557
VCBO
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
9.5±0.2
Symbol
■Electrical Characteristics
16.2
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
20
Without Heatsink
0.1
10
50
100
500
Collector-Emitter Voltage V C E (V)
1000
0.1
10
50
100
500
Collector-Emitter Voltage V C E (V)
1000
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
115