SANKEN 2SD2401

C
Equivalent circuit
2SD2401
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)
2SD2401
Unit
ICBO
VCB=160V
100max
µA
V
IEBO
VEB=5V
100max
µA
V
5
V
V(BR)CEO
IC=30mA
150min
IC
12
A
hFE
VCE=4V, IC=7A
5000min∗
IB
1
A
VCE(sat)
IC=7A, IB=7mA
2.5max
V
IC=7A, IB=7mA
3.0max
V
PC
150(Tc=25°C)
W
VBE(sat)
Tj
150
°C
fT
VCE=12V, IE=–2A
55typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
95typ
pF
a
b
2
3
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
B
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
70
10
7
10
–5
7
–7
0.5typ
10.0typ
1.1typ
I B =0.4mA
2
0
0
2
4
I C =5A
1
0
6
0.2
0.5
1
5
10
50
1
(V C E =4V)
Typ
10000
5000
125˚C
10000
25˚C
5000
–30˚C
Transient Thermal Resistance
DC Cur rent Gain h F E
70000
50000
1000
5
600
0.2
10 12
0.5
Collector Current I C (A)
2.6
1
5
10 12
2
1
0.5
0.1
1
5
10
50
100
500 1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
40000
DC Cur rent Gain h F E
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
1
0
100 200
Base Current I B (mA)
h FE – I C Characteristics (Typical)
0.5
4
2
Collector-Emitter Voltage V C E (V)
1000
02
6
)
I C =7A
mp)
0.6mA
4
I C =10A
emp
0.8mA
8
p)
6
2
Tem
1.0 mA
se
1.2m A
8
10
(Ca
1.5 mA
˚C
Collector Current I C (A)
A
125
2 .0 m
10
(V C E =4V)
12
Collector Current I C (A)
mA
E
I C – V BE Temperature Characteristics (Typical)
3
θ j- a ( ˚C/W)
A
10m
2.5
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
I C – V CE Characteristics (Typical)
3.0 +0.3
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
12
0.65 +0.2
-0.1
1.05 +0.2
-0.1
e Te
Tstg
9
7
VEBO
2.1
2-ø3.2±0.1
Cas
150
24.4±0.2
˚C (
VCEO
6.0±0.2
36.4±0.3
–30
V
se T
160
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
30
80
10
160
he
80
at
si
nk
Without Heatsink
Natural Cooling
20
ite
0.5
fin
1
120
In
Maximu m Power Dissipa tion P C (W)
s
ith
Collector Curr ent I C (A)
0m
W
40
DC
s
Typ
10
5
m
Cu t-of f Fr eque ncy f T (MH Z )
10
100
60
40
0.1
0
–0.02
–0.1
–1
Emitter Current I E (A)
150
–10
E
External Dimensions MT-200
(Ta=25°C)
Conditions
Symbol
(Ca
VCBO
■Electrical Characteristics
25˚C
Unit
21.4±0.3
2SD2401
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
(7 0 Ω )
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
B
0.05
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
150
200
5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150