Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB VCB=10V, f=1MHz 120typ pF A hFE 1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C –55 to +150 °C 7 17 IB 9 a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 0 2 4 I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 10000 5000 1000 12 5˚C Transient Thermal Resistance D C Cur r ent Gai n h F E 50000 Typ 10000 25 5000 –30 ˚C ˚C 1000 1 5 10 500 02 17 0.5 Collector Current I C (A) 0 1 1 5 10 17 1 0.5 0.1 1 10 200 120 ite he at si nk Without Heatsink Natural Cooling fin 1 0.5 In 5 160 ith Ma ximum Po we r Dissipatio n P C (W) s W Collector Cur rent I C (A) s 0m m DC 10 10 10 20 1000 2000 P c – T a Derating 50 40 100 Time t(ms) Safe Operating Area (Single Pulse) 60 2.6 2 (V C E =12V) 80 2 θ j-a – t Characteristics Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff Fr equ ency f T ( MH Z ) D C Cur r ent Gai n h F E 0 100 200 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 10 p) I C =.15A Tem 0.5mA 2 se 10 (Ca 0. 8m A 15 125 Collector Current I C (A) 1. 0m A (V C E =4V) 17 Collector Current I C (A) 1 .5 m A mA I C – V BE Temperature Characteristics (Typical) 3 θ j- a ( ˚C/W) A 2 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 15 3m 50mA 17 E Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) 10mA C ˚C I C – V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 mp) IC 2-ø3.2±0.1 e Te V(BR)CEO (Cas IEBO V 2.1 –30˚C V 5 6.0±0.2 36.4±0.3 VEB=5V 150 VEBO Tstg Ratings IC=30mA VCEO E External Dimensions MT-200 (Ta=25°C) Conditions mp) V Symbol e Te 150 VCBO ■Electrical Characteristics (Cas Unit 25˚C Ratings 21.4±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 80 40 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 157