2SD2014 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 75typ MHz °C COB VCB=10V, f=1MHz 45typ pF 3.9 V 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 10 –10 1.0typ 4.0typ 1.5typ 0 0.3mA 0 1 2 3 0 4 1A 0.2 1 Collector-Emitter Voltage V C E (V) 5 10 50 (V C E =4V) 20000 10000 DC C urrent G ain h FE Typ 5000 1000 500 100 5000 125 1 ˚C ˚C 25 0˚C –3 1000 500 100 50 0.5 Transient Thermal Resistance 10000 0.1 50 30 0.03 4 0.1 Collector Current I C (A) 0.5 p) ase Tem ase Tem 1 2 1 4 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) p) p) e Tem 0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =10V) 25 10 si nk Collector Cur rent I C (A) 2 at 0.1 0x he Without Heatsink Natural Cooling 1 00x 1 0 10 ite 0.5 150x150x2 fin 1 20 In 20 s s DC ith 40 m Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Typ 60 0m s 80 10 s 0µ 100 10 30 5 1m M aximu m Power Dissipa tion P C (W) 120 Cut -off Fre quen cy f T ( MH Z ) DC Curr ent Gain h FE 0 100 Base-Emittor Voltage V B E (V) (V C E =4V) 0.03 1 Base Current I B (mA) h FE – I C Characteristics (Typical) 30 2 (Cas 2A 1 I C =4 A 3A –30˚C (C 1 2 125˚C 0. 4m A 2 3 Collector Current I C (A) 0. 5m A (V CE =4V) 4 θ j- a ( ˚ C/W) Collector Current I C (A) 0 .6 m A 3 I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A IB 0 .8 m Weight : Approx 2.0g a. Type No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) A =2 0m A m 1.0 2.4±0.2 2.2±0.2 VCC (V) 4 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b 25˚C (C –55 to +150 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 120 ±0.2 Unit VCBO Tstg External Dimensions FM20(TO220F) (Ta=25°C) 2SD2014 8.4±0.2 ■Electrical Characteristics 2SD2014 Symbol (3kΩ) (200Ω) E Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 50x50x2 Without Heatsink 2 0 –0.02 0.05 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) –4 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 139