Power Transistor FP812 ICBO IEBO VCEO hFE VCE (sat) (Ta=25ºC) Unit µA µA V Ratings 10max 10max –120min 70min –0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –30 4.2 2.8 3.3 C0.5 16.9 Test Conditions VCB = –120V VEB = –6V IC = –50mA VCE = –4V, IC = –3A IC = –3A, IB = –0.3A 2.6 IB2 (mA) 30 t on (µs) 2.5 t stg (µs) 0.4 tf (µs) 0.6 1.35 1.35 0.85 2.54 (13.5) Symbol 4 Electrical Characteristics Unit V V V A A W ºC ºC 8.4 Ratings –120 –120 –6 –8 (pulse –12) –3 35 (Tc=25ºC) 150 –55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25ºC) 0.45 2.54 2.2 a) Type No. b) Lot No. B C E (Unit: mm) ■ IC — VCE Characteristics (typ.) –8 –3 00 mA A 0m 0 –2 –1 50 m –2 –100mA A ■ IC — VBE Temperature Characteristics (typ.) ■ VCE (sat) — I B Characteristics (typ.) –75mA –6 IC (A) –4 –25mA –2 Ic = –5A IC (A) VCE (sat) (A) –6 –50mA 0 –1 Ic = –1A IB = –10mA 0 –1 –2 –3 0 –5 –4 –10 –50 –100 0 –500 –1000 –2000 0 –0.5 ■ j-a — t (VCE = –4V) 500 (ºC/W) 75ºC 25ºC 100 j-a hFE 100 –55ºC 50 30 –0.01 30 –0.01 –5 –8 Characteristics 10 5 –0.05 –0.1 –0.5 –1 –5 –8 –12 –10 0.1 0.05 0.0002 0.001 0.01 10 100 ■ PC — Ta Derating 30 c c se c se 0m 10 (T natural air cooling Silicone grease Aluminum heatsink Unit: mm m C =2 20 ite 10 nk 0• si 20 –0.5 at he PC (W) fin C) in 5º –1 ith W IC (A) 1 c se 1m 10 D. 20 10 0.1 40 –5 Typ Tc = 25ºC t (sec) ■ Safe Operating Area (single pulse) (VCE = 12V) 30 ) ºC 25 1 0.5 IC (A) IC (A) ■ f T — IE Characteristics (typ.) Fin NO = (Ta Single Pulese 50 –0.5 –1 –1.5 50 Tc = 125ºC Typ –1.0 VBE (V) ■ hFE — IC Temperature Characteristics (typ.) (VCE = –4V) 500 hFE Tc = –40ºC 25ºC 75ºC 125ºC IB (mA) ■ hFE — IC Characteristics (typ.) –0.05 –0.1 –4 –2 VCE (V) fT (MHz) (VBE = –4V) –8 Ic = –3A 20 100 •1 0• 00 • natural air cooling Without heatsink 2 2 Without heatsink 0 0.01 0.05 0.1 0.5 IE (A) 1 5 10 –0.1 –3 –5 –10 –50 VCE (V) –100 –150 0 0 50 100 150 Ta (ºC) 61