Surface-mount Power Transistor Array SDA03 External Dimensions SMD-16A V VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 9 a b Pin 1 tf (µs) 0.22 8 20.0max 19.56±0.2 1.4±0.2 IC (A) 1 +0.15 0.3 –0.05 4.0max RL (Ω) 12 2.54±0.25 +0.15 0.75 –0.05 16 Typical Switching Characteristics VCC (V) 12 0.89±0.15 0.25 6.8max ICBO IEBO VCEO hFE VCE (sat) (Ta=25ºC) Unit µA µA V Ratings –10max –10max –60min 100min –0.4max 6.3±0.2 8.0±0.5 Test Conditions VCB = –60V VEB = –6V IC = –25mA VCE = –4V, IC = –2A IC = –2A, IB = –0.1A 3.6±0.2 Symbol 1.0±0.3 Electrical Characteristics Unit V V V A A W ºC ºC 0 to 0.15 Ratings –60 –60 –6 –6 (pulse –12) –1 3 (No Fin) 150 –55 to +150 9.8±0.3 Symbol VCBO VCEO VEBO IC IB PT Tj Tstg 3.0±0.2 Absolute Maximum Ratings (Ta=25ºC) a) Type No. b) Lot No. (Unit: mm) ■ IC — VCE Characteristics 6 ■ VCE (sat) — IC Temperature Characteristics (typ.) –100mA –200mA 5 VCE (sat) (V) –20mA 3 –10mA 2 Ta = 150ºC 75ºC 25ºC –55ºC 2 4 IC (A) –30mA 4 (VCE = –4V) 6 IC / IB = 20 –50mA 5 IC (A) ■ IC — VBE Temperature Characteristics (typ.) 3 Ta = 150ºC 75ºC 25ºC –55ºC 3 1 2 IB = –5mA 1 1 0 0 1 2 3 4 0 –0.05 5 –0.1 –1 ■ hFE — IC Temperature Characteristics ■ hFE Ta = 150ºC 75ºC 25ºC –55ºC 30 –0.01 –0.1 –1 –10 VCC = 12V IB1 = –IB2 = 50mA 0.5 tf j-a — t Ta = 25ºC Single pulse Characteristics 10 5 1 tstg 0.1 0.05 0.5 0.1 IC (A) 0.5 1 5 10 0.3 0.001 0.01 0.1 ■ PT — Ta Derating –20 1 t (s) IC (A) ■ Safe Operating Area (single pulse) 1.5 ton 1 j-a (ºC/W) ton• tstg• tf (µsec) VCE = –4V 500 1.0 50 5 50 0.5 VBE (V) ■ ton • tstg • t f — IC Characteristics 1000 100 0 IC (A) VCE (V) Equivalent Circuit Diagram 4 s 1m –10 3 10 m s 20 Without heatsink PT (W) m IC (A) 0 –10 s –1 16 2 15 14 13 12 11 10 9 –0.5 1 natural air cooling Without heatsink –0.1 –3 –5 –10 –50 VCE (V) 68 –100 0 2 0 50 100 Ta (ºC) 150 4 6 8 2