TO-220F 8A Thyristor TF821S, TF841S, TF861S ■ Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min ●UL approved type available 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=8A 4.2± 2.8 10.0±0.2 0.2 C 0.5 8.4±0.2 4.0±0.2 (Unit: mm) ●Repetitive peak off-state voltage: VDRM=200, 400, 600V a b 1.35±0.15 1.35± +0.2 0.85 – 0.1 0.15 2.54 2.54 2.2±0.2 2.4±0.2 +0.2 0.45 – 0.1 (1). Cathode (K) (2). Anode (A) (3). Gate (G) a. Part Number b. Lot Number Weight: Approx. 2.1g (1) (2) (3) ■Absolute Maximum Ratings Parameter Symbol Repetitive peak off-state voltage Repetitive peak reverse voltage Ratings Unit TF821S TF841S TF861S VDRM 200 400 600 V VRRM 200 400 600 V Non-repetitive peak off-state voltage VDSM 300 500 700 V Non-repetitive peak reverse voltage VRSM 300 500 700 V Average on-state current IT(AV) 8.0 A IT(RMS) 12.6 A Surge on-state current ITSM 120 A Peak forward gate current IFGM 2.0 A Peak forward gate voltage VFGM 10 V Peak reverse gate voltage VRGM 5.0 Peak gate power loss PGM 5.0 PG(AV) 0.5 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Isolation voltage VISO 1500 V RMS on-state current Average gate power loss Conditions Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Continuous current, Tc=87°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f 50Hz, duty V f 50Hz W f 50Hz, duty 10% 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min. ■Electrical Characteristics Parameter Symbol Ratings min typ max Unit Off-state current IDRM 2.0 mA Reverse current IRRM 2.0 mA On-state voltage VTM 1.4 V Gate trigger voltage VGT 1.5 V Gate trigger current IGT 15 mA Gate non-trigger voltage VGD Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance 16 5.0 V 0.1 IH 4.0 mA dv/dt 50 V/µS tq 30 Rth µS 3.6 °C/W Conditions Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=15A VD=6V, RL=10Ω, TC=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ RGK=1kΩ, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF Tc=25°C Junction to case TF821S, TF841S, TF861S ITSM Ratings Tj =125°C 10 Tj = 25°C 5 1.0 2.0 On-state voltage 3.0 60 40 G M Tj = –40°C Tj = –20°C Tj =25°C 20 30 =5 W 4 See graph at the upper right 0 100 0 1 2 Gate current 180° θ 3 iGF (A) 0° DC 180° 50 90° 120° 75 25 0 5 10 0 15 ( trigger current igt (Gate ) at Ta and tw 25°C 75°C 125°C 1 10 100 IH temperature Characteristics (Typical) 1000 tw 10 Tj =– 40°C 5 –20°C 25°C 1 75°C 0.5 0.2 0.5 1 10 100 t w (µs) (Typical) (VD=6V, RL=10Ω) 0.4 0.2 0 –40 0 25 50 75 100 Junction temperature Tj (°C) 125 50 75 100 125 10 rth (°C/W) 10 5 3 1 – 40 25 Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance Gate trigger current IGT (mA) 30 0.6 0 Junction temperature Tj (°C) IGT temperature Characteristics 50 3 –40 1000 (Typical) 0.8 10 5 VGT temperature Characteristics 1.0 50 125°C Pulse width (VD=6V, RL=10Ω) (VD=30V, RGK=1kΩ) 100 igt ) gate trigger IGT DC current at 25°C ) tw 0.5 0.5 15 30 Tj =– 40°C –20°C 1.0 10 Pulse trigger temperature Characteristics igt (Typical) vgt 1.5 5 Average on-state current IT(AV) (A) Holding current IH (mA) 0 Pulse width tw (µs) Gate trigger voltage VGT (V) 10 Gate trigger current IGT (mA) 100 60° Case temperature TC (°C) DC 0° 0° 18 12 30 ° 60 ° 90 ° 4 2.0 ( 50 125 Pulse trigger temperature Characteristics vgt (Typical) gate trigger VGT DC voltage at 25°C 10 0 50Hz Half-cycle sinewave θ : Conduction angle Average on-state current IT(AV) (A) trigger voltage vgt ( Gate ) at Ta and tw 5 0 P 6 2 1 1 IT(AV) – Tc Ratings 8 0 50Hz 8 2 150 0° 12 80 10 Number of cycle θ= Average on-state power PT(AV) (W) 180° θ 1 cycle 100 20 50Hz Half-cycle sinewave θ : Conduction angle 16 10 ms vT ( V ) IT(AV) – PT(AV) Characteristics 20 12 I TSM 120 θ=30° 0.8 14 Initial junction temperature Tj=125°C vGF (V) Surge on-state current ITSM (A) On-state current iT (A) 50 1 Gate Characteristics 140 Gate voltage 100 Gate trigger voltage VGT (V) vT – iT Characteristics (max) 0 25 50 75 100 Junction temperature Tj (°C) 125 1 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 17