MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-HK • • • • • IC Collector current ........................ 200A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 B1X C2E1 48±0.25 C1 B1 E1 E2 39 17.5 1.3 23 30 23 6 18.8 80±0.25 9.5 3–M5 (12) (12) (12) 20.5 Tab#110, t=0.5 28 29+1.5 –0.5 8 LABEL 20.5 9±0.1 61 4–φ5.5 C1 E1 (C2E1) (E2) C1 B1X E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open IC Collector current DC –IC Collector reverse current DC (forward diode current) 200 A PC Collector dissipation TC=25°C 1250 W IB Base current DC 12 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 2000 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 — Mounting torque Mounting screw M5 — Typical value Weight ELECTRICAL CHARACTERISTICS Symbol 7 V 200 A 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.47~1.96 N·m 15~20 kg·cm 420 g (Tj=25°C, unless otherwise noted) Limits Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 4.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 4.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=200A (diode forward voltage) — — 1.75 V hFE DC current gain IC=200A, VCE=2V/5V 75/100 — — — — — 2.0 µs Switching time VCC=300V, IC=200A, IB1=–IB2=4A — — 12 µs — — 3.0 µs Transistor part — — 0.1 °C/ W Diode part — — 0.39 °C/ W Conductive grease applied — — 0.05 °C/ W IC=200A, IB=2.6A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 400 IB=4.0A DC CURRENT GAIN hFE 320 IB=2.0A 240 IB=1.0A IB=0.5A 160 IB=0.2A 80 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 10 –1 1.0 1.4 1.8 2.2 BASE-EMITTER VOLTAGE 2.6 3.0 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 IB=2.6A 5 Tj=25°C Tj=125°C 3 2 10 1 7 5 3 2 7 5 3 2 10 –1 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 IC=300A 2 1 IC=200A IC=100A 0 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 BASE CURRENT IB (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 3 VCE(sat) COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 VBE(sat) 10 0 VBE (V) Tj=25°C Tj=125°C VCE=2.0V 10 2 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.0V Tj=25°C Tj=25°C Tj=125°C 10 3 7 5 3 2 VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 4 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 2 7 VCC=300V 5 IB1=–IB2=4A Tj=25°C 3 2 Tj=125°C 10 1 7 5 3 2 ts ton 10 0 7 tf 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 400 10 1 VCC=300V IC=200A 7 IB1=4A 5 4 3 tf 2 10 0 7 5 4 3 2 10–1 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 2 ts Tj=25°C Tj=125°C 2 3 4 5 7 10 0 IB2=–3A 300 IB2=–8A 200 100 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT –IB2 (A) S 70 60 50 COLLECTOR DISSIPATION 40 30 20 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) 80 10 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) S C 10 1 7 5 3 TC=25°C 2 NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SECOND BREAKDOWN AREA 90 DERATING FACTOR (%) S S 0µ 0µ 10 50 1m m D COLLECTOR CURRENT IC (A) 100 µS COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) VCE (V) DERATING FACTOR OF F. B. S. O. A. 50 10 10 2 7 5 3 2 100 200 300 400 500 600 700 800 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 Tj=125°C 0 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25°C Tj=125°C 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 VCC=300V 5 IB1=–IB2=4A Tj=25°C 3 Tj=125°C 2 10 2 10 2 7 5 3 2 10 1 trr (µs) 2000 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Irr Qrr 10 1 10 0 7 5 trr 3 2 10 0 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40 Zth (j–c) (°C/ W) 0.32 0.24 0.16 0.08 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999