SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • CECC SCREENING OPTIONS A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N918 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 30V VCEO Collector – Emitter Voltage 15V VEBO Emitter – Base Voltage 3V IC Collector Current PD Total Device Dissipation 50mA @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C TSTG , TJ Semelab plc. Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 200mW 1.14mW / °C 300mW 1.71mW / °C –65 to +200°C Prelim. 7/95 SEME 2N918CSM LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus) Collector – Emitter Sustaining Voltage IC = 3mA IB = 0 15 V(BR)CBO Collector – Base Breakdown Voltage IC = 1µA IE = 0 30 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10µA IC = 0 3 ICBO Collector – Base Cut-off Current VCB = 25V IE = 0 VCE(sat) Collector – Emitter Saturation Voltage IC = 10mA IB = 1mA 0.4 VBE(sat) Base – Emitter Saturation Voltage IC = 10mA IB = 1mA 1.0 IC = 500µA VCE = 10V 10 IC = 3mA VCE = 1V 20 IC = 10mA VCE = 10V 20 IC = 4mA VCE = 10V hFE DC Current Gain fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance NF Noise Figure f = 100MHz 0.010 200 600 VCB = 10V 1.7 f = 140kHz VCB = 0 3.0 VEB = 0.5V IC = 0 2.0 f = 140kHz IC = 1mA VCE = 6V RG = 400Ω f = 60MHz IC = 6mA VCB = 12V Amplifier Power Gain PO Power Output IC = 8mA η Collector Efficiency f = 500MHz f = 200MHz VCB = 15V Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. µA V — MHz IE = 0 Gpe Semelab plc. V pF pF 6.0 dB 15 30 mW 25 % Prelim. 7/95