SEME-LAB IRFY1310M-T257

IRFY1310M-T257
MECHANICAL DATA
Dimensions in mm (inches)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
16.38 (0.645)
16.89 (0.665)
10.41 (0.410)
10.67 (0.420)
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDS
ID(max)
RDS(on)
12.07 (0.500)
19.05 (0.750)
1 2 3
100V
14A
.055W
FEATURES
0.64 (0.025)
Dia.
0.89 (0.035)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
• HERMETICALLY SEALED TO257 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
TO257AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
34A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
21A
IDM
Pulsed Drain Current 1
136A
PD
Power Dissipation @ Tcase = 25°C
100W
±20V
Linear Derating Factor
TJ , Tstg
Operating and Storage Temperature Range
TL
Package Mounting Surface Temperature (for 5 sec)
RqJC
Thermal Resistance Junction to Case
0.8W/°C
–55 to 150°C
300°C
1.25°C/W max.
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/99
IRFY1310M-T257
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
STATIC
ELECTRICAL RATINGS
Parameter
Drain – Source Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
VGS = 0
ID = 250mA
100
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = 250mA
2.0
IGSS
Gate-Body Leakage Forward
VGS £ 20V
100
IGSS
Gate-Body Leakage Reverse
VGS = -20V
-100
BVDSS
VDS = Max Rate,VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 0.8 Max Rate, VGS = 0V
TC = 125°C
VDS(on)
Static Drain – Source On–State
4.0
0.2
1.0
1.10
1.30
V
0.55
W
VGS = 10V
ID = 22A
DYNAMIC CHARACTERISTICS
Gfs
Forward Transductance 1
VDS = 25V
ID = 22A
Ciss
Input Capacitance
VGS = 0V
1900
Coss
Output Capacitance
VDS = 25V
450
Crss
Reverse Transfer Capacitance
F = 1MHz
230
td(on)
Turn–On Delay Time
tr
Rise Time
VDD = 50V
ID = 22A
56
td(off)
Turn–Off Delay Time
RG = 3.6W
RD = 2.9W
45
tf
Fall Time
Resistance1
IS
14
mA
S
pF
11
ns
40
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Modified MOSPOWER
(Body Diode)
nA
0.25
ID = 22A
RDS(on) Static Drain – Source On–State
V
0.1
VGS = 10V
Voltage1
Unit
,
34
smbol showing
the integral P-N
A
/
112
ISM
Source Current1 (Body Diode)
VSD
Diode Forward Voltage
IS = 22A ,VGS = 0V, TC = 25°C
trr
Reverse Recovery Time
TJ = 25°C
Qrr
Reverse Recovery Charge
di / dt = 100A/ms
Junction rectifier
5
IF =22A
1.3
V
180
270
ns
1.2
1.8
m
c
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/99