IRFY1310M-T257 MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDS ID(max) RDS(on) 12.07 (0.500) 19.05 (0.750) 1 2 3 100V 14A .055W FEATURES 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC • HERMETICALLY SEALED TO257 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE TO257AA – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 34A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 21A IDM Pulsed Drain Current 1 136A PD Power Dissipation @ Tcase = 25°C 100W ±20V Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC Thermal Resistance Junction to Case 0.8W/°C –55 to 150°C 300°C 1.25°C/W max. Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/99 IRFY1310M-T257 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) STATIC ELECTRICAL RATINGS Parameter Drain – Source Breakdown Voltage Test Conditions Min. Typ. Max. VGS = 0 ID = 250mA 100 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250mA 2.0 IGSS Gate-Body Leakage Forward VGS £ 20V 100 IGSS Gate-Body Leakage Reverse VGS = -20V -100 BVDSS VDS = Max Rate,VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 0.8 Max Rate, VGS = 0V TC = 125°C VDS(on) Static Drain – Source On–State 4.0 0.2 1.0 1.10 1.30 V 0.55 W VGS = 10V ID = 22A DYNAMIC CHARACTERISTICS Gfs Forward Transductance 1 VDS = 25V ID = 22A Ciss Input Capacitance VGS = 0V 1900 Coss Output Capacitance VDS = 25V 450 Crss Reverse Transfer Capacitance F = 1MHz 230 td(on) Turn–On Delay Time tr Rise Time VDD = 50V ID = 22A 56 td(off) Turn–Off Delay Time RG = 3.6W RD = 2.9W 45 tf Fall Time Resistance1 IS 14 mA S pF 11 ns 40 SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Modified MOSPOWER (Body Diode) nA 0.25 ID = 22A RDS(on) Static Drain – Source On–State V 0.1 VGS = 10V Voltage1 Unit , 34 smbol showing the integral P-N A / 112 ISM Source Current1 (Body Diode) VSD Diode Forward Voltage IS = 22A ,VGS = 0V, TC = 25°C trr Reverse Recovery Time TJ = 25°C Qrr Reverse Recovery Charge di / dt = 100A/ms Junction rectifier 5 IF =22A 1.3 V 180 270 ns 1.2 1.8 m c Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/99