IRF430 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 12.19 (0.48) 11.18 (0.44) 30.40 (1.197) 29.90 (1.177) VDSS ID(cont) RDS(on) 500V 4.5A 1.5W 4.09 (0.161) 3.84 (0.151) 2 Pls 2 11.18 (0.440) 10.67 (0.420) 1 FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664) TO–3 Metal Package Pin 1 – Gate Pin 2 – Source • SIMPLE DRIVE REQUIREMENTS Case – Drain • SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS = 0 , Tcase = 100°C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63”) from case for 10 sec. ±20V 4.5A 3A 18A 75W 0.6W/°C 1.1mJ 4.5A 3.5V/ns -55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 50V , L ³ 100mH , RG = 25W , Peak IL = 4.5A , Starting TJ = 25°C 3) @ ISD £ 4.5A , di/dt £ 75A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/00 IRF430 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 3A VGS = 10V ID = 4.5A VDS = VGS ID = 250mA VDS ³ 15V IDS = 3A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 4.5A VDS = 0.5BVDSS trr Qrr ton LD LS PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) RqJC RqCS RqJA THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Case – Sink Thermal Resistance Junction – Ambient VSD Typ. Max. Unit V 500 V / °C 0.78 1.5 1.8 4 2 2.7 25 250 100 –100 610 135 65 16 2 8 W V S (É) mA nA pF 40 6 20 30 40 80 30 VDD = 250V ID = 4.5A RG = 7.5W SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 4.5A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 4.5A TJ = 25°C 1 Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V Forward Turn–On Time IS ISM Min. nC ns 4.5 18 A 1.4 V 900 7 ns mC Negligible 5.0 13 nH 1.67 °C/W 0.12 30 Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/00