IRF450 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 2 1 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 17.15 (0.675) 16.64 (0.655) 7.87 (0.310) 6.99 (0.275) 12.07 (0.475) 11.30 (0.445) 1.78 (0.070) 1.52 (0.060) 500V 13A 0.4W FEATURES 20.32 (0.800) 18.80 (0.740) dia. 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. VDSS ID(cont) RDS(on) • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS = 0 , Tcase = 100°C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63”) from case for 10 sec. ±20V 12A 7.75A 48A 150W 1.2W/°C 8.0mJ 12A 3.5V/ns -55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 480mH , RG = 25W , Peak IL = 28A , Starting TJ = 25°C 3) @ ISD £ 28A , di/dt £ 170A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 9.1W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 10/99 IRF450 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time IS ISM VSD trr Qrr ton LD LS RqJC RqCS RqJA Test Conditions VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 7.75A VGS = 10V ID = 12A VDS = VGS ID = 250mA VDS ³ 15V IDS = 7.75A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 12A VDS = 0.5BVDSS Min. Typ. PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Case – Sink Thermal Resistance Junction – Ambient Unit V 500 V / °C 0.78 0.4 0.5 4 2 5.5 25 250 100 –100 2700 600 240 55 5 27 W V S (É) mA nA pF 120 19 70 35 190 170 130 VDD = 250V ID = 12A RG = 2.35W SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 12A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 12A TJ = 25°C Reverse Recovery Charge 1 di / dt £ 100A/ms VDD £ 50V Forward Turn–On Time Max. nC ns 12 48 A 1.7 V 1600 14 mC ns Negligible 5.0 13 nH 1.0 °C/W 0.12 30 Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 10/99