SDT96305 MECHANICAL DATA Dimensions in mm NPN SILICON POWER TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 FEATURES 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) • Low saturation voltages. • High current gain at 40A. (20 Typ.) • Hermetic metal package. 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • High power switching circuits. • Switching regulators. • Motor drive controls. TO3 (TO-204AA) Pin 1 – Base Pin 2 – Emitter APPLICATIONS Case is Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 275V VCEO Collector – Emitter Voltage (IB = 0) 250V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 50A IC(PK) Peak Collector Current 70A IC Continuous Base Current 10A IB(PK) Peak Base Current 15A Ptot Total Dissipation at Tcase = 25°C Tstg Operating and Storage Temperature Range RθJC Thermal Resistance Junction to Case 175W –65 to +200°C 1.0°CW Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document 5746 Issue 1 SDT96305 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. ELECTRICAL CHARACTERISTICS VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 200mA IB = 0 250 V(BR)CBO Collector – Base Breakdown Voltage IC = 100µA IE = 0 275 V(BR)EBO Emitter – Base Breakdown Voltage IE = 100µA IC = 0 10 ICBO Collector – Base Cut–Off Current VCB = 200V IE = 0 10 TC = 150°C 250 hFE* DC Current Gain VCE(sat)* Collector – Emitter Saturation Voltage IC = 40A IB = 8A 1.5 VBE(sat)* Base – Emitter Saturation Voltage IC = 40A IB = 8A 2.0 IC = 1.0A VCE = 10V IC = 40A VCE = 10V 8 IC = 50A VCE = 10V 5 Unit V 40 µA — V DYNAMIC CHARACTERISTICS ft Transition Frequency Cob Output Capacitance ton Turn On Time VCC = 100V ts Storage Time tf Fall Time IB1 = IB2 = 2.0A tp = 10µs f = 1MHz IE = 0 VBC = 10V f = 1MHz IC = 20A 10 MHz 600 pF 1.0 2.5 µs 0.6 * Pulse test tp = 300µs , δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document 5746 Issue 1