SML20W65 TO–267 Package Outline. Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 200V 65A ID(cont) Ω RDS(on) 0.026Ω • Faster Switching • Lower Leakage • TO–267 Hermetic Package D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 200 V ID Continuous Drain Current 3 65 A IDM Pulsed Drain Current 1 3 260 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 400 W Derate Linearly 3.2 W/°C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current 1 3 (Repetitive and Non-Repetitive) 65 EAR Repetitive Avalanche Energy 1 50 EAS Single Pulse Avalanche Energy 2 –55 to 150 2500 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 1.18mH, RG = 25Ω, Peak IL = 65A 3) Maximum current limited by package. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99 SML20W65 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 65 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 2.5mA 4 V ID(ON) On State Drain Current 2 4 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 200 Typ. 2 Max. Unit V 65 µA A VGS = 10V , ID = 0.5 ID [Cont.] 0.026 Ω DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Min. Typ. Max. Unit 8500 10200 Coss Output Capacitance VDS = 25V 1950 2730 Crss Reverse Transfer Capacitance f = 1MHz 560 840 Qg Total Gate Charge3 VGS = 10V 290 435 Qgs Gate – Source Charge VDD = 0.5 VDSS 66 100 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 120 180 td(on) Turn–on Delay Time VGS = 15V 16 32 tr Rise Time VDD = 0.5 VDSS 25 50 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 48 72 tf Fall Time RG = 0.6Ω 5 10 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic IS Test Conditions Continuous Source Current4 (Body Diode) Min. Typ. Max. Unit 65 A 260 ISM Pulsed Source Current1 4 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs 330 ns Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/µs 5.8 µC 1.7 V THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.31 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 4) Maximum current limited by package. CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99