SEME BFC62 LAB 4TH GENERATION MOSFET TO220–AC Package Outline. Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4.83 (0.190) 3.56 (0.140) 5.33 (0.210) 4.83 (0.190) 2 1.40 (0.020) 0.51 (0.055) 16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. VDSS ID(cont) RDS(on) 14.73 (0.580) 12.70 (0.500) 6.35 (0.250) 4.60 (0.181) 1 2 3 1.78 (0.070) 0.99 (0.390) 1.02 (0.040) 0.38 (0.015) 2.54 (0.100) N o m. 800V 4.7A Ω 2.40Ω 0.66 (0.026) 0.41 (0.016) 2.92 (0.115) 2.03 (0.080) 5.08 (0.200) N o m. Terminal 1 Gate Terminal 2 Drain Terminal 3 Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 800 V ID Continuous Drain Current 4.7 A IDM Pulsed Drain Current 1 18.8 A VGS Gate – Source Voltage ±30 V PD Total Power Dissipation @ Tcase = 25°C 125 W TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions VGS = 0V , ID = 250µA Min. 800 Typ. Max. Unit BVDSS Drain – Source Breakdown Voltage ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 VGS =10V , ID = 0.5 ID [Cont.] 2.40 Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V V 4.7 2 A Ω µA 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/93 SEME BFC62 LAB DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 790 Max. Unit 950 VDS = 25V 116 163 Reverse Transfer Capacitance f = 1MHz 44 66 Qg Total Gate Charge3 VGS = 10V 38 55 Qgs Gate – Source Charge VDD = 0.5 VDSS 4.5 7 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] 16 24 td(on) Turn–on Delay Time VGS = 15V 10 20 tr Rise Time VDD = 0.5 VDSS 9 18 td(off) Turn-off Delay Time ID = ID [Cont.] 31 47 tf Fall Time RG = 1.8Ω 15 30 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current (Body Diode) Test Conditions ISM Pulsed Source Current1(Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] dls / dt = 100A/µs Qrr Reverse Recovery Charge Min. Typ. Max. Unit 4.7 A 18.8 1.3 V 160 320 640 ns 1.5 3.0 6.0 µC Min. Typ. SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area SOA2 Safe Operating Area ILM Inductive Current Clamped Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Max. Unit 125 W 125 W 18.8 A THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 1.0 °C/W 80 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/93