SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN SEME LAB 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W TO3 Package Outline. Dimensions in mm (Inches) POWER MOS IV™ N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter 901R1AN Drain – Source Voltage VDSS SML 1001R1AN 901R3AN 900 1000 1001R3AN Unit 1000 V 900 Continuous Drain Current 9.5 8.5 A IDM Pulsed Drain Current 1 38 34 A VGS Gate – Source Voltage ID ±30 V 230 W –55 to 150 °C Total Power Dissipation @ Tcase = 25°C PD Derate above 25°C Operating and Storage Junction Temperature TJ , TSTJ Range STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated) BVDSS Characteristic / Test Conditions / Part Number Drain – Source Breakdown Voltage SML1001R1AN / SML1001R3AN Min. 1000 (VGS = 0V , ID = 250mA) 900 IDSS Zero Gate Voltage Drain Current IGSS Gate – Source Leakage Current ID(ON) SML901R1AN / SML901R3AN Max. Unit V (VGS = 0V , VDS = VDSS) 250 (VGS = 0V , VDS = 0.8VDSS , TC = 125°C) 1000 (VGS = ±30V , VDS = 0V) ±100 On State Drain Current 2 SML1001R1AN / SML901R1AN 9.5 (VDS > ID(ON) x RDS(ON) Max , VGS = 10V) SML1001R1AN / SML901R3AN 8.5 VGS(TH) Gate Threshold Voltage RDS(ON) Typ. Static Drain – Source On State Resistance 2 (VGS =10V , ID = 0.5 ID [Cont.]) 2 mA nA A 4 V SML1001R1AN / SML901R1AN 1.1 SML1001R3AN / SML901R3AN 1.3 W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 12/00 SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W SEME LAB DYNAMIC CHARACTERISTICS Ciss Characteristic Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test Conditions. VGS = 0V Min. Typ. 2460 Max. Unit 2950 VDS = 25V 360 500 f = 1MHz 105 160 VGS = 10V 90 130 ID = ID [Cont.] 9.3 14 Qg Total Gate Charge3 Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge VDD = 0.5 VDSS 47 70 td(on) Turn–on Delay Time VDD = 0.5 VDSS 15 30 ID = ID [Cont.] 16 32 VGS = 15V 64 95 24 48 tr td(off) tf Rise Time Turn-off Delay Time RG = 1.8W Fall Time pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions. IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Part Number SML1001R1AN / SML901R1AN Min. Typ. SML901R3AN / SML901R3AN Max. Unit 9.5 A 8.5 SML1001R1AN / SML901R1AN 38 SML1001R3AN / SML901R3AN 34 Diode Forward Voltage2 (VGS = 0V , IS = – ID [Cont.]) Reverse Recovery Time A 1.3 V (IS = – ID [Cont.] , dls / dt = 100A/ms 320 636 1200 ns Reverse Recovery Charge 2.2 4.5 9 mC Typ. SAFE OPERATING AREA CHARACTERISTICS SOA1 Characteristic / Test Conditions / Part Number Safe Operating Area VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec Min. 230 SOA2 Safe Operating Area IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec 230 SML1001R1AN / SML901R1AN 38 SML1001R3AN / SML901R3AN 34 ILM Inductive Current Clamped Max. Unit W A THERMAL CHARACTERISTICS (Tcase =25°C unless otherwise stated) RqJC RqJA TL Characteristic / Test Conditions. Junction to Case Min. Typ. Max. Unit 0.53 °C/W Junction to Ambient 30 °C/W Max. Lead Temperature for Soldering Conditions: 0.065” from Case for 10 sec. 300 °C 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 12/00