SEME SML1004R2GXN LAB 4TH GENERATION MOSFET TO–257 Package Outline. Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) 1 2 3 12.07 (0.500) 19.05 (0.750) VDSS ID(cont) RDS(on) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC Pin 1 Gate Pin 2 Drain 1000V 3.0A 4.20W 3.05 (0.120) BSC Pin 3 Source Pinout same as TO–220 Package. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage ID 1000 V Continuous Drain Current 3.0 A IDM Pulsed Drain Current 1 12 A VGS Gate – Source Voltage ±30 V Total Power Dissipation @ Tcase = 25°C 100 W Linear Derating Factor 0.8 W / °C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions VGS = 0V , ID = 250mA Min. 1000 Typ. Max. Unit V BVDSS Drain – Source Breakdown Voltage ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 VGS =10V , ID = 0.5 ID [Cont.] 4.20 Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V 3.0 2 A W mA 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 5/94 SEME SML1004R2GXN LAB DYNAMIC CHARACTERISTICS Characteristic Test Conditions CDC Drain to Case Capacitance f = 1MHz Min. 8 12 Ciss Input Capacitance VGS = 0V 805 950 Coss Output Capacitance VDS = 25V 115 160 Crss Reverse Transfer Capacitance f = 1MHz 37 60 Qg Total Gate Charge3 VGS = 10V 35 55 Qgs Gate – Source Charge VDD = 0.5 VDSS 4.3 7 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 18 27 td(on) Turn–on Delay Time VGS = 15V 10 20 tr Rise Time VDD = 0.5 VDSS 12 24 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 33 50 tf Fall Time 16 32 RG = 1.8W Typ. Max. Unit pF pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Test Conditions Min. Typ. Max. Unit IS Continuous Source Current (Body Diode) 3.0 ISM Pulsed Source Current1(Body Diode) 12 VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] Qrr Reverse Recovery Charge dls / dt = 100A/ms A 1.3 V 150 290 580 ns 0.8 1.65 3.3 mC Typ. SAFE OPERATING AREA CHARACTERISTICS SOA1 Characteristic Safe Operating Area , t = 1 Sec Test Conditions VDS = 0.4VDSS , IDS = PD / 0.4VDSS Min. 100 SOA2 Safe Operating Area , t = 1 Sec VDS = PD / ID [Cont.] , IDS = ID [Cont.] 100 ILM Inductive Current Clamped Max. Unit W 12 A THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Min. Junction to Ambient Typ. Max. Unit 1.20 °C/W 80 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 5/94