SHARP GP1S25

GP1S25
GP1S25
Side Lead Type Ultra-compact
Photointerrupter
■ Features
■ Outline Dimensions
(Unit : mm)
2. Conforming to solder reflow
Pre-heat : 160 ˚C, MAX. 120 sec
Reflow : 200 ˚C, MAX. 60 sec
4
3
2
1
a-a section
(0.3) Slit width
0.6
4.0
3.0
■ Applications
1. CD-ROM drives
2. FDDs
3.4
1.0 1.6 1.25
Optical
center
S4
5.2
(0.85)
4. Gap : 1.6 mm
+ 0.2
0.1
(C0.3)
1
2
3
4
■ Absolute Maximum Ratings
Output
*1 Soldering time : For 3 seconds (hand soldering)
6
φ 0.8
0.4
❈ 0.87
Input
Gate position
(C0.3)
0.15 -
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
Anode
Collector
Emitter
Cathode
a
3. Slit : 0.3 mm
1
2
3
4
(1)
240 ˚C, MAX. 10 sec
)
Circuit diagram: Top View
2.5
(
Top View
a
1. Side lead ultra-compact transmission type
1 2 3 4
* Tolerance : ± 0.2 mm
* ( ) : Connector dimensions for reference
* The dimensions indicated by ❈ refer
to those measured from the lead base.
* Dimensions shown do not include burr.
Burr's dimension : 0.15 MAX.
Rest of gate : 0.3 MAX.
(Ta=25˚C)
Symbol
IF
VR
P
V CEO
V ECO
IC
PC
P tot
T opr
T stg
T sol
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
❈ 0.87
❈ 0.8
Unit
mA
V
mW
V
V
mA
mW
mW
˚C
˚C
˚C
GP1S25
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
(Ta=25 ˚C)
Parameter
Forward voltage
Reverse current
Dark current
Collector current
Collector-emitter saturation voltage
Rise time
Response time
Fall time
Symbol
VF
IR
I CEO
IC
V CE(sat)
tr
tf
MIN.
50
-
TYP.
1.2
35
35
MAX.
1.4
10
100
300
0.4
100
100
60
120
50
100
40
30
20
10
Total power dissipation
Input side power dissipation and
80 output side collector power dissipation
60
40
20
0
- 25
0
25
50
75 85
0
- 25
100
0
25
50
75 85
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Collector Current vs. Forward Current
500
Ta= 75˚C
50˚C
100
VCE =5V
Ta =25˚C
2.0
25˚C
0˚C
- 25˚C
Collector current I C (mA )
200
Forward current I F (mA)
Unit
V
µA
nA
µA
V
µs
µs
Fig. 2 Power dissipation vs. Ambient
Temperature
Power dissipation P (mW)
Forward current I
F
(mA)
Fig. 1 Forward Current vs. Ambient
Temperature
Conditions
I F = 20mA
V R = 3V
V CE = 20V
V CE = 5V, IF = 5mA
I F = 10mA, I C = 50 µ A
VCE = 5V, IC = 100 µ A
R L = 1 000 Ω
50
20
10
5
1.6
1.2
0.8
0.4
2
1
0
0.5
1
1.5
2
Forward voltage V F (V)
2.5
3
0
0
4
8
12
Forward current IF (mA )
16
20
GP1S25
Fig. 5 Collector Current vs. Collector-emitter
Voltage
Fig. 6 Relative Collector Current vs.
Ambient Temperature
120
3.0
IF=5mA
VCE=5V
110
Collector current I C (mA )
Collector current I C (mA )
100
2.4
IF=50mA
1.8
40mA
30mA
1.2
20mA
0.6
0
90
80
70
60
50
40
30
20
10mA
5mA
0
2
4
6
8
10
0
- 25
10
0
Collector-emitter voltage VCE (V )
75 85
Fig. 8 Dark Current vs. Ambient Temperature
0.20
10
VF =10mA
IC =40µ A
-6
VCE= 20V
5
2
10
0.14
0.12
0.10
0.08
-7
5
CEO
(A)
0.16
Dark current I
Collector-emitter saturation voltage VCE(sat) (V )
50
Ambient temperature Ta (˚C)
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.18
25
2
10
-8
5
2
10
-9
5
0.06
2
- 25
0
25
50
10
75 85
- 10
0
25
50
75
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Fig. 9 Response Time vs. Load Resistance
1000
VCE =5V
500 IC =100µ A
Test Circuit for Response Time
tr
Response time (µs)
tf
100
Input
VCC
50
Input
RD
RL
Output
td
ts
Output
10%
90%
10
td
5
ts
tr
0.1
1
5 10
50 100
Load resistance R L (kΩ )
1000
tf
GP1S25
Fig. 10 Detecting Position Characteristics (1)
L=0
L
80
70
60
50
40
30
20
80
L=0
70
60
50
40
30
20
10
10
0
0
IF =5mA
VCE =5V
90
Relative collector current (%)
Relative collector current (%)
100
IF =5mA
VCE =5V
90
L
100
Fig. 11 Detecting Position Characteristics (2)
0.5
1
1.5
2
2.5
Shield distance L (mm)
● Please refer to the chapter "Precautions for Use".
0
0
0.5
1
1.5
Shield distance L (mm)
2