SHARP LZ2426J

LZ2426J
LZ2426J
Dual-power-supply (5 V/12 V) Operation
1/4-type B/W CCD Area Sensor with 320 k Pixels
DESCRIPTION
PIN CONNECTIONS
The LZ2426J is a 1/4-type (4.5 mm) solid-state
image sensor that consists of PN photo-diodes and
CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 320 000 pixels
(542 horizontal x 582 vertical), the sensor provides a
stable high-resolution B/W normal or mirror image.
14-PIN HALF-PITCH WDIP
TOP VIEW
ØRS 1
FEATURES
• Number of effective pixels : 512 (H) x 582 (V)
• Number of optical black pixels
– Horizontal : 2 front and 28 rear
• Pixel pitch : 7.2 µm (H) x 4.7 µm (V)
• Low fixed-pattern noise and lag
• No burn-in and no image distortion
• Blooming suppression structure
• Built-in output amplifier
• Built-in pulse mix circuit
• Variable electronic shutter (1/50 to 1/10 000 s)
• Normal or mirror image output available from
common output pin
• Compatible with CCIR standard
• Package :
14-pin half-pitch WDIP [Plastic]
(WDIP014-P-0400A)
Row space : 10.16 mm
14 OFD
GND 2
13 ØTG
OS 3
12 ØV2
OD 4
11 ØV1
ØH2B 5
10 ØV4
ØH2 6
9 ØV3
ØH1B 7
8 ØH1
(WDIP014-P-0400A)
PRECAUTIONS
• The exit pupil position of lens should be more
than 20 mm from the top surface of the CCD.
• Refer to "PRECAUTIONS FOR CCD AREA
SENSORS" for details.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in
catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
LZ2426J
PIN DESCRIPTION
SYMBOL
OD
PIN NAME
Output transistor drain
OS
ØRS
Output signals
ØV1, ØV2, ØV3, ØV4
Vertical shift register clock
ØH1, ØH2, ØH1B, ØH2B
Horizontal shift register clock
NOTE
Reset transistor clock
ØTG
Transfer gate clock
OFD
GND
Overflow drain
Ground
1
NOTE :
1. ØV1-ØV4 : Input the clock through a 0.1 µF capacitor.
ABSOLUTE MAXIMUM RATINGS
(TA = +25 ˚C)
PARAMETER
Output transistor drain voltage
SYMBOL
VOD
RATING
0 to +15
UNIT
V
Overflow drain voltage
VOFD
0 to +30
V
Reset gate clock voltage
VØRS
–0.3 to +15
0 to +7.5
V
V
–0.3 to +7.5
–0.3 to +15
V
V
–40 to +85
–20 to +70
˚C
˚C
Vertical shift register clock voltage
VØV
Horizontal shift register clock voltage
VØH
Transfer gate clock voltage
VØTG
Storage temperature
TSTG
Ambient operating temperature
TOPR
2
LZ2426J
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Ambient operating temperature
SYMBOL
TOPR
MIN.
TYP.
25.0
MAX.
UNIT
˚C
Output transistor drain voltage
VOD
12.0
12.5
13.0
V
12.0
V
1
12.5
0.0
13.0
V
V
2
Overflow drain
When DC is applied
VOFD
2.7
voltage
Ground
When pulse is applied p-p level
VØOFD
GND
12.0
Transfer gate
clock
LOW level
HIGH level
VØTGL
–0.05
0.0
0.05
V
VØTGH
12.0
12.5
13.0
V
4.7
5.0
5.5
V
–0.05
0.0
0.05
V
4.7
5.0
5.5
V
VOD – 9.0
9.5
V
V
Vertical shift
register clock
Horizontal shift
register clock
Reset gate clock
VØV1, VØV2
p-p level
VØV3, VØV4
VØH1L, VØH2L
LOW level
VØH1BL, VØH2BL
VØH1H, VØH2H
HIGH level
VØH1BH, VØH2BH
LOW level
HIGH level
VØRSL
VØRSH
0.0
VOD – 4.5
fØV1, fØV2
fØV3, fØV4
Vertical shift register clock frequency
Horizontal shift register clock frequency
fØH1, fØH2
fØH1B, fØH2B
Reset gate clock frequency
tw1, tw2
kHz
9.66
MHz
9.66
fØRS
Horizontal shift register clock phase
15.63
8.0
13.0
NOTE
MHz
18.0
ns
3
NOTES :
1. When DC voltage is applied, shutter speed is 1/50-second.
2. When pulse is applied, shutter speed is less than 1/50-second.
3.
ØH1, ØH2
ØH1B, ØH2B : Normal image output mode
ØH1B, ØH2B : Mirror image output mode
tw1
tw2
* To apply power, first connect GND and then turn on VOD and then turn on other powers and pulses. Do not connect the
device to or disconnect it from the plug socket while power is being applied.
3
LZ2426J
CHARACTERISTICS (Drive method : Field accumulation)
(TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER
Standard output voltage
SYMBOL
VO
Photo response non-uniformity
Saturation output voltage
PRNU
VSAT
Dark output voltage
VDARK
Dark signal non-uniformity
Sensitivity
MIN.
TYP.
150
MAX.
15
450
UNIT
mV
NOTE
2
%
3
mV
4
0.5
mV
1, 5
DSNU
R
0.5
400
mV
mV
1, 6
7
Smear ratio
Image lag
SMR
AI
–84
dB
%
8
9
Blooming suppression ratio
ABL
Output transistor drain current
IOD
Output impedance
RO
1.0
1 000
10
4.0
400
8.0
mA
$
NOTES :
• VOFD should be adjusted to the minimum voltage such
that ABL satisfy the specification, or to the value
displayed on the device.
1. TA = +60 ˚C
2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. VSAT is the minimum
segment's voltage under 10 times exposure of the
standard exposure conditions.
5. The average output voltage under non-exposure
conditions.
6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.
7. The average output voltage when a 1 000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.
8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.
9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.
10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.
4
LZ2426J
PIXEL STRUCTURE
OPTICAL BLACK
(2 PIXELS)
OPTICAL BLACK
(28 PIXELS)
512 (H) x 582(V)
1 pin
TIMING CHART
VERTICAL TRANSFER TIMING <NORMAL OUTPUT>
(1st, 3rd FIELD)
623
625 1
6
20
22
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
580 582
+
581
1
+
2
3
+
4
5
+
6
7
+
8
1
2
+
3
4
+
5
6
+
7
OS
(2nd, 4th FIELD)
311
318
332
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
579 581
+
+
580 582
OS
5
LZ2426J
HORIZONTAL TRANSFER TIMING <NORMAL OUTPUT>
618, 1
HD
60
24
ØH1
84.5
ØH2
ØRS
OS
... 512
PRE SCAN (4)
OB (2)
OUTPUT (512) 1ππππππππππ
OB (28)
29
49
ØV1
59
39
ØV2
24
54
ØV3
34
64
ØV4
62
72
ØOFD
READOUT TIMING <NORMAL OUTPUT>
(1st, 3rd FIELD)
HD
1
60
618, 1
60
29 49
ØV1
39 59
ØV2
24
ØV3
54
34
ØV4
242
ØTG
25.07 µs (242 bits)
64
338
9.95 µs (96 bits)
64.00 µs (618 bits)
(2nd, 4th FIELD)
HD
1
618, 1
60
60
29 49
ØV1
39
59
ØV2
24
54
ØV3
34
64
ØV4
242
338
ØTG
25.07 µs (242 bits)
9.95 µs (96 bits)
64.00 µs (618 bits)
6
LZ2426J
VERTICAL TRANSFER TIMING <MIRROR OUTPUT>
(1st, 3rd FIELD)
623
625 1
6
20
22
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
578 580 582
+
+
579 581
1
+
2
3
+
4
5
+
6
1
2
+
3
4
+
5
OS
(2nd, 4th FIELD)
311
318
332
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
577 579 581
+
+
+
578 580 582
OS
HORIZONTAL TRANSFER TIMING <MIRROR OUTPUT>
618, 1
60
HD
4
ØH1
58.5
ØH2
ØRS
OS
PRE SCAN (4)
OB (2)
ππππ1
9
29
ØV1
19
39
ØV2
4
34
ØV3
14
44
ØV4
42
ØOFD
7
52
OB (28)
OUTPUT (512) 512ππππππππππ
LZ2426J
READOUT TIMING <MIRROR OUTPUT>
(1st, 3rd FIELD)
HD
1
60
618, 1
60
9 29
ØV1
19 39
ØV2
ØV3
4
34
24 44
ØV4
222
ØTG
23.00 µs (222 bits)
318
9.95 µs (96 bits)
64.00 µs (618 bits)
(2nd, 4th FIELD)
HD
1
60
618, 1
60
9 29
ØV1
19
39
ØV2
4
34
ØV3
14
44
ØV4
222
318
ØTG
23.00 µs (222 bits)
9.95 µs (96 bits)
64.00 µs (618 bits)
8
• Example of drive circuit with LR38580 driver IC.
9
ØRS
ØRS
GND
VOD
3
OS
1 k$
4
OD
ØH1
ØH1B
ØH2
ØH2B
ØV4
ØV3
ØV2
ØV1
(*1) ØV1-ØV4 : Input the clock through a
0.1 µF capacitor.
2SC4627
7
6
5
ØH2B
2
8
ØH2
1
LZ2426J
(*1)
9
ØH1B
CCD
OUT
0.1 µF
OFD
OFD
10 $
ØTG
22 k$
ØV2
2.2 k$
ØV1
20 k$
ØV4
14 13 12 11 10
1 000 pF
ØV3
2SC4716
1 M$
390 $
68 $
ØH1
VCC
TGX
0.1 µF
0.1 µF
0.1 µF
0.1 µF
LZ2426J
SYSTEM CONFIGURATION EXAMPLE
PACKAGES FOR CCD AND CMOS DEVICES
PACKAGE
(Unit : mm)
14 WDIP (WDIP014-P-0400A)
0.03
9.00±0.10 (◊)
(◊ : Lid's size)
0.50±0.50
CCD
1
0.50±0.50
Glass Lid
CCD
Package
0.03
Cross section A-A'
7
MAX.
Rotation error of die : ¬= 1.0˚
0.80±0.05 (◊)
5.00±0.075
¬
1.27±0.25
A
5.02MAX.
2.55±0.10
5.00±0.075
3.50±0.30 3.35±0.10
10.00±0.10
8
1.39±0.05
9.00±0.10 (◊)
14
Center of effective imaging area
and center of package
1.96±0.05
10.00±0.10
A'
0.30TYP.
0.46TYP.
0.25
0.25±0.10
P-1.27TYP.
+0.5
10.16–0
M
10
PRECAUTIONS FOR CCD AREA SENSORS
PRECAUTIONS FOR CCD AREA SENSORS
(In the case of plastic packages)
– The leads of the package are fixed with
package body (plastic), so stress added to a
lead could cause a crack in the package
body (plastic) in the jointed part of the lead.
1. Package Breakage
In order to prevent the package from being broken,
observe the following instructions :
1) The CCD is a precise optical component and
the package material is ceramic or plastic.
Therefore,
ø Take care not to drop the device when
mounting, handling, or transporting.
ø Avoid giving a shock to the package.
Especially when leads are fixed to the socket
or the circuit board, small shock could break
the package more easily than when the
package isn’t fixed.
2) When applying force for mounting the device or
any other purposes, fix the leads between a
joint and a stand-off, so that no stress will be
given to the jointed part of the lead. In addition,
when applying force, do it at a point below the
stand-off part.
Glass cap
Package
Lead
Fixed
Stand-off
3) When mounting the package on the housing,
be sure that the package is not bent.
– If a bent package is forced into place
between a hard plate or the like, the package may be broken.
4) If any damage or breakage occurs on the surface of the glass cap, its characteristics could
deteriorate.
Therefore,
ø Do not hit the glass cap.
ø Do not give a shock large enough to cause
distortion.
ø Do not scrub or scratch the glass surface.
– Even a soft cloth or applicator, if dry, could
cause dust to scratch the glass.
(In the case of ceramic packages)
– The leads of the package are fixed with low
melting point glass, so stress added to a
lead could cause a crack in the low melting
point glass in the jointed part of the lead.
Low melting point glass
Lead
2. Electrostatic Damage
As compared with general MOS-LSI, CCD has
lower ESD. Therefore, take the following anti-static
measures when handling the CCD :
1) Always discharge static electricity by grounding
the human body and the instrument to be used.
To ground the human body, provide resistance
of about 1 M$ between the human body and
the ground to be on the safe side.
2) When directly handling the device with the
fingers, hold the part without leads and do not
touch any lead.
Fixed
Stand-off
11
PRECAUTIONS FOR CCD AREA SENSORS
ø The contamination on the glass surface
should be wiped off with a clean applicator
soaked in Isopropyl alcohol. Wipe slowly and
gently in one direction only.
– Frequently replace the applicator and do not
use the same applicator to clean more than
one device.
◊ Note : In most cases, dust and contamination
are unavoidable, even before the device
is first used. It is, therefore, recommended
that the above procedures should be
taken to wipe out dust and contamination
before using the device.
3) To avoid generating static electricity,
a. do not scrub the glass surface with cloth or
plastic.
b. do not attach any tape or labels.
c. do not clean the glass surface with dustcleaning tape.
4) When storing or transporting the device, put it in
a container of conductive material.
3. Dust and Contamination
Dust or contamination on the glass surface could
deteriorate the output characteristics or cause a
scar. In order to minimize dust or contamination on
the glass surface, take the following precautions :
1) Handle the CCD in a clean environment such
as a cleaned booth. (The cleanliness level
should be, if possible, class 1 000 at least.)
2) Do not touch the glass surface with the fingers.
If dust or contamination gets on the glass
surface, the following cleaning method is
recommended :
ø Dust from static electricity should be blown
off with an ionized air blower. For antielectrostatic measures, however, ground all
the leads on the device before blowing off
the dust.
4. Other
1) Soldering should be manually performed within
5 seconds at 350 °C maximum at soldering iron.
2) Avoid using or storing the CCD at high temperature or high humidity as it is a precise
optical component. Do not give a mechanical
shock to the CCD.
3) Do not expose the device to strong light. For
the color device, long exposure to strong light
will fade the color of the color filters.
12