S22MD1V/S22MD3 S22MD1V/S22MD3 Photothyristor Coupler ❈ Lead forming type ( I type ) and taping reel type ( P type ) of S22MD1V are also available ( S22MD1VI/S22MD1P ) ❈❈ TUV ( DIN-VDE0884 ) approved type is also available as an option. .. 1. ON-OFF operation for a low power load 2. For triggering high power thyristor and triac 6 Internal connection diagram 5 4 2 6 5 4 1 2 3 6.5± 0.5 S22MD1V 1 ( Unit : mm ) 3 1 2 3 4 5 6 0.9±0.2 1.2±0.3 Anode mark 7.12± 0.5 7.62± 0.3 0.5TYP. 3.5±0.5 ■ Applications S22MD1V 2.54± 0.25 3.7± 0.5 1. High repetitive peak OFF-state voltage ( VDRM : MIN. 600V ) 2. Low trigger current ( IFT : MAX. 10mA at R G = 20kΩ ) 3. High isolation voltage between input and output S22MD1V ••• V iso : 5 000V rms S22MD3V ••• V iso : 2 500V rms ❈ S22MD1V and S22MD3 are for 200V line. 4. Recognized by UL, file NO. 64380 ■ Outline Dimensions 3.35± 0.5 ■ Features 0.5± 0.1 8 0.8± 0.2 7 0.26± 0.1 θ : 0 to 13˚ S22MD3 2.54± 0.25 6 5 Anode Cathode NC Cathode Anode Gate θ Internal connection diagram 8 7 6 5 1 2 3 4 S22MD3 1 2 3 1.2± 0.3 4 1 2 5 6 0.85± 0.3 Anode mark 7.62±0.3 0.5±0.1 0.5TYP. 3.0± 0.5 3.5± 0.5 9.22± 0.5 0.26± 0.1 θ : 0 to 13˚ θ “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” 4 3 8 7 Anode Cathode Gate Anode/ Cathode S22MD1V/S22MD3 ■ Absolute Maximum Ratings Input Output ( Ta = 25˚C ) Parameter Symbol Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current ∗2 Repetitive peak OFF-state voltage ∗2 Repetitive peak reverse voltage ∗3 Isolation voltage Operating temperature Storage temperature ∗4 Soldering temperature IF VR IT I surge V DRM V RRM V iso T opr T stg T sol Rating S22MD1V S22MD3 50 6 200 2 600 600 5 000 2 500 -30 to +100 -30 to +100 -55 to +125 -40 to +125 260 Unit mA V mA rms A V V V rms ˚C ˚C ˚C ∗1 50H Z, sine wave ∗2 R G = 20kΩ ∗3 40 to 60% RH, AC for 1 minute ∗4 For 10 seconds ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF Reverse current IR Repetitive peak OFF-state current I DRM ∗5 Repetitive peak reverse current I RRM ON-state voltage VT IH Holding current Critical rate of S22MD1V dV/dt rise of OFF-state voltage S22MD3 Minimum trigger current I FT R ISO Isolation resistance t on Turn-on time ∗5 Applies only to S22MD1V ( Ta= 25˚C ) Conditions I F = 30mA V R = 3V V DRM = Rated, R G = 20kΩ V RRM = Rated, R G = 20kΩ I T = 200mA VD = 6V, R G = 20kΩ V DRM = 1/ 2 Rated, R G = 20kΩ VD = 6V, R L = 100Ω , R G = 20kΩ DC500V, 40 to 60% RH V D = 6V, R G = 20kΩ , R L = 100Ω , I F = 30mA MIN. 5 3 5 x 1010 − TYP. 1.2 1.0 0.2 1011 20 MAX. 1.4 10-5 10-6 10-6 1.4 1 10 50 Unit V A A A V mA V/ µs mA Ω µs S22MD1V/S22MD3 Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 60 200 Forward current I F ( mA ) RMS ON-state current I T ( mA rms ) 70 100 40 30 20 10 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 0 - 30 100 Fig. 3 Forward Current vs. Forward Voltage 0 25 50 75 100 Ambient temperature T a ( ˚C ) 125 Fig. 4 Minimum Trigger Current vs. Ambient Temperature 12 500 50˚C 100 V D = 6V R L = 100Ω 25˚C Minimum trigger current I FT ( mA ) T a = 75˚C 200 Forward current I F ( mA ) 50 0˚C - 25˚C 50 20 10 5 RG = 10kΩ 10 8 20kΩ 6 50kΩ 4 2 2 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage V F ( V ) 0 - 30 3.0 Fig. 5 Minimum Trigger Current vs. Gate Resistance Fig. 6 Break Over Voltage vs. Ambient Temperature 900 V D = 6V R L = 100Ω T a = 25˚C 50 R G = 10kΩ 800 Break over voltage V BO ( V ) Minimum trigger current I FT ( mA ) 100 20 10 5 2 1 0 20 40 60 80 Ambient temperature T a ( ˚C ) 700 600 20kΩ 50kΩ 500 400 300 200 100 1 2 5 10 20 50 Gate resistance R G ( kΩ ) 100 200 0 -30 -20 0 20 40 60 80 100 120 Ambient temperature T a ( ˚C ) 100 S22MD1V/S22MD3 Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature Fig. 8 Holding Current vs. Ambient Temperature 1 100 Critical rate of rise of OFF-state voltage dV/dt ( V/ µ s ) R G = 20kΩ V D = 6V V DRM = 1/ 2 Rated 0.5 Holding current I H ( mA ) 50 20 10 5 2 1 0.1 0.05 20kΩ 50kΩ 0.02 0 20 40 60 Ambient temperature T a 80 ( ˚C ) 0.01 - 30 100 Fig. 9 Repetitive Peak OFF-state Current vs. Ambient Temperature 5 Repetitive peak OFF-state current I DRM ( A ) RG = 10kΩ 0.2 V DRM = Rated 2 R G = 20kΩ 10 - 6 5 2 10 - 7 5 2 10 - 8 5 2 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 S22MD1V/S22MD3 ■ Basic Operation Circuit ● S22MD1V Medium/High Power Thyristor Drive Circuit + VCC 1 2 6 Load 5 VIN CG 3 RG ZS 4 AC 100V, 200V ZS : Snubber circuit Medium/High Power Triac Drive Circuit ( Zero-cross Operation ) + VCC 1 6 2 5 VIN Load AC 100V, 200V RG CG 3 4 ● S22MD3 Low Power Load Drive Circuit 1 + VCC 8 7 Load 2 3 VIN 4 RG CG RG CG AC 100V, 200V ZS 6 ZS : Snubber circuit 5 Medium/High Power Triac Drive Circuit 1 + VCC 8 7 Load 2 3 VIN RG CG RG CG 6 4 5 ● Please refer to the chapter “ Precautions for Use” ( Page 78 to 93 ) . AC 100V, 200V