SHARP S22MD2

S22MD2
S22MD2
Photothyristor Coupler
■ Features
■ Outline Dimensions
1. Long distance between anode and cathode
of photothyristor on the output side :
5.08mm
2. High repetitive peak OFF-state voltage
( VDRM : MIN. 600V )
3. Low trigger current ( IFT : MAX. 8mA
at R G = 20kΩ )
4. High isolation voltage between input and
output ( Viso : 5 000V rms )
* S22MD2 is for 200V line.
5.08± 0.25
6
5
Anode mark
2
3
1.2± 0.3
5
2
3
4
3.5± 0.5
7.62± 0.3
0.5TYP.
3.0± 0.5
0.5±0.1
1 4 NC
2
Anode
3
Cathode
■ Absolute Maximum Ratings
Output
6
0.85± 0.2
9.22± 0.5
1. ON-OFF operation for a low power load
2. For triggering high power thyristor and
triac
Input
1
4
■ Applications
Parameter
Forward current
Reverse voltage
RMS ON-state current
∗1
Peak one cycle surge current
∗2
Repetitive peak OFF-state voltage
∗2
Repetitive peak reverse voltage
∗3
Isolation voltage
Operating temperature
Storage temperature
∗4
Soldering temperature
7
6.5±0.5
S22MD2
1
Internal connection
diagram
2.54± 0.25
7
0.8± 0.2
( Unit : mm )
0.26± 0.1
θ : 0 to 13˚
5 Gate
6 Cathode
7 Anode
( Ta = 25˚C )
Symbol
IF
VR
IT
I surge
V DRM
V RRM
V iso
T opr
T stg
T sol
Rating
50
6
200
2
600
600
5 000
- 30 to + 100
- 40 to + 125
260
Unit
mA
V
mA rms
A
V
V
V rms
˚C
˚C
˚C
∗1 50Hz, sine wave
∗2 R G = 20kΩ
∗3 40 to 60% RH, AC for 1 minute
∗4 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
θ
S22MD2
■ Electro-optical Characteristics
Parameter
Forward voltage
Reverse current
Repetitive peak OFF-state current
Repetitive peak reverse current
ON-state voltage
Holding current
Critical rate of rise of OFF-state voltage
Minimum trigger current
Isolation resistance
Input
Output
Transfercharacteristics
( Ta = 25˚C )
Symbol
VF
IR
I DRM
I RRM
VT
IH
dV/dt
I FT
R ISO
Turn-on time
t on
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
Conditions
I F = 30mA
V R = 4V
V DRM = Rated, R G = 20kΩ
V RRM = Rated, R G = 20kΩ
I T = 200mA
V D = 6V, R G = 20kΩ
V DRM = 1/ 2 Rated, R G = 20kΩ
V D = 6V, R L = 100Ω , R G = 20kΩ
DC500V, 40 to 60% RH
V D = 6V, R G = 20kΩ , R L = 100Ω , I F =
30mA
MIN.
3
5x 1010
TYP.
1.2
1.0
0.3
6
1011
MAX.
1.4
10-5
10-6
10-6
1.4
1
8
-
Unit
V
A
A
A
V
mA
V/ µ s
mA
Ω
-
20
50
µs
Fig. 2 Forward Current vs.
Ambient Temperature
60
200
Forward current I F ( mA )
RMS ON-state current I T ( mA
rms
)
70
100
40
30
20
10
0
- 30
0
20
40
60
80
Ambient temperature T a ( ˚C )
0
- 30
100
Fig. 3 Forward Current vs. Forward Voltage
0
25
50
75
100
Ambient temperature T a ( ˚C )
125
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
12
500
50˚C
100
V D = 6V
R L = 100Ω
25˚C
Minimum trigger current I FT ( mA )
T a = 75˚C
200
Forward current I F ( mA )
50
0˚C
- 25˚C
50
20
10
5
R G = 10kΩ
10
8
20kΩ
6
50kΩ
4
2
2
1
0
0.5
1.0
1.5
2.0
2.5
Forward voltage V F ( V )
3.0
0
- 30
0
20
40
60
80
Ambient temperature T a ( ˚C )
100
S22MD2
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
Fig. 6 Break Over Voltage vs.
Ambient Temperature
900
100
V D = 6V
R L = 100Ω
T a = 25˚C
800
Break over voltage V BO ( V )
Minimum trigger current I FT ( mA )
50
20
10
5
2
1
700
1
2
5
10
20
50
Gate resistance R G ( kΩ )
100
50kΩ
500
400
300
200
0
- 30 - 20
200
0
20 40 60 80 100 120
Ambient temperature T a ( ˚C )
Fig. 8 Holding Current vs.
Ambient Temperature
1
100
V D = 6V
R G = 20kΩ
V DRM = 1/ 2 Rated
50
0.5
Holding current I H ( mA )
Critical rate of rise of OFF-state voltage
dV/dt ( V/ µ s )
20kΩ
600
100
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
20
10
5
RG =
10kΩ
0.2
0.1
20kΩ
50kΩ
0.05
0.02
2
1
0
20
40
60
Ambient temperature T
a
80
( ˚C )
0.01
- 30
100
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient Temperature
5
Repetitive peak OFF-state current I DRM ( A )
R G = 10kΩ
V DRM = Rated
2
R G = 20kΩ
10 - 6
5
2
10 - 7
5
2
10 - 8
5
2
0
20
40
60
80
Ambient temperature T a ( ˚C )
100
0
20
40
60
80
Ambient temperature T a ( ˚C )
100
S22MD2
■ Basic Operation Circuit
Medium/High Power Thyristor Drive Circuit
1
+ VCC
Load
2
3
VIN
7
4
ZS
AC 100V, 200V
6
CG
5
RG
ZS : Snubber circuit
Medium/High Power Triac Drive Circuit ( Zero-cross Operation )
1
+ VCC
●
Load
AC 100V, 200V
3
VIN
7
2
4
6
5
RG
CG
Please refer to the chapter “ Precautions for Use” ( Page 78 to 93 ) .