S16MD01/S16MD02/S26MD01/S26MD02 S16MD01/S16MD02 S26MD01/S26MD02 8-Pin DIP Type SSR for Low Power Control ■ Features ■ Outline Dimensions 1. Compact 8-pin dual-in-line package type 2. RMS ON-state current IT : 0.6Arms 3. Built-in zero-cross circuit (S16MD02 / S26MD02 ) 4. High repetitive peak OFF-state voltage S16MD01 / S16MD02 VDRM : MIN. 400V S26MD01 / S26MD02 VDRM : MIN. 600V 5. Isolation voltage between input and output ( Viso : 4,000Vrms ) 6. Recognized by UL, file No. E94758 7. Approved by CSA No. LR63705 Internal connection Diagram 8 1 5 2 3 4 2.54 ± 0.25 8 6 5 2 3 4 9.66 ± 0.5 6.5 ± 0.5 A Anode mark S16MD01 S26MD01 S16MD02 S26MD02 3.4 ± 0.5 For 200V lines A (Model No.) S16MD01 S16MD02 S26MD01 S26MD02 7.62 ± 0.3 0.5 ± 0.1 0.26 ± 0.1 θ : 0 to 13˚ θ ❈ Zero-cross circuit for S16MD02 and S26MD02 Terminal 1 , 3 and 4 are common ones of cathode. To radiate the heat, solder all of the lead pins on the pattern of PWB. ■ Absolute Maximum Ratings Parameter Forward current Input Reverse voltage RMS ON-state current *1 Peak one cycle surge current Output S16MD01 / S16MD02 Repetitive peak OFFstate voltage S26MD01 / S26MD02 *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Cathode Anode Cathode Cathode G T1 T2 1.2 ± 0.3 3.1 ± 0.5 ■ Model Line-ups 1 2 3 4 5 6 8 0.5TYP. 3.5 ± 0.5 1 1. Oil fan heaters 2. Microwave ovens 3. Refrigerators No built-in zerocross circuit Built-in zerocross circuit 6 ❈ Zero-cross circuit ■ Applications For 100V lines ( Unit : mm ) ( Ta = 25 ˚C) Symbol IF VR IT I surge V DRM V iso T opr T stg T sol Rating 50 6 0.6 6 400 600 4 000 - 25 to + 80 - 40 to + 125 260 Unit mA V A rms A V V V rms ˚C ˚C ˚C *1 50Hz sine wave *2 AC for 1 minute, 40 to 60% RH, f = 60Hz *3 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” S16MD01/S16MD02/S26MD01/S26MD02 ■ Electrical Characteristics Input Output Transfer characteristics ( Ta = 25˚C ) Parameter Forward voltage Reverse current Repetitive peak OFF-state current ON-state voltage Holding current Critical rate of rise of OFF-state voltage S16MD02 Zero-cross voltage S26MD02 Minimum trigger current Isolation resistance S16MD01 S26MD01 Turn-on time S16MD02 S26MD02 Symbol VF IR I DRM VT IH dV/dt Vox I FT R ISO t on Fig. 1 RMS ON-state Current vs. Ambient Temperature Conditions I F = 20mA V R = 3V V DRM = Rated I T = 0.6A V D = 6V V DRM = ( 1/ 2 ) • Rated Resistance load I F = 15mA V D = 6V, R L = 100 Ω DC500V, 40 to 60 % RH V D = 6V, R I F = 20mA L = 100 Ω Forward current I F ( mA ) RMS ON-state current I F ( Arms ) Unit V µA µA V mA V/µ s - - 35 V 5 x 1010 1011 10 - mA Ω - - 100 µs - - 50 µs 50 0.6 0.5 0.4 0.3 0.2 40 30 20 10 0.1 0 25 40 50 Ambient temperature T a 75 80 ( ˚C ) Minimum trigger current I FT ( mA ) 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 Forward voltage V F ( V ) 25 50 55 75 80 Ambient temperature T a ( ˚C ) 100 12 - 25˚C Ta =- 25 ˚C 100 0 Fig. 4 Minimum Trigger Current vs. Ambient Temperature ( S16MD01/S16MD02 ) 50˚C 25˚C 0˚C 200 0 - 25 100 Fig. 3 Forward Current vs. Forward Voltage Forward current I F ( mA ) MAX. 1.4 10 100 3.0 25 - 60 0.7 1 0 TYP. 1.2 - Fig. 2 Forward Current vs. Ambient Temperature 0.8 0 - 25 MIN. 100 3.0 VD = 6V RL= 100 Ω 10 8 6 S16MD01 S16MD02 4 2 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S16MD01/S16MD02/S26MD01/S26MD02 Fig. 5 Minimum Trigger Current vs. Ambient Temperature ( S26MD01/ S26MD02) 10 RL= 100 Ω S26MD01 6 S26MD02 4 2 1.2 1.1 1.0 0.9 0 20 40 60 80 Ambient temperature T a ( ˚C ) 0.8 - 30 100 Fig. 7 Relative Holding Current vs. Ambient Temperature 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 8 ON-state Current vs. ON-state Voltage 1.2 I F = 20mA T a = 25˚C V D = 6V 103 ON-state current I T ( mA ) 1.0 102 0.8 0.6 0.4 0.2 101 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 0 0 100 Fig. 9 Turn-on Time vs. Forward Current ( S16MD01) 0.5 1.0 ON-state voltage V T ( V ) 1.5 Fig.10 Turn-on Time vs. Forward Current (S26MD01 ) 200 100 VD = 6V RL= 100Ω T a = 25˚C VD = 6V RL= 100Ω T a = 25˚C Turn-ON time t on ( m s ) Turn-ON time t on ( µ s ) I T = 0.6A 1.3 8 0 - 30 Relative holding current I H ( t˚C ) / I H ( 25˚C ) x 100% 1.4 VD = 6V ON-state voltage VT ( V ) Minimum trigger current I FT ( mA ) 12 Fig. 6 ON-state Voltage vs. Ambient Temperature 50 40 30 20 100 50 40 30 10 10 20 30 40 50 Forward current I F ( mA ) 100 20 10 20 30 40 50 Forward current I F ( mA ) 100 S16MD01/S16MD02/S26MD01/S26MD02 Fig.12 Zero-cross Voltage vs. Ambient Temperature (S16MD02/S26MD02 ) Fig.11 Turn-on Time vs. Forward Current (S16MD02/S26MD02 ) 20 Load : R I F = 15mA Zero-cross voltage VOX ( V ) Turn-on time t on ( µ s ) VD = 6V RL= 100Ω T a = 25˚C 10 5 4 25 20 3 2 10 20 30 40 50 Forward current I F ( mA ) 15 - 30 100 0 20 40 60 80 Ambient temperature T a ( ˚C ) ■ Basic Operation Circuit R1 2 + VCC D1 ZS SSR 3 Load 8 AC 100V (S16MD01/S16MD02) AC 200V (S26MD01/S26MD02) 6 VI ZS : Surge absorption circuit Tr1 ( 1 ) DC Drive ( 2 ) Pulse Drive ( 3 ) Phase Control AC supply voltage Input signal Load current ( for resistance load) Notes 1 ) If large amount of surge is loaded onto V CC or the driver circuit, add a diode D 1 between terminal 2 and 3 to prevent reverse bias from being applied to the infrared LED. 2 ) Be sure to install a surge absorption circuit. An appropriate circuit must be chosen according to the load ( for CR, choose its constant ) . This must be carefully done especially for an inductive load. 3 ) For phase control, adjust such that the load current immediately after the input signal is applied will be more than 30mA. ■ Precautions for Use 1 ) All pins must be soldered since they are also used as heat sinks ( heat radiation fins) . In designing, consider the heat radiation from the mounted SSR. 2 ) For higher radiation efficiency that allows wider thermal margin, secure a wider round pattern for Pin No.8 when designing mounting pattern. The rounded part of Pin No.5 ( gate ) must be as small as possible. Pulling the gate pattern around increases the change of being affected by external noise. 3 ) As for other general cautions, refer to the chapter“Precautions for Use” 100