NTE2976 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D Low Input Capacitance D Low Static RDS(on) D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply D Inverter D G S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain Current, ID Continuous DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Pulse Width 3 103s, Duty Cycle 3 1/100) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Continuous DC Source Current, IS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Repetitive Avalanche Current (Tch = +1505C), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Single Avalanche Energy (Tch = +255C), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190mJ Repetitive Avalanche Energy (Tch = +255C), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ Operating Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.55C/W Dielectric Strength (Terminals−to−Case, AC, 1 minute), Vdis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV Mounting Torque, TOR Maximum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5Nwm Recommended . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3Nwm Rev. 10−13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Drain−Source Breakdown Voltage Test Conditions V(BR)DSS ID = 1mA, VGS = 0V Min Typ Max Unit 700 − − V Zero Gate Voltage Drain Current IDSS VDS = 700V, VGS = 0V − − 250 3A Gate−Source Leakage Current IGSS VGS = +30V, VDS = 0V − − +0.1 3A gfs ID = 3A, VDS = 10V 3 5 − S RDS(on) ID = 3A, VGS = 10V − 1.5 2.0 + 2.5 3.0 3.5 V Forward Transconductance Static Drain−Source On−State Resistance Gate Threshold Voltage VTH ID = 1mA, VDS = 10V Source−Drain Diode Forward Voltage VSD IS = 3A, VGS = 0V − − 1.5 V Total Gate Charge Qg VDD = 400V, VGS = 10V, ID = 6A − 35 − nC Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz − 1250 − pF Reverse Transfer Capacitance Crss − 250 − pF Output Capacitance Coss − 530 − pF − 60 110 ns − 160 250 ns Turn−On Time ton Turn−Off Time toff ID = 3A, RL = 50+ , VGS = 10V .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .165 (4.2) .669 (17.0) Max G D S .531 (13.5) Min .100 (2.54) .059 (1.5) Max .173 (4.4) Max .114 (2.9) Max