SHINDENGEN D2FS4

SHINDENGEN
Schottky Rectifiers (SBD)
Single
OUTLINE DIMENSIONS
D2FS4
Case : 2F
Unit : mm
40V 1.6A
FEATURES
● Small SMT
● Tj150℃
● PRRSM avalanche
guaranteed
APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office
● Telecommunication
Equipment
RATINGS
●Absolute Maximum Ratings (If not specified Tl=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40
Average Rectified Forward Current
IO
50Hz sine wave, R-load Ta=34℃ On alumina substrate
Peak Surge Forward Current
Repetitive Peak Surge Reverse Power
IFSM
PRRSM
50Hz sine wave, R-load Ta=25℃ On glass-epoxy substrate
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃
Pulse width 10μs, Tj=25℃
●Electrical Characteristics (If not specified Tl=25℃)
Item
Symbol
Conditions
Forward Voltage
VF
I F=1.6A,
Pulse measurement
Reverse Current
IR
VR=VRM,
Pulse measurement
f=1MHz, VR=10V
Junction Capacitance
Cj
θjl junction to lead
Thermal Resistance
θja junction to ambient On alumina substrate
junction to ambient On glass-epoxy substrate
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-55∼150
150
40
45
1.6
1.3
60
330
Unit
℃
℃
V
V
A
Ratings
Max.0.55
Max.2.5
Typ.150
Max.24
Max.90
Max.120
Unit
V
mA
pF
A
W
℃/W
D2FS4
Forward Voltage
Forward Current IF [A]
10
Tl=150°C [MAX]
Tl=150°C [TYP]
Tl=25°C [MAX]
Tl=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
Junction Capacitance Cj [pF]
0.1
100
1000
10
Junction Capacitance
Reverse Voltage VR [V]
1
D2FS4
f=1MHz
Tl=25°C
TYP
per diode
D2FS4
Reverse Current
1000
Tl=150°C [MAX]
100
Reverse Current IR [mA]
Tl=150°C [TYP]
Tl=125°C [TYP]
10
Tl=100°C [TYP]
1
Tl=75°C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
Reverse Voltage VR [V]
30
35
40
D2FS4
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
5
DC
D=0.05
0.1
4
0.2
0.3
3
0.5
2
SIN
1
0
0.8
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp /T
T
D2FS4
Forward Power Dissipation
1.6
Forward Power Dissipation PF [W]
1.4
DC
D=0.8
1.2
0.5
SIN
1
0.2
0.3
0.1
0.8
0.05
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp /T
T
D2FS4
Derating Curve
Average Rectified Forward Current IO [A]
3
DC
2.5
Alumina substrate
Soldering land 2mmφ
Conductor layer 20µm
Substrate thickness 0.64mm
D=0.8
2
0.5
SIN
1.5
0.3
0.2
1
0.1
0.5
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = 20V
IO
0
0
VR
tp
D=tp /T
T
D2FS4
Derating Curve
Average Rectified Forward Current IO [A]
2.5
Glass-epoxy substrate
Soldering land 2mmφ
Conductor layer 35µm
DC
2
D=0.8
1.5
0.5
1
SIN
0.3
0.2
0.5
0
0.1
0.05
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = 20V
IO
0
0
VR
tp
D=tp /T
T
D2FS4
Peak Surge Forward Capability
IFSM
100
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
Peak Surge Forward Current IFSM [A]
80
60
40
20
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP