SHINDENGEN General Purpose Rectifiers SMT Bridges OUTLINE DIMENSIONS S1ZB80 Case : 1Z: 1Z Case Unit : mm 800V 0.8A FEATURES ● Small SMT package ● High reliability with superior ● moisture resistance ● Applicable to Automatic Insertion APPLICATION ● Switching power supply ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM IO Average Rectified Forward Current 50Hz sine wave, R-load On alumina substrate Peak Surge Forward Current Current Squared Time IFSM I2 t Ta=25℃ 50Hz sine wave, R-load On glass-epoxy substrate Ta=25℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃ 1ms≦t＜10ms Tj=25℃ ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions VF IF=0.4A, Pulse measurement, Rating of per diode Forward Voltage VR =VRM , Pulse measurement, Rating of per diode Reverse Current IR θjl junction to lead Thermal Resistance θja junction to ambient On alumina substrate junction to ambient Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd On glass-epoxy substrate Ratings -40∼150 150 800 0.8 0.5 30 4.5 Unit ℃ ℃ V A Ratings Max.1.05 Max.10 Max.20 Max.76 Max.134 Unit V μA A A 2s ℃/W S1ZBx Forward Voltage Forward Current IF [A] 10 1 Tl=150°C [TYP] Tl=25°C [TYP] 0.1 Pulse measurement per diode 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage VF [V] 1 1.1 1.2 S1ZBx Forward Power Dissipation Forward Power Dissipation PF [W] 3 2.5 SIN 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave 1.2 S1ZBx Derating Curve Average Rectified Forward Current IO [A] 0.7 0.6 PCB Glass-epoxy substrate Soldering land 6 × 2mmφ Conductor layer 35µm SIN 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature Ta [°C] Sine wave R-load Free in air 140 160 S1ZBx Derating Curve Average Rectified Forward Current IO [A] 0.7 0.6 SIN 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature Ta [°C] Sine wave R-load Free in air Soldering land Conductor layer Substrate thickness Glass-epoxy 1mmφ 35µm Alumina 1mmφ 20µm 0.64mm 140 160 S1ZBx Peak Surge Forward Capability IFSM 40 10ms 10ms Peak Surge Forward Current IFSM [A] 35 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 30 25 20 15 10 5 0 1 2 5 10 20 Number of Cycles [cycles] 50 100