SHINDENGEN Varistor SMD OUTLINE DIMENSIONS VR61F1 Case : 1F (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Average Rectified Forward Current Peak Surge Forward Current Symbol Tstg Tj IO IFSM Conditions Ta = 25℃, Sine wave, R-load, Commercial frequency, On alumina substrate Ta = 25℃, Sine wave, R-load, Commercial frequency, On glass-epoxy substrate 50Hz, Sine wave, Non-repetitive 10/200μs, Non-repetitive 10/1000μs, Non-repetitive ●Electrical Characteristics (Tl=25℃) Item Symbol Conditions IF = 1mA Forward Voltage VF Junction Capacitance Cj Thermal Resistance IF = 10mA IF = 70mA f = 100kHz, VD = 1V, OSC = 50mA Ratings -55～150 150 0.37 Unit ℃ ℃ Arms 0.28 7.5 60 30 Arms A A Ratings Unit 2.05～2.55 2.50～3.00 V 2.85～3.35 TYP 15 pF Junction to ambient, On alumina substrate MAX 108 Junction to ambient, On glass-epoxy substrate MAX 157 θja ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR-61F1 Forward Voltage 1000 Forward Current IF [mA] 100 Tl=150°C [TYP] Tl=25°C [TYP] 10 1 Pulse measurement 0.1 0 1 2 3 Forward Voltage VF [V] 4 5 Junction Capacitance Cj [pF] 0 4 8 12 16 20 24 100 1000 Junction Capacitance Frequency f [MHz] VR-61F1 10000 TYP Tl = 25°C DC = 1V VR-61F1 Peak Surge Forward Capability IFSM 16 10ms 10ms Peak Surge Forward Current IFSM (rms) [A] 14 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 12 10 8 6 4 2 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 VR-61F1 Forward Power Dissipation 1.8 Tj=150°C Sine Wave 1.6 1.4 Power Dissipation P [W] 1.2 1 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 Average Rectified Forward Current IO (rms) [A] 0.5 Average Rectified Forward Current IO (rms) [A] VR-61F1 Derating Curve 0.5 Sine Wave R-load Free in air 0.4 Alumina substrate Soldering land 2mmφ Conductor layer 20µm Substrate thickness 0.64mm Glass-epoxy substrate Soldering land 2mmφ Conductor layer 35µm 0.3 Alumina substrate 0.2 Glass-epoxy substrate 0.1 0 0 50 100 Ambient Temperature Ta [°C] 150