CXA2525AM/AN RF Amplifier for CD Player and CD-ROM For the availability of this product, please contact the sales office. Description The CXA2525AM/AN is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF amplifier. (RF signal fc ≥ 12MHz) • RF equalizer (T type) • EFM time constant can be adjusted (with switching function) • APC (Automatic Power Control) function • Power saving function Functions • RF summing amplifier • RF equalizer • Focus error amplifier • Tracking error amplifier • APC circuit CXA2525AM 20 pin SOP (Plastic) CXA2525AN 20 pin SSOP (Plastic) Absolute Maximum Ratings • Supply voltage VCC • Storage temperature Tstg • Allowable power dissipation PD 7 V –65 to +150 °C 500 mW Operating Conditions • Supply voltage VCC – GND +3.0 to +5.5 V • Operating temperature Topr –20 to +75 °C Applications • CD players • CD-ROM drives Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96318C8Z CXA2525AM/AN Block Diagram 1.25V LD 1 VCC 1k 10k 10k 55k 25 40k 56k PD 2 VC BUFFER APC 19 MODE 40k 10k 56k VCC A 3 VCC 10k C 5 17 RF_M BGR 10k 10k 2k 16 BPF_SW 10k VC RF Summing Amp 348k D 6 15 LPF_SW RF Drive Amp 348k 64k 64k 64k GND 7 14 RFO_1 64k E 8 VC Focus Error Amp 13 RFO_2 174k 11p 5p 112k F 9 44k VC 18 VCC Standby 10k B 4 VC 10 20 APC_ON Tracking Error Amp 12 FE 73.4k 44k VC 112k 320k Tracking Drive Amp –2– 11 TE CXA2525AM/AN Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 2 PD I 1k APC amplifier output. 1 55k 8k APC amplifier input. 2 10k 124 10k 3 10k 10k 10k 10k 124 3 4 5 6 A B C D I I I I 4 Input of RF summing amplifier and focus error amplifier. 64k 124 64k 64k 348k 5 64k 348k 124 6 7 GND Ground. –3– CXA2525AM/AN Pin No. Symbol I/O Equivalent circuit Description 112k 124 44k 124 8 9 44k 112k 8 9 11 E F TE I I O Tracking error amplifier input for Pins 8 and 9; tracking error drive output for Pin 11. 320k 124 11 73.4k 120 10 VC 25 (VCC + GND) / 2 DC voltage output. 10 O 120 348k 12 13 FE RFO_2 O 348k Focus error amplifier output for Pin 12. 124 12 124 O 13 14 1k 14 17 RFO_1 RF_M O I 124 17 14 2k –4– Buffer switch output which sets the RF signal time constant. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. Non-inversion input of RF drive amplifier for Pin 17; RF signal output for Pin 14; resistance value connected between Pins 14 and 17 which determines the low frequency gain of RF drive amplifier. CXA2525AM/AN Pin No. Symbol I/O Equivalent circuit Description 124 15 15 LPF_SW O 124 17 124 16 16 BPF_SW O VC 18 VCC 124 MODE I 19 50k 20 APC_ON Transistor switch output which sets the RF amplifier BPF boost. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. VCC. 50k 19 Transistor switch output which sets the LPF cut-off frequency of RF amplifier. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. I 20 100k –5– 30k Multiple-speed mode switching input. VCC : High multiple-speed mode GND: Low multiple-speed mode APC amplifier ON/OFF switching. OFF when connecting to VCC; ON when connecting to GND. –6– V2-1 G2-1 G2-2 Offset voltage Voltage gain 1 Voltage gain 2 F2-2 V2-2 V2-3 Frequency response 2 Maximum output amplitude H Maximum output amplitude L 19 20 18 17 F2-1 Voltage gain difference G2-3 V1-3 Maximum output amplitude L Frequency response 1 16 15 14 13 12 11 O O O O O O O O O O O O 300mV 300mV 0V –300mV 300mV F1-2 Frequency response 10 V1-2 F1-1 Frequency response 9 Maximum output amplitude H –2.0V O O G1-3 Voltage gain 8 O –2.0V O O G1-2 Voltage gain 7 O 2.0V O O G1-1 Voltage gain 6 2.0V –2.0V 2.0V –2.0V V1-2 Offset voltage 5 12 14 13 14 13 14 14 13 14 –2.0V 0V V1-1 Offset voltage 4 18 2.0V 300mV Istb Standby current 3 18 7 –2.0V E4 300mV E3 300mV 2.0V E2 IEE RF amplifier FE amplifier — –50 –50 Pin DC current measurement Pin DC current measurement Pin DC current measurement –3 V1 = 100mVpp, f = 4MHz Difference for G1-2 DC voltage measurement — 1.9 –4 V1 = 100mVpp, f = 20kHz Difference for G2-2 DC voltage measurement –4 –3 G2-1 to G2-2 V1 = 100mVpp, f = 20kHz Difference for G2-1 17.7 V1 = 100mVpp, f = 1kHz 17.7 –50 DC voltage measurement V1 = 100mVpp, f = 1kHz — DC voltage measurement 1.3 –3 V1 = 100mVpp, f = 12MHz Difference for G1-1 DC voltage measurement 16.5 16.5 V1 = 100mVpp, f = 100kHz V1 = 100mVpp, f = 100kHz 16.5 –12 Pin DC current measurement V1 = 100mVpp, f = 100kHz — Pin DC current measurement Min. –2.3 2.4 — — 0 20.7 20.7 0 –1.3 2.3 — — 20.3 20 20 100 –10 1.8 –7.4 7.4 Typ. –1.9 — — — 3 23.7 23.7 50 –0.3 — — — 23.3 23 23 300 120 3 — 12 Max. V V dB dB dB dB dB mV V V dB dB dB dB dB mV mV mA mA mA Unit (Ta = 25°C, VCC = 2.5V, GND = VC, VEE = –2.5V) MeasureDescription of output waveform ment and measurement method point Current consumption 0V E1 Bias conditions 2 S1 S2 S3 S4 SW conditions ICC Symbol Current consumption Measurement item 1 Measurement No. Electrical Characteristics CXA2525AM/AN –7– 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 TE amplifier APC VC Measurement No. O 69mV 0V V4-1 V4-2 V4-3 V4-4 V4-5 Offset voltage 1 Offset voltage 2 Offset voltage 3 Offset voltage 4 Offset voltage 5 V5-1 177mV V3-3 Maximum output amplitude L Offset voltage 123mV V3-2 Maximum output amplitude H O F3-4 Frequency response 4 0V 300mV O 300mV O F3-3 Frequency response 3 O F3-2 Frequency response 2 F3-1 O O –2.0V 2.0V E3 2.0V –2.0V E4 1 11 V1 = 100mVpp, f = 1kHz V1 = 100mVpp, f = 1kHz DC voltage measurement 2.0V –2.0V –2.0V 10 –0.1 — I1 = 0.8mADC, DC voltage measurement DC voltage measurement 1.8 0.8 –1.2 — — 1.9 –3 –3 –4 –4 –3 17.9 17.9 –50 Min. DC voltage measurement DC voltage measurement DC voltage measurement DC voltage measurement DC voltage measurement DC voltage measurement V1 = 100mVpp, f = 200kHz Difference for G3-2 V1 = 100mVpp, f = 200kHz Difference for G3-1 V1 = 100mVpp, f = 20kHz Difference for G3-2 V1 = 100mVpp, f = 20kHz Difference for G3-1 G3-2 Voltage gain 2 O 0V E2 MeasureDescription of output waveform ment and measurement method point Frequency response 1 G3-1 Voltage gain 1 0V E1 Bias conditions G3-1 to G3-2 V3-1 Offset voltage S1 S2 S3 S4 SW conditions Voltage gain difference G3-3 Symbol Measurement item — — 2.45 2.1 0.1 –1.6 — — — — — — 0 20.9 20.9 0 Typ. 0.1 0 — — 1.6 –0.1 –1.9 — — — — — 3 23.9 23.9 50 Max. V V V V V V V V dB dB dB dB dB dB dB mV Unit CXA2525AM/AN –8– E1 V1 S4 S3 VEE S2 S1 VEE VCC VEE VCC D C B A PD LD 3µ 33µ VC F E GND E2 I1 10 9 8 7 6 5 4 3 2 1 10k Electrical Characteristics Measurement Circuit 44k 44k 112k 174k 64k 64k 64k 64k 10k 10k 10k 10k APC 55k 112k Tracking Error Amp Focus Error Amp 348k 348k 1k 73.4k RF Summing Amp 10k 56k 10k VCC 10k 56k 1.25V 2k Tracking Drive Amp 320k 5p BGR 11p VC BUFFER Standby 25 RF Drive Amp 40k 40k VCC VCC 11 12 13 14 15 16 17 18 19 20 TE FE RFO_2 RFO_1 LPF_SW 150p BPF_SW RF_M VCC MODE APC_ON 1p 510 E3 E4 10k 10k 10k 10k 3.9k 1k CXA2525AM/AN 1µ 10µ 22 VCC –9– VC F IN E IN D IN C IN B IN A IN 100µ D C B A PD VC F E GND 500 100 LD 10 9 8 7 6 5 4 3 2 1 44k 44k 112k 174k 64k 64k 64k 64k 10k 10k 10k 10k APC 55k 10k 112k Tracking Error Amp 1k VC 73.4k RF Summing Amp 10k 56k Focus Error Amp 348k 348k VCC 10k 56k 1.25V BGR 2k Tracking Drive Amp 320k 5p 11p VC BUFFER VC Standby 25 RF Drive Amp 40k 40k VCC VC VCC 11 12 13 14 15 16 17 18 19 20 TE FE 30k RFO_2 RFO_1 LPF_SW RF Out 1000p 3.9k 1k Tracking Error Out Focus Error Out VC 4700p 1p 390 13p MODE 68p BPF_SW RF_M VCC MODE APC_ON Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. VC 10k Application Circuit (Double-/sextuple-speed switching) CXA2525AM/AN CXA2525AM/AN Note on Operation The RF AC maximum output amplitude is 1.3 Vpp when Pin 13 and 14 are capacitor-coupled shown in Application Circuit. Description of Operation RF Amplifier The signal currents from the photodiodes A, B, C and D are I-V converted, and input to Pins 3, 4, 5 and 6. These signals are added at the RF summing amplifier and inverted at the RF drive amplifier and then output to Pin 14. 390 68p 1k 3.9k 4.9k RF_ M A I-V B I-V I-V I-V C D 10k 3 4 5 6 14 17 RFO LPF_SW 15 10k 10k 2k 10k 10k VC VC RF Summing Amp RF Drive Amp The low frequency component of RFO output voltage is as follows: VRFO = 10k 4.9k × × (A + B + C + D) 10k 2k = 2.45 × (A + B + C + D) Focus Error Amplifier The operation of (B + D) – (A + C) is performed and the resulting signal is output to Pin 12. 15P 348k I-V I-V I-V I-V A B C D 64k 3 4 5 6 FE 64k 12 Focus Error Amp 64k 64k 174k 15P 348k VC The low frequency component of FE output voltage is as follows: VFE = 348k × (B + D – A – C) 64k = 5.43 × (B + D – A + C) – 10 – 13p 1p BPF_SW 16 CXA2525AM/AN Tracking Error Amplifier Each signal current from the photodiodes E and F is I-V converted and input to Pins 8 and 9. These signals undergo operational amplification at the tracking error amplifier and tracking drive amplifier, and are output to Pin 12. 11P VC 5P 112k 320k E 73.4k 8 I-V TE 44k VC F 12 9 I-V 44k 112k The low frequency component of TE output voltage is as follows: VTE = 112k 320k × × (F – E) 44k 73.4k = 11.1 × (F – E) Center Voltage Generation Circuit The center voltage of VR = (VCC + GND) is supplied. The maximum current is approximately ±3mA. Vcc Vcc 40k Vc Buffer 25 VR 10 VC 40k APC Circuit When the laser diode is driven with constant current, the optical output possesses large negative temperature characteristics. Therefore, the current must be controlled with the monitor photodiode to ensure the output remains constant. When APC_ON pin is connected to GND, APC is ON; connected to VCC, it is OFF. VCC 100µ 56k 22 PD 10k 2 1k LD 1 55k 10k 56k 10k 1µ 1.25V – 11 – 10µH 100 500 CXA2525AM/AN Example of Representative Characteristics RFO_1 Frequency Response (W/O EQ) RFO_2 Frequency Response (W/O EQ) 30 20 20 GAIN [dB] GAIN [dB] 30 10 0 100k 10 1M 10M 0 100k 100M 1M 10M FREQ. [Hz] FREQ. [Hz] RF_Out Frequency Response (T-EQ)∗ TE_Out Frequency Response 30 20 20 GAIN [dB] GAIN [dB] 30 100M 10 10 MODE = LOW MODE = HIGH 0 100k MODE = LOW MODE = HIGH 0 1M 10M 100M 1k 10k FREQ. [Hz] 100k 1M FREQ. [Hz] ∗T-EQ As shown in Application Circuit FE_Out Frequency Response APC Characteristics 2.5 30 2.0 1.5 20 LD [V] GAIN [dB] 1.0 10 0.5 0 –0.5 –1.0 0 100 1k 10k 100k –1.5 FREQ. [Hz] –2.0 0 100 200 PD [mV] – 12 – 300 CXA2525AM/AN Package Outline Unit: mm CXA2525AM 20PIN SOP (PLASTIC) 300mil + 0.4 12.45 – 0.1 + 0.4 1.85 – 0.15 20 11 6.9 10 0.45 ± 0.1 0.5 ± 0.2 1 + 0.2 0.1 – 0.05 7.9 ± 0.4 + 0.3 5.3 – 0.1 0.15 + 0.1 0.2 – 0.05 1.27 ± 0.12 M PACKAGE STRUCTURE EPOXY / PHENOL RESIN PACKAGE MATERIAL SONY CODE SOP-20P-L01 LEAD TREATMENT SOLDER PLATING EIAJ CODE ∗SOP020-P-0300-A LEAD MATERIAL COPPER ALLOY PACKAGE WEIGHT 0.3g JEDEC CODE CXA2525AN 20PIN SSOP (PLASTIC) + 0.2 1.25 – 0.1 ∗6.5 ± 0.1 0.1 20 11 1 6.4 ± 0.2 ∗4.4 ± 0.1 A 10 + 0.1 0.22 – 0.05 + 0.05 0.15 – 0.02 0.65 ± 0.12 0.5 ± 0.2 0.1 ± 0.1 0° to 10° DETAIL A NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN SONY CODE SSOP-20P-L01 LEAD TREATMENT SOLDER / PALLADIUM PLATING EIAJ CODE SSOP020-P-0044 LEAD MATERIAL COPPER / 42 ALLOY PACKAGE WEIGHT 0.1g JEDEC CODE NOTE : PALLADIUM PLATING This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame). – 13 –