CXA2555Q RF Amplifier for CD Player/CD-ROM For the availability of this product, please contact the sales office. Description The CXA2555Q is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF AC amplifier (RF AC signal fc ≥ 20MHz) • 4-mode RF equalizer (active filter type) • RF equalizer boost amount and cut-off frequency adjustable • EFM time constant adjustable (switching function provided) • Peak hold time constant of mirror circuit adjustable • Tracking error amplifier cut-off frequency adjustable • Tracking error amplifier voltage gain adjustable • Center error amplifier • APC (Automatic Power Control) function • APC ON/OFF control • Supports laser coupler Absolute Maximum Ratings • Supply voltage VCC • Storage temperature Tstg • Power consumption PD 7 –65 to +150 800 V °C mW 32 pin QFP (Plastic) Applications • CD players • CD-ROM drives Functions • RF summing amplifier • RF equalizer • Focus error amplifier • Tracking error amplifier • Center error amplifier • Mirror detection function • APC circuit Operating Conditions • Supply voltage VCC – GND 3.0 to 5.5 V • Operating temperature Topr –20 to +75 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96730B76 CXA2555Q RFO RFI SUM OUT EQ IN RF C BST C FC C APC ON Block Diagram 32 31 30 29 28 27 26 25 VCA BOOST FILTER CONTROL CONTROL CONTROL LD 1 LPF MODE SW DELAY MIXER PD HPF 2 BOOST 20k 80k 10p VC 4 23 MODE 2 44p 44k 39k PD2 VCC VC 18k 3 VCA VCC VS PD1 LPF 24 MODE 1 80k HOLD PEAK /BOT 22 RFO 1 VC APC ON 80k 80k 22k 1.3V 51k 21 RFO 2 1.0V 56k 10k 1.25V E VCC 10k Open only for L/L mode 5 1k VC 10k 40k 56k 55k 20 VCC 40k VS 1.25V VC F VC VCC VC 20k 6 19 40k 40k 20k MIRR VC 20k VCA 20k GND 10k 87k 18 CP 7 16k 10k VC VC 8 23k 174k 16k VCA 20k 73.34k 20k 17 320k VC 27p 164k CE1 CE TE C 13 14 15 16 VC 12 FE 11 FE B 10 CE IN 2p 9 TE GND TE1 27p –2– MIRR T CXA2555Q Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 2 PD I 1 APC amplifier output. 1k 55k APC amplifier input. 2 8k 10k 147 20k 3 10k 20k 147 3 4 PD1 PD2 I I 16k 4 Input of RF summing amplifier and focus error amplifier. 16k 174k 164k 7 Ground. GND 147 147 6 5 5 6 8 12 13 E F TE1 TE C TE I I O I O 147 147 160k 8 13 VCA 36.7k 147 12 –3– Tracking error amplifier input for Pins 5 and 6; tracking error amplifier output for Pin 8; tracking error amplifier lowfrequency gain setting for Pin 12; tracking error amplifier output for Pin 13. CXA2555Q Pin No. Symbol I/O Equivalent circuit Description 147 9 9 10 11 CE IN CE1 CE I O O 147 147 20k 10 11 Center error amplifier input for pin 9; inverting amplifier output for pin 10; non-inverting amplifier output for pin 11. 20k 147 14 164k 14 15 FE B FE O O 174k 147 15 120 16 VC O 16 120 Focus bias adjustment for Pin 14; focus error amplifier output for Pin 15. (Vcc + GND)/2 DC voltage output. VCC 17 MIRR T I 147 120k 80k 10k 17 10k –4– Peak hold time constant adjustment. CXA2555Q Pin No. Symbol I/O Equivalent circuit 1.5k 18 CP Description Connects a mirror hold capacitor. Non-inverted input of mirror comparator. 80k I 147 18 20k 19 MIRR 147 40k O 19 Mirror comparator output. 100k 20 VCC Power supply. 3k 147 21 21 22 RFO 2 RFO 1 O O 147 Buffer switch output for the RF time constant setting for Pin 21. ON when Pins 23 and 24 are connected to GND. EQ signal output for Pin 22. 22 Double-speed mode switching input. 23 MODE 2 147 I 10k 40k 24 25 MODE 1 APC ON I I Mode 1 Mode 2 ×1 GND GND ×N VCC GND × 1.5N GND VCC × 2.0N VCC VCC 23 147 10k 40k 24 N is varied according to the external resistor connected to Pin 26. 147 25 100k –5– Switching pin for APC amplifier ON/OFF. OFF when connected to Vcc; ON when connected to GND. CXA2555Q Pin No. Symbol I/O Equivalent circuit Description 5k 5k 26 FC C 5k 26 5k 27 27 BST C I 28 RF C I Input to set the RF equalizer LPF cut-off frequency. 147 I Sets the high-frequency boost amount of RF equalizer. Sets the low-frequency gain of RF amplifier and RF equalizer. 10k 147 28 430 147 29 EQ IN I 29 RF equalizer input. 2k 10k 10k 20k 30 SUM OUT RF summing amplifier output inversion. O 20k 147 30 –6– CXA2555Q Pin No. Symbol I/O Equivalent circuit Description 39k 31 RFI I Mirror circuit input. The RF summing amplifier output is input. 147 18k 31 44k 15k 32 RFO 147 32 O 15k –7– RF signal output. Eye pattern check point. –8– 16 V1 = 100mVp-p f = 100kHz 32 G1-1 Voltage gain Maximum output amplitude H V2-2 Maximum output amplitude L 18 19 V2-3 F2-2 Frequency response 2 16 15 17 G2-2 Voltage gain 2 F2-1 G2-1 Voltage gain 1 Frequency response 1 V2-1 Offset voltage G2-3 V1-3 Maximum output amplitude L O O 17.5 20.5 23.5 V1 = 100mVp-p f = 1kHz 15 –3 V1 = 100mVp-p, f = 20kHz Difference for G2-2 DC voltage measurement DC voltage measurement 15 15 15 O O 300mV –3 V1 = 100mVp-p, f = 20kHz Difference for G2-1 15 — 1.9 –2.5 300mV 17.5 20.5 23.5 V1 = 100mVp-p f = 1kHz — — — 2.5 –2.3 –1.7 2.4 — — 0 60 15 0 –60 DC voltage measurement 15 –1.6 –0.95 0V — — DC voltage measurement DC voltage measurement 1.75 2.25 — 32 32 — V1 = 100mVp-p, f = 10MHz Difference for G1-1 32 11.5 –4.5 22 275 –300mV 300mV 8 V1 = 100mVp-p, f = 100kHz 4.5 Difference for G1-1 32 –3 –8 V1 = 100mVp-p, f = 100kHz –11.5 Difference for G1-1 19 32 G2-1 – G2-2 B A C 15 O O O O O O O O F1-1 Frequency response V1-2 O O G1-3 VCA gain 2 Maximum output amplitude H O O G1-2 O VCA gain 1 O 140 V V dB dB dB dB dB mV V V dB dB dB dB mV mA –65 43.5 DC current measurement 30 32 18.5 V1-1 0.3V 0V Offset voltage 0V Typ. Max. Unit DC current measurement –43.5 –30 –18.5 mA B Min. 7 E3 IEE Current consumption B E2 DC current measurement ICC Current consumption S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 20 E1 Bias conditions Description of output waveform and measurement method SW conditions (Ta = 25°C, VCC = 2.5V, GND = Vc, VEE = –2.5V) Measurement point Symbol Measurement item Voltage gain difference 14 13 12 11 10 9 8 7 6 5 2 1 FE amplifier No. RF DC amplifier Electrical Characteristics CXA2555Q –9– F3-1 O O O G4-1 F4-1 Voltage gain 1 Frequency response 1 Maximum output amplitude H V4-2 Maximum output amplitude L V4-3 35 36 34 33 32 V4-1 O O Maximum output amplitude H V3-2 Maximum output amplitude L V3-3 O F3-4 Frequency response 4 O F3-3 O Frequency response 3 Frequency response 2 O B O G3-5 VCA gain 2 F3-2 A O G3-4 VCA gain 1 Frequency response 1 C O G3-3 Voltage gain difference O G3-2 Voltage gain 2 O G3-1 Voltage gain 1 B V3-1 Offset voltage B O O O O S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 SW conditions Symbol Measurement item Offset voltage 31 30 29 28 27 26 25 24 23 22 21 20 TE amplifier CE amplifier No. 0.3V 0V V1 = 100mVp-p, f = 1kHz 23.9 26.9 29.9 –3 –3 –3 V1 = 100mVp-p, f = 20kHz Difference for G3-1 V1 = 100mVp-p, f = 20kHz Difference for G3-2 V1 = 100mVp-p, f = 180kHz Difference for G3-1 V1 = 100mVp-p, f = 180kHz Difference for G3-2 13 13 13 11 300mV DC voltage measurement — DC voltage measurement 0.85 –3 V1 = 100mVp-p, f = 20kHz Difference for G3-1 11 11 17 V1 = 100mVp-p, f = 1kHz Difference for G2-1 11 300mV –90 DC voltage measurement — 11 DC voltage measurement 1.9 0V 13 13 13 DC voltage measurement dB V1 = 100mVp-p, f = 1kHz 11.9 14.9 17.9 –3 G3-1 – G3-2 13 13 dB 17.9 20.9 23.9 V1 = 100mVp-p f = 1kHz 13 –2.0 17.9 20.9 23.9 — — — — — 2.0 — — 23 200 –2.1 –0.85 1.7 — 20 65 –2.2 –1.7 2.4 — — — — 0 V V dB dB mV V V dB dB dB dB dB dB dB mV V1 = 100mVp-p f = 1kHz 150 13 30 –60 DC voltage measurement 13 Min. Typ. Max. Unit 13 0V E3 Description of output waveform and measurement method Measurement point 300mV 300mV E2 E1 Bias conditions CXA2555Q – 10 – O O O O G5-3 F5-1 F5-2 F5-3 Boost gain O O O O Bottom hold frequency response F6-2 Maximum operating frequency 1 F6-3 Maximum operating frequency 2 F6-4 V6-3 V6-4 Minimum input voltage Maximum input voltage 55 56 57 54 53 O O Mirror hold frequency response F6-1 52 51 50 O VN Output noise O B V6-2 O V5-4 Maximum output amplitude L O O O O O A Low level output voltage O Maximum output amplitude H V5-3 O O O O O O O O F5-4 Frequency response 4 Frequency response 3 Frequency response 2 Frequency response 1 O G5-2 VCA gain 1 O O O O O O O –400mV –400mV –400mV –400mV –400mV –200mV –400mV –400mV 0V –300mV 300mV 0V 1.0V 19 19 19 19 19 19 19 19 22 22 22 22 22 22 22 22 22 22 22 O 0V G5-1 0.3V Voltage gain 1 0V 21 B V5-2 E3 Offset voltage B E2 Measurement point V5-1 E1 Bias conditions Offset voltage S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 SW conditions Symbol Measurement item High level output voltage V6-1 48 47 46 45 44 43 42 41 40 39 38 37 RFAC Amplifier (RF Equalizer + Sum Amplifier) MIRR No. 1.5 –3 –3 –3 V1 = 100mVp-p, f = 2MHz Difference for G5-1 V1 = 25mVp-p, f = 1MHz Difference for G1-1 V1 = 25mVp-p, f = 10MHz Difference for G1-1 V1 = 25mVp-p, f = 15MHz Difference for G1-1 f (V1) = 10kHz f (V1) = 10kHz V1 = 800mVp-p V1 = 800mVp-p V1 = 800mVp-p V1 = 0.8Vp-p, 55% AM Mod. V1 = 0.8Vp-p, f = 10kHz V1 = 0.8Vp-p, f = 10kHz HPF = 400Hz, LPF = 3MHz V5-1 – V5-4 V5-3 – V5-1 — 0.35 250 40 — — — 1.8 — 0.45 1.15 — — — — 4 8 — — — — 550 400 — — — 0.9 1.8 — — — 900 600 –2.2 — 6 — — — — — — 6.5 10.5 22.5 26.5 0.8 0.45 0.85 –3 4.5 V1 = 25mVp-p, f = 100kHz Difference for G5-1 V1 = 25mVp-p, f = 20MHz Difference for G1-1 17 0.25 Vp-p Vp-p kHz kHz Hz Hz V V mV V V dB dB dB dB dB dB dB V V Typ. Max. Unit 0.25 0.75 1.15 Min. V1 = 25mVp-p, f = 100kHz Description of output waveform and measurement method CXA2555Q 63 62 61 60 59 58 APC VC No. V7-2 V7-3 V7-4 V7-5 Output voltage 2 Output voltage 3 Output voltage 4 Output voltage 5 VC V7-1 Output voltage 1 Output voltage Symbol Measurement item B B O S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 SW conditions 0V E1 0.3V 0V 0V 177mV 123mV 69mV E2 Bias conditions 0V E3 16 1 1 1 1 1 Measurement point — –1.6 –0.9 — I1 = 0.8mADC DC voltage measurement DC voltage measurement –0.1 1.8 0.3 DC voltage measurement DC voltage measurement 0 –0.9 2.4 1.6 0.1 0 — — V V V V V V Min. Typ. Max. Unit DC voltage measurement –1.2 –0.35 1.4 DC voltage measurement Description of output waveform and measurement method CXA2555Q – 11 – CXA2555Q Electrical Characteristics Measurement Circuit 20k 20k VCC 2k B A S9 VCC C 20k 5.1k VCC S13 10k S8 5.1k S7 27 26 25 RF C BST C FC C APC ON LD 28 EQ IN 1 VCC 29 SUM OUT I1 30 RFI S10 31 RFO VEE 32 E2 2 VEE MODE 1 S12 VCC S11 VEE VCC 24 MODE 2 23 PD 3 PD1 RFO 1 22 4 PD2 RFO 2 21 5 E VCC 20 6 F MIRR 19 7 GND 8 TE1 VEE 1µ 10k 1µ 10k S1 S2 44k S3 VCC 112k 44k S4 0.033µ VEE CP 18 CE1 CE TE C TE FE B FE VC E3 CE IN 112k 9 10 11 12 13 14 15 16 MIRR T 17 VCC S5 10k V1 10k 100k A E1 10k S6 C B 20k – 12 – 10k 33µ 33µ VEE 20k 10k VEE CXA2555Q Application Circuit LD ON VCC 100µ/6.3V 10 47k VC 0.1µ GND 3.9k 0.1µ 6.8k 31 30 29 28 27 26 SUM OUT EQ IN RF C BST C FC C 25 APC ON 32 RFI 1µ/6.3V RFO 10µH 24 MODE 1 IN MODE 2 23 MODE 2 IN 1 LD 2 PD PD1 IN 3 PD1 RFO 1 22 PD2 IN 4 PD2 RFO 2 21 MODE 1 500 100 1000p 4700p RF AC Out VCC VC 62k E IN F IN 33µ 100k ∗ 5 E VCC 20 6 F MIRR 19 7 GND 8 TE1 VC 3p 0.1µ 47k 33µ 120k Mirror Out 0.1µ CP 18 CE1 CE TE C TE FE B FE VC 0.1µ CE IN VC 9 10 11 12 13 14 15 16 MIRR T 17 10k VC 10k Tracking Error Out Center Error Out 47k VC Focus Error Out AL IN Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. – 13 – CXA2555Q Description of Functions RF Block The RF signal processing is performed by this circuit. The output is separated to AC and DC. The AC is the capacitance-coupled input via the equalizer circuit and used for the EFM demodulation signal processing. The DC contains the DC component and is used for the mirror, defect and FOK signal processings. The VCA function is provided for both the AC and DC signal processing systems. Pin 28 is the control voltage input pin. (See the characteristics graphs on page 19 and page 20 for the gain and control voltage.) RF Equalizer Block Diagram is as shown below: EQ IN LPF1 DELAY FC C MIXER HPF Boost FC C BST C LPF2 LPF3 LPF4 VCA FC C FC C FC C RF C EQ OUT The equalizer function is provided for the AC signal processing system for the EFM signal demodulation. The each filter is constructed in the Bessel type which has the little group delay difference. The boost frequency and boost amount can be set by the external resistors connected to Pins 26 and 27. (See the characteristics graphs on page 19 for the boost frequency and boost amount.) The transmittance for each filter is as follows: HPF: (KS2) / (S2 + 3.22597S + 2.94933) LPF1: (2.94933 ) / (S2 + 3.22597S + 2.94933) LPF2: (3.32507 ) / (S2 + 2.75939S + 3.32507) LPF3: (4.20534 ) / (S2 + 1.82061S + 4.20534) LPF4: (1.68536 ) / (S + 1.68536) – 14 – CXA2555Q RF DC Amplifier The signal currents from the photodiodes A, B, C and D are I-V converted and input to Pins 3 and 4 as PD1 = A + C, PD2 = B + D. These signals are added by the RF summing amplifier, inverted by the RF drive amplifier and output to Pin 32. The VCA control voltage on Pin 28 is used for the gain adjustment. 47k Vc RF C SUM OUT RFO 32 28 30 10k I-V PD1 PD2 20k 3 20k VCA 4 Vc I-V RF Summing Amp The low frequency component of the RFO output voltage is as follows: VRFO = 4.9 × (PD1 + PD2) (RFC voltage = 1/2 VC) Focus Error Amplifier The operation of PD2-PD1 is performed and the resulting signal is output to Pin 15. 27p 174k I-V PD1 PD2 I-V 16k 15 FE 3 Focus Error Amp 16k 4 164k 87k 27p Vc 14 FE B 47k The low frequency component of the FE output voltage is as follows: VFE = 174k × (PD2 – PD1) 16k = 10.9 × (PD2 – PD1) – 15 – CXA2555Q Tracking Error Amplifier The signal current from the photodiode F is I-V converted and input to Pin 6 via the input resistor. The signal current from the photodiode E is I-V converted and input to Pin 5 after its gain is adjusted by the volume. These signals undergo operational amplification at the tracking error amplifier, VCA and tracking drive amplifier and they are output to Pin 13. 14p Vc 2p 62k 320k 100k I-V E 44k F 73.4k 5 VCA 13 TE Vc 6 I-V 112k TE1 8 12 TE C Vc 47k The low frequency component of the TE output voltage is as follows: VTE = 112k 320k × × (F – E) 44k 73.4k = 11.1 × (F – E) (TEC voltage = 1/2 VC) Center Error Amplifier The input signal is operational amplified by the center error amplifier and center drive amplifier after passing via the input resistor and then it is output to Pin 11. 20k 10k Vin CE IN 20k 9 11 CE 100k 23k CE1 10k 10 Vc The low frequency component of the CE output voltage is as follows: VCE = 100k × 10k 20k × Vin 20k = 10 × Vin – 16 – CXA2555Q Mirror Circuit The mirror circuit performs peak and bottom hold after RFI signal has been amplified. The peak hold is executed with the time constant which follows the traverse signal of 100kHz for L/L mode (both of Pins 23 and 24 are connected to GND) and maximum 600kHz (adjustable with the DC voltage on Pin 17) for L/H, H/L, H/H modes. The bottom hold is executed with the time constant which follows the rotation cycle envelope fluctuation. 44k RFI Mirr Hold Amp 1.0V 3.125V 51k Vc 39k 80k 44p 18k H G 31 Vc Mirr Amp I 10p Vc RFO Peak & Bottom Hold 18 22k 80k K Mirr Dif Amp 20k Mirr Comparator 1.3V RFO G (RFI) H (PEAK HOLD) AAAAAA AAA AA AAAAAA AAA AA AAAAAA AAA AA AAAAAA AAA AA AAAAAA AAA AA AAAAAA AAA Vc 0.33µ J 80k Open only 80k for L/L mode CP Vcc 17 19 MIRR T MIRR 0V 0V 0V I (BOTTOM HOLD) 0V J K (MIRROR HOLD) H MIRR L The mirror signal is output by comparing to the signal K (2/3 level of the J peak value which is peak-held with a large time constant) where the difference of hold signals H and I is obtained. The mirror output is low for tracks on the disc and high for the area between tracks (the mirror areas). In addition, a high signal is output when a defect is detected. The mirror hold time constant must be sufficiently large in comparison with the traverse signal. – 17 – CXA2555Q Center Voltage Generation Circuit The center voltage of VR = (Vcc + GND)/2 is supplied. The maximum current is approximately ±3mA VCC VCC 40k Vc Buffer 25 16 VR Vc 40k APC Circuit When the laser diode is driven by a constant current, the optical power output has extremely large negative temperature characteristics. The APC circuit is used to maintain the optical power output at a constant level. The laser diode current is controlled according to the monitor photodiode output. APC is ON by connecting APC_ON pin to GND; it is OFF by connecting the pin to Vcc. VCC 56k 8k PD 10k 2 100µ 1k 1 10k 55k 10 LD 56k 10µ 100 10k 1.25V 500 1µ – 18 – CXA2555Q RF AC Characteristics Graphs (Pin 22) Frequency response Boost gain characteristics 28 8 1 VC 2 Rbst = 3.9kΩ L/H RF C = 26 6 Rfc = 6.8kΩ L/L H/L 5 Boost [dB] Gain [dB] Rfc =6.8kΩ, 1 RF C = VC 2 7 H/H 24 4 3 2 22 1 0 20 10–1 –1 100 Frequency [MHz] 5 0 101 Cut-off frequency Rbst = 0Ω, RF C = 20 35 1 VC 2 H/H Mode 30 Gv [dB] Fc [MHz] 15 VCA characteristics 25 20 10 Rbst [kΩ] 15 10 25 20 15 5 10 4 6 8 10 12 14 Rfc [kΩ] 16 18 20 0.8 1.0 1.2 1.4 RF C [V] 1.6 1.8 Notes) In the graphs above, Rfc: FC C (pin 26) external resistor value Rbst: BST C (pin 27) external resistor value ∗ To ensure stable operation, it is recommended to select Rfc value of 6.2kΩ and above, and Rbst of 10kΩ and below in all cases. – 19 – CXA2555Q RF DC Characteristics Graphs (Pin 32) Frequency response VCA characteristics 25 RF C = 30 1 VC 2 28 26 24 Gv [dB] Gain [dB] 20 15 22 20 18 16 14 12 10 10–1 10 100 Frequency [MHz] 0.8 101 1.0 1.2 1.4 RF C [V] 1.6 1.8 TE Characteristics Graphs (Pin 13) Frequency response VCA characteristics 30 25 TE C = 1 VC 2 28 26 H/L, L/H, H/H 24 Gv [dB] Gain [dB] 20 L/L 15 22 20 18 16 14 12 10 100 10 101 102 Frequency [kHz] 103 FE frequency response (Pin 15) 0.4 0.6 0.8 1.0 1.2 1.4 TE C [V] 1.6 1.8 2.0 CE frequency response (Pin 11) Frequency response Frequency response 25 20 20 Gain [dB] Gain [dB] 25 15 10 100 15 101 102 Frequency [kHz] 10 100 103 – 20 – 101 102 Frequency [kHz] 103 CXA2555Q MIRROR Characteristics Graph (Pin 19) Maximum operating frequency vs. MIRR T pin voltage 600 Vin = –0.4VDC, 800mVp-p H/L, L/H, or H/H Mode 550 500 fmax [kHz] 450 400 350 300 250 200 150 100 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 MIRR T [V] APC Characteristics Graph (Pin 1) LD voltage vs. PD voltage 5.0 4.5 4.0 LD [V] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 80 100 120 140 PD [mV] – 21 – 160 180 200 CXA2555Q Package Outline Unit: mm 32PIN QFP (PLASTIC) 9.0 ± 0.2 24 0.1 + 0.35 1.5 – 0.15 + 0.3 7.0 – 0.1 17 16 32 9 (8.0) 25 1 + 0.2 0.1 – 0.1 0.8 + 0.15 0.3 – 0.1 ± 0.12 M + 0.1 0.127 – 0.05 0° to 10° PACKAGE MATERIAL EPOXY RESIN SONY CODE QFP-32P-L01 LEAD TREATMENT SOLDER PLATING EIAJ CODE ∗QFP032-P-0707-A LEAD MATERIAL 42 ALLOY PACKAGE WEIGHT 0.2g JEDEC CODE – 22 – 0.50 8