CXA2556Q RF Amplifier for CD Player/CD-ROM For the availability of this product, please contact the sales office. Description The CXA2556Q is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF AC amplifier (RF AC signal fc ≥ 20MHz) • 4-mode RF equalizer (active filter type) • RF equalizer boost amount and cut-off frequency adjustable • EFM time constant adjustable (switching function provided) • Peak hold time constant of mirror circuit adjustable • Tracking error amplifier cut-off frequency adjustable • Tracking error amplifier voltage gain adjustable • APC (Automatic Power Control) function • APC ON/OFF control Absolute Maximum Ratings • Supply voltage VCC • Storage temperature Tstg • Power consumption PD 7 –65 to +150 800 V °C mW 32 pin QFP (Plastic) Applications • CD players • CD-ROM drives Functions • RF summing amplifier • RF equalizer • Focus error amplifier • Tracking error amplifier • Mirror detection function • APC circuit Operating Conditions • Supply voltage VCC – GND 3.0 to 5.5 V • Operating temperature Topr –20 to +75 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96731B76 CXA2556Q RFO RFI SUM OUT EQ IN RF C BST C FC C APC ON Block Diagram 32 31 30 29 28 27 26 25 VCA BOOST FILTER CONTROL CONTROL CONTROL LD 1 LPF DELAY HPF BOOST MODE SW MIXER PD 2 10p C D 10k 1.25V 56k 10k 40k VC 55k 1.3V 51k 19 40k VC 32k 87k MIRR 27p 32k 40k 18 CP 32k 174k VC VCA 8 20 VCC 40k VS 20k 10k GND 32k 73.34k 320k 17 27p 164k TE C 14 15 16 VC TE1 13 FE 12 FE B 11 TE 10 F 2p 9 E NC VCC VC VCC 20k 40k 40k 21 RFO 2 1.25V VCA 7 22k Open only for L/L mode VC 40k GND 80k 80k VCC 40k 6 22 RFO 1 10k 5 1k VC 80k HOLD PEAK /BOT VC APC ON 56k 20k 80k VC 4 23 MODE 2 44p 44k 39k B Vcc VC 18k 3 VCA VCC VS A LPF 24 MODE 1 –2– MIRR T CXA2556Q Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 2 PD I 1 APC amplifier output. 855 55k APC amplifier input. 2 8k 10k 147 40k 3 40k 10k 40k 40k 147 3 4 5 6 A B C D 32k 4 I I I I Input of RF summing amplifier and focus error amplifier. 32k 147 32k 174k 5 164k 147 32k 6 7 Ground. GND 147 147 10 9 9 10 11 12 13 E F TE1 TE C TE I I O I O 147 147 160k 11 13 VCA 36.7k 147 12 –3– Tracking error amplifier input for Pins 9 and 10; tracking error amplifier output for Pin 11; tracking error amplifier lowfrequency gain setting for Pin 12; tracking error amplifier output for Pin 13. CXA2556Q Pin No. 8 Symbol I/O Equivalent circuit Description NC Not connected. 147 14 164k 14 15 FE B FE O O 174k 147 15 120 16 VC O 16 120 Focus bias adjustment for Pin 14; focus error amplifier output for Pin 15. (Vcc + GND)/2 DC voltage output. VCC 17 MIRR T I 147 120k 10k 80k 17 Peak hold time constant adjustment. 10k 1.5k 18 CP Connects a mirror hold capacitor. Non-inverted input of mirror comparator. 80k I 147 18 20k 19 MIRR O 40k 147 19 100k –4– Mirror comparator output. CXA2556Q Pin No. 20 Symbol I/O Equivalent circuit Description Power supply. VCC 3k 147 21 21 22 RFO 2 RFO 1 O O 147 Buffer switch output for the RF time constant setting for Pin 21. ON when Pins 23 and 24 are connected to GND. RF equalizer output. 22 Double-speed mode switching input. 23 MODE 2 147 I 10k 40k 24 25 MODE 1 APC ON I I Mode 1 Mode 2 ×1 GND GND ×N VCC GND × 1.5N GND VCC × 2.0N VCC VCC 23 147 10k 40k 24 N is varied according to the external resistor connected to Pin 26. Switching pin for APC amplifier ON/OFF. OFF when connected to Vcc; ON when connected to GND. 147 25 100k 5k 5k 26 FC C I 5k 147 26 –5– Input to set the RF equalizer LPF cut-off frequency. CXA2556Q Pin No. Symbol I/O Equivalent circuit Description 5k 27 27 BST C I Sets the high-frequency boost amount of RF equalizer. 28 RF C I Sets the low-frequency gain of RF amplifier and RF equalizer. 10k 147 28 430 147 29 EQ IN 29 I RF equalizer input. 2k 10k 10k 30 SUM OUT 20k RF summing amplifier output inversion. O 20k 147 30 39k 31 RFI I Mirror circuit input. The RF summing amplifier output is input. 147 18k 31 44k –6– CXA2556Q Pin No. Symbol 32 RFO I/O Equivalent circuit 15k Description 147 32 O 15k –7– RF signal output. Eye pattern check point. –8– Maximum output amplitude H V2-2 Maximum output amplitude L 18 19 V2-3 F2-2 Frequency response 2 16 15 17 G2-2 Voltage gain 2 F2-1 G2-1 Voltage gain 1 Frequency response 1 V2-1 Offset voltage G2-3 V1-3 Maximum output amplitude L O O DC voltage measurement DC voltage measurement 15 15 O 300mV –3 V1 = 100mVp-p, f = 20kHz Difference for G2-2 15 O — 1.9 –3 V1 = 100mVp-p, f = 20kHz Difference for G2-1 — — — –2.3 –1.7 2.4 — — 2.5 17.5 20.5 23.5 V1 = 100mVp-p f = 1kHz 0 17.5 20.5 23.5 60 V1 = 100mVp-p f = 1kHz 0 –1.6 –0.95 –60 — — — 11.5 –4.5 22 DC voltage measurement DC voltage measurement 15 15 — 19 DC voltage measurement 1.75 2.25 –2.5 300mV 15 0V 15 32 32 –300mV 300mV G2-1 – G2-2 B A C 15 O O O O O O –3 V1 = 100mVp-p, f = 10MHz Difference for G1-1 O O F1-1 Frequency response V1-2 4.5 V1 = 100mVp-p, f = 1kHz Difference for G1-1 32 O O G1-3 VCA gain 2 Maximum output amplitude H 8 V1 = 100mVp-p, f = 100kHz –11.5 Difference for G1-1 32 O O G1-2 VCA gain 1 32 –8 16 V1 = 100mVp-p f = 100kHz 32 V V dB dB dB dB dB mV V V dB dB dB dB mV O 275 O 100 G1-1 mA Voltage gain 46.5 –65 0.3V DC current measurement 0V 32 B V1-1 33 Typ. Max. Unit Offset voltage 21.5 Min. DC current measurement –46.5 –33 –21.5 mA B 0V E3 Description of output waveform and measurement method 7 E2 Measurement point IEE Current consumption E1 Bias conditions DC current measurement ICC Current consumption S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 SW conditions (Ta = 25°C, VCC = 2.5V, GND = Vc, VEE = –2.5V) 20 Symbol Measurement item Voltage gain difference 14 13 12 11 10 9 8 7 6 5 2 1 FE amplifier No. RF amplifier Electrical Characteristics CXA2556Q B O G3-5 F3-1 VCA gain 2 –9– O Maximum output amplitude H V3-2 Maximum output amplitude L V3-3 30 31 O O F3-4 O Frequency response 4 F3-3 O 29 Frequency response 2 F3-2 A O G3-4 VCA gain 1 Frequency response 1 C O G3-3 Voltage gain difference O G3-2 Voltage gain 2 O G3-1 Voltage gain 1 B V3-1 Offset voltage B O O O O S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 SW conditions Symbol Measurement item Frequency response 3 TE amplifier 28 27 26 25 24 23 22 21 20 No. 0.3V 0V 300mV 300mV E2 E1 Bias conditions 0V E3 V1 = 100mVp-p, f = 1kHz 23.9 26.9 29.9 –3 –3 –3 V1 = 100mVp-p, f = 20kHz Difference for G3-1 V1 = 100mVp-p, f = 20kHz Difference for G3-2 V1 = 100mVp-p, f = 180kHz Difference for G3-1 V1 = 100mVp-p, f = 180kHz Difference for G3-2 13 13 13 13 13 13 13 DC voltage measurement DC voltage measurement dB V1 = 100mVp-p, f = 1kHz 11.9 14.9 17.9 –3 G3-1 – G3-2 13 13 dB — V1 = 100mVp-p f = 1kHz 13 — 1.9 –2.0 — — — — — — 2.0 — — –2.2 –1.7 2.4 — — — — 0 20.9 20.9 V V dB dB dB dB dB dB dB mV V1 = 100mVp-p f = 1kHz 150 13 30 –60 DC voltage measurement 13 Min. Typ. Max. Unit Description of output waveform and measurement method Measurement point CXA2556Q – 10 – O O O V5-2 F5-1 F5-4 V5-3 V5-4 Mirror hold frequency response Bottom hold frequency response F5-2 F5-3 Low level output voltage Maximum operating frequency 1 Maximum operating frequency 2 Minimum input voltage Maximum input voltage 50 51 52 49 48 47 46 45 O O O O O V5-1 High level output voltage O VN Output noise 43 O O V4-4 O Maximum output amplitude L 42 41 V4-3 O O Maximum output amplitude H O O F4-4 O O F4-3 Frequency response 3 O O O O O F4-2 O B A O O O O F4-1 Frequency response 1 O O O O G4-3 Boost gain Frequency response 2 O G4-2 VCA gain 1 O 22 O –400mV –400mV –400mV –400mV –400mV –200mV –400mV –400mV 0V –300mV 300mV 0V 1.0V 19 19 19 19 19 19 19 19 22 22 22 22 22 22 22 22 22 22 O 0V G4-1 0.3V Voltage gain 1 0V 21 B V4-2 E3 Offset voltage B E2 Measurement point V4-1 E1 Bias conditions Offset voltage S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 SW conditions Symbol Measurement item Frequency response 4 40 39 38 37 36 35 34 33 32 Equalizer MIRR No. 1.5 –3 –3 –3 V1 = 100mVp-p, f = 2MHz Difference for G4-1 V1 = 100mVp-p, f = 1MHz Difference for G1-1 V1 = 100mVp-p, f = 10MHz Difference for G4-1 V1 = 100mVp-p, f = 15MHz Difference for G4-1 f (V1) = 10kHz f (V1) = 10kHz V1 = 800mVp-p V1 = 800mVp-p V1 = 800mVp-p V1 = 0.8Vp-p, 55% AM Mod. V1 = 0.8Vp-p, f = 10kHz V1 = 0.8Vp-p, f = 10kHz HPF = 400Hz, LPF = 200kHz V4-1 – V4-4 V4-3 – V4-1 — 0.35 250 40 — — — 1.8 — 0.45 1.15 — — — — 4 8 — — — — 550 400 — — — 0.9 1.8 — — — 900 600 –2.2 — 6 — — — — — — 6.5 10.5 22.5 26.5 0.8 0.45 0.85 –3 4.5 V1 = 25mVp-p, f = 100kHz Difference for G4-1 V1 = 100mVp-p, f = 20MHz Difference for G4-1 17 0.25 0.25 0.75 1.15 Vp-p Vp-p kHz kHz Hz Hz V V mV V V dB dB dB dB dB dB dB V V Min. Typ. Max. Unit V1 = 25mVp-p, f = 100kHz Description of output waveform and measurement method CXA2556Q 58 57 56 55 54 53 APC VC No. VC 1 0V V6-5 Output voltage 5 Output voltage 1 0V V6-4 Output voltage 4 O 1 177mV V6-3 0.3V 16 1 Output voltage 3 0V 69mV 1 0V 123mV B V6-2 B E3 E2 Output voltage 2 Measurement point V6-1 E1 Bias conditions Output voltage 1 S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 SW conditions Symbol Measurement item –0.1 — I1 = 0.8mADC DC voltage measurement 0.3 1.8 DC voltage measurement –1.6 –0.9 0 –0.9 2.4 1.6 0.1 0 — — –1.2 –0.35 1.4 — V V V V V V Min. Typ. Max. Unit DC voltage measurement DC voltage measurement DC voltage measurement DC voltage measurement Description of output waveform and measurement method CXA2556Q – 11 – CXA2556Q Electrical Characteristics Measurement Circuit 20k 20k VCC 2k B A S9 VCC C 20k 5.1k VCC S13 10k S8 5.1k S7 30 29 28 27 26 25 RFI SUM OUT EQ IN RF C BST C FC C APC ON S10 31 RFO VEE 32 I1 1 VCC LD E2 VEE 2 MODE 1 S12 VCC S11 VEE VCC 24 MODE 2 23 PD 3 A RFO 1 22 4 B RFO 2 21 5 C VCC 20 6 D MIRR 19 7 GND 8 NC VEE 1µ 10k 1µ 10k S1 S2 VCC 0.033µ VEE CP 18 E3 E F TE1 TE C TE FE B FE VC MIRR T 17 9 10 11 12 13 14 15 16 VCC S3 10k S4 V1 E1 44k 112k 112k A 44k S6 C B 20k – 12 – 10k 33µ 33µ VEE 20k 10k VEE CXA2556Q Application Circuit LD ON VCC 100µ/6.3V 10 47k VC 0.1µ GND 3.9k 0.1µ 6.8k 31 30 29 28 27 26 RFI SUM OUT EQ IN RF C BST C FC C 25 APC ON 32 RFO 10µH 1µ/6.3V 24 Mode 1 IN MODE 2 23 Mode 2 IN 1 LD 2 PD A IN 3 A RFO 1 22 B IN 4 B RFO 2 21 MODE 1 500 100 1000p 4700p RF AC Out VCC 33µ C IN 5 C VCC 20 D IN 6 D MIRR 19 7 GND 8 NC VC 0.1µ Mirror Out 0.1µ 33µ CP 18 VC F TE1 TE C TE FE B FE VC MIRR T 17 E 0.1µ 9 10 11 12 13 14 15 16 10k VC 120k E IN VC 47k ∗ 3p 10k Tracking Error Out 47k F IN VC Focus Error Out 62k 100k ∗ Depending on actual applications an additional capacitor of 3pF may be added at pin (6). The purpose is to extend the cut-off frequency of TE to beyond 250kHz. Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. – 13 – CXA2556Q Description of Functions RF Block The RF signal processing is performed by this circuit. The output is separated to AC and DC. The AC is the capacitance-coupled input via the equalizer circuit and used for the EFM demodulation signal processing. The DC contains the DC component and is used for the mirror, defect and FOK signal processings. The VCA function is provided for both the AC and DC signal processing systems. Pin 28 is the control voltage input pin. (See the characteristics graphs on page 19 and page 20 for the gain and control voltage.) RF Equalizer Block Diagram is as shown below: EQ IN LPF1 DELAY FC C MIXER HPF Boost FC C BST C LPF2 LPF3 LPF4 VCA FC C FC C FC C RF C EQ OUT RF Equalizer The equalizer function is provided for the AC signal processing system for the EFM signal demodulation. The each filter is constructed in the Bessel type which has the little group delay difference. The cut-off frequency and boost amount can be set by the external resistors connected to Pins 26 and 27. (See the characteristics graphs on page 19 for the cut-off frequency and boost amount.) The transmittance for each filter is as follows: HPF: (KS2) / (S2 + 3.22597S + 2.94933) LPF1: (2.94933 ) / (S2 + 3.22597S + 2.94933) LPF2: (3.32507 ) / (S2 + 2.75939S + 3.32507) LPF3: (4.20534 ) / (S2 + 1.82061S + 4.20534) LPF4: (1.68536 ) / (S + 1.68536) – 14 – CXA2556Q RF Amplifier The signal currents from the photodiodes A, B, C and D are I-V converted and input to Pins 3, 4, 5 and 6. These signals are added by the RF summing amplifier, inverted by the RF drive amplifier and output to Pin 32. The VCA control voltage on Pin 28 is used for the gain adjustment. 47k Vc SUM OUT A I-V B I-V C 40k 3 4 I-V D 6 I-V RF C RFO 32 10k 40k 40k 5 28 30 40k VCA Vc RF Summing Amp The low frequency component of the RFO output voltage is as follows: VRFO = 2.45 × (A + B + C + D) (RFC voltage = 1/2 VC) Focus Error Amplifier The operation of (B + D) – (A + C) is performed and the resulting signal is output to Pin 15. 27p 174k A I-V I-V I-V I-V B C D 32k 3 4 15 FE 32k Focus Error Amp 32k 5 6 32k 164k 27p 87k Vc 14 FE B VCC 47k The low frequency component of the FE output voltage is as follows: VFE = 174k × (B + D – A – C) 32k = 5.43 × (B + D – A – C) – 15 – CXA2556Q Tracking Error Amplifier The signal current from the photodiode F is I-V converted and input to Pin 10 via the input resistor. The signal current from the photodiode E is I-V converted and input to Pin 9 after its gain is adjusted by the volume. These signals undergo operational amplification at the tracking error amplifier, VCA and tracking drive amplifier and they are output to Pin 13. 14p Vc 2p 62k 320k 100k I-V E 44k F 73.4k 9 VCA Vc 10 I-V 112k TE1 11 12 TE C Vc 47k The low frequency component of the TE output voltage is as follows: VTE = 112k 320k × × (F – E) 44k 73.4k = 11.1 × (F – E) (TE C voltage = 1/2 VC) – 16 – TE 13 CXA2556Q Mirror Circuit The mirror circuit performs peak and bottom hold after RFI signal has been amplified. The peak hold is executed with the time constant which follows the traverse signal of 100kHz for L/L mode (either of Pins 23 or 24 is connected to GND) and maximum 700kHz (adjustable with the DC voltage on Pin 17) for L/H, H/L, H/H modes. The bottom hold is executed with the time constant which follows the rotation cycle envelope fluctuation. Mirr Hold Amp 3.125V Vc 44k RFI 39k 80k 18k H G 31 Vc I Mirr Amp Mode L/L Vc RFO Peak & Bottom Hold 18 CP 80k K J 80k 80k Mirr Dif Amp Vc 0.33µ Mirr 20k Comparator 1.3V AAAAAA AAA AA AAAAAA AAA AA AAAAAA AAA AA AAAAAA AAA AA AAAAAA AAA AA AAAAAAAAA 19 17 MIRR T RFO G (RFI) H (PEAK HOLD) MIRR 0V 0V 0V I (BOTTOM HOLD) 0V J K (MIRROR HOLD) H MIRR L The mirror signal is output by comparing to the signal K (2/3 level of the J peak value which is peak-held with a large time constant) where the difference of hold signals H and I is obtained. The mirror output is low for tracks on the disc and high for the area between tracks (the mirror areas). In addition, a high signal is output when a defect is detected. The mirror hold time constant must be sufficiently large in comparison with the traverse signal. – 17 – CXA2556Q Center Voltage Generation Circuit The center voltage of VR = (Vcc + GND)/2 is supplied. The maximum current is approximately ±3mA. VCC VCC 40k Vc Buffer 25 VR Vc 16 40k APC Circuit When the laser diode is driven by a constant current, the optical power output has extremely large negative temperature characteristics. The APC circuit is used to maintain the optical power output at a constant level. The laser diode current is controlled according to the monitor photodiode output. APC is ON by connecting APC_ON pin to GND; it is OFF by connecting the pin to Vcc. VCC PD 56k 8k 100µ 10k 2 1k 1 10k 55k 10 LD 56k 10µ 100 10k 1.25V 500 1µ – 18 – CXA2556Q RF AC Characteristics Graphs (Pin 22) Frequency response Boost gain characteristics 28 8 1 VC 2 Rbst = 3.9kΩ L/H RF C = 26 6 Rfc = 6.8kΩ L/L H/L 5 Boost [dB] Gain [dB] Rfc =6.8kΩ, 1 RF C = VC 2 7 H/H 24 4 3 2 22 1 0 20 10–1 –1 100 Frequency [MHz] 5 0 101 Cut-off frequency Rbst = 0Ω, RF C = 20 35 1 VC 2 H/H Mode 30 Gv [dB] Fc [MHz] 15 VCA characteristics 25 20 10 Rbst [kΩ] 15 10 25 20 15 5 10 4 6 8 10 12 14 Rfc [kΩ] 16 18 20 0.8 1.0 1.2 1.4 RF C [V] 1.6 1.8 Notes) In the graphs above, Rfc: FC C (pin 26) external resistor value Rbst: BST C (pin 27) external resistor value ∗ To ensure stable operation, it is recommended to select Rfc value of 6.2kΩ and above, and Rbst of 10kΩ and below in all cases. – 19 – CXA2556Q RF DC Characteristics Graphs (Pin 32) Frequency response VCA characteristics 25 30 RF C = 1 VC 2 28 26 24 Gv [dB] Gain [dB] 20 15 22 20 18 16 14 12 10 10–1 10 100 Frequency [MHz] 0.8 101 1.0 1.2 1.4 RF C [V] 1.6 1.8 TE Characteristics Graphs (Pin 13) Frequency response VCA characteristics 30 25 TE C = 1 VC 2 28 26 H/L, L/H, H/H 24 Gv [dB] Gain [dB] 20 L/L 15 22 20 18 16 14 12 10 100 10 101 102 Frequency [kHz] 103 0.4 FE frequency response (Pin 15) Frequency response 25 Gain [dB] 20 15 10 100 101 102 Frequency [kHz] 103 – 20 – 0.6 0.8 1.0 1.2 1.4 TE C [V] 1.6 1.8 2.0 CXA2556Q MIRROR Characteristics Graph (Pin 19) Maximum operating frequency vs. MIRR T pin voltage 600 Vin = –0.4VDC, 800mVp-p H/L, L/H, or H/H Mode 550 500 fmax [kHz] 450 400 350 300 250 200 150 100 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 MIRR T [V] APC Characteristics Graph (Pin 1) LD voltage vs. PD voltage 5.0 4.5 4.0 LD [V] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 80 100 120 140 PD [mV] – 21 – 160 180 200 CXA2556Q Package Outline Unit: mm 32PIN QFP (PLASTIC) 9.0 ± 0.2 24 0.1 + 0.35 1.5 – 0.15 + 0.3 7.0 – 0.1 17 16 32 9 (8.0) 25 1 + 0.2 0.1 – 0.1 0.8 + 0.15 0.3 – 0.1 ± 0.12 M + 0.1 0.127 – 0.05 0° to 10° PACKAGE MATERIAL EPOXY RESIN SONY CODE QFP-32P-L01 LEAD TREATMENT SOLDER PLATING EIAJ CODE ∗QFP032-P-0707-A LEAD MATERIAL 42 ALLOY PACKAGE WEIGHT 0.2g JEDEC CODE – 22 – 0.50 8