Product Description SNA-276 Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-200), its small size (0.33mm x 0.33mm) and gold metallization, make it an ideal choice for use in hybrid circuits. The SNA-276 is available in tape and reel at 1000, 3000 and 5000 devices per reel. Output Power vs. Frequency 16 15 14 Applications • Narrow and Broadband Linear Amplifiers • Commercial and Industrial Applications 13 12 0.5 1 1.5 2 4 6 8 10 GHz Electrical Specifications at Ta = 25°° C S ym bol G P G F BW 3dB P P a r a m e te r s : T e s t C o n d it io n s : Id = 5 0 m A , Z 0 = 5 0 O h m s S m a ll S ig n a l P o w e r G a in f = 0 .1 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 4 .0 -6 .5 G H z G a in F la tn e s s f = 0 .1 -4 .0 G H z 3 d B B a n d w id th U n its M in . Ty p . dB dB dB 1 5 .0 1 4 .0 1 3 .0 1 6 .0 1 5 .0 1 4 .0 dB + /1 .0 GHz 6 .5 1 4 .0 O u tp u t P o w e r a t 1 d B C o m p re s s io n f = 2 .0 G H z dBm NF N o is e F ig u r e f = 2 .0 G H z dB 5 .5 VSW R In p u t/O u tp u t f = 0 .1 -6 .5 G H z - 1 .5 :1 T h ir d O r d e r I n t e r c e p t P o i n t f = 2 .0 G H z dBm 2 7 .0 G ro u p D e la y f = 2 .0 G H z psec 100 R e v e r s e Is o l a t i o n f = 0 .1 -6 .5 G H z 1dB IP T 3 6 .0 D IS O L V M ax. D D e v ic e V o lta g e dB V 20 3 .5 4 .0 d G /d T D e v i c e G a i n T e m p e r a tu r e C o e ff i c i e n t d B /d e g C -0 .0 0 1 8 d V /d T D e v i c e V o l t a g e Te m p e r a t u r e C o e f fi c i e n t m V /d e g C -4 .0 4 .5 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5-25 http://www.stanfordmicro.com 50 Ohm Gain Blocks dBm Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB • 1.5:1 Input and Output VSWR • Operates From Single Supply • Low Cost Stripline Mount Ceramic Package • Hermetically Sealed SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier |S11| vs. Frequency |S21| vs. Frequency 18 0 17 -5 -10 dB 16 dB -15 -20 15 14 -25 13 -30 0.1 0.5 1 1.5 2 3 4 12 6 0.1 0.5 1 1.5 GHz 2 4 6 GHz |S22| vs. Frequency |S12| vs. Frequency 0 0 -5 -5 -10 dB dB -15 -10 -15 -20 -25 -20 0.1 0.5 1 1.5 2 4 6 8 10 0.1 0.5 1 1.5 50 Ohm Gain Blocks GHz 2 4 6 8 10 8 10 GHz Noise Figure vs. Frequency TOIP vs. Frequency 8 28 7.5 27 7 dB dBm 6.5 6 26 25 5.5 24 5 0.1 0.5 1 1.5 2 4 6 8 0.1 10 0.5 1 1.5 2 4 6 GHz GHz Typical S-Parameters Vds = 4.0V, Ids = 50mA F re q G H z |S 11 | S 11 A n g |S 2 1 | S21 Ang |S 1 2 | S12 Ang |S 2 2 | S22 Ang .1 0 0 0 .11 4 157 6 .8 8 5 166 0 .0 8 2 -7 0 .0 8 3 145 .2 5 0 0 .1 4 5 135 6 .7 8 5 142 0 .0 9 8 -1 4 0 .0 9 5 126 .5 0 0 0 .1 5 2 11 4 6 .6 5 9 139 0 .1 0 6 -2 8 0 .11 7 11 5 1 .0 0 0 .1 7 1 57 6 .4 6 7 101 0 .1 0 6 -5 3 0 .1 4 1 62 1 .5 0 0 .1 8 2 1 6 .2 5 9 60 0 .1 0 6 -8 3 0 .1 6 6 5 2 .0 0 0 .1 7 0 -5 0 6 .1 0 3 22 0 .1 0 8 -1 0 9 0 .1 7 3 -4 6 4 .0 0 0 .0 8 7 38 5 .1 3 0 -1 3 2 0 .11 4 132 0 .1 4 6 73 6 .0 0 0 .1 3 0 -7 6 4 .1 0 7 81 0 .111 12 0 .2 6 0 -1 0 8 8 .0 0 0 .2 0 8 -1 3 2 3 .6 8 8 -7 2 0 .1 0 8 -11 9 0 .1 0 3 -2 2 0 .3 9 1 -1 4 9 2 .9 6 2 11 8 0 .0 8 1 99 0 .3 4 6 177 1 0 .0 0 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5-26 http://www.stanfordmicro.com SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier Absolute Maximum Ratings Part Number Ordering Information A b s o lu te M a xim u m P a r a m ete r D e vic e C urre nt Part Number Devices Per Reel SNA-276-TR1 1000 Reel Size 7" SNA-276-TR2 3000 13" SNA-276-TR3 5000 13" 70mA Po w e r D issipa tion 3 2 0m W R F In p ut Po w er 1 0 0m W Ju n ction Te m p e ra ture +2 0 0 C O p e ra tin g Te m p e ra tu re -4 5 C to +8 5 C Sto ra g e Te m pe ra tu re -6 5 C to +1 5 0 C R e c o m m e n d e d B ia s R e s is to r Va lu e s Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. Supply Voltage(Vs) 5V 7.5V 9V 12V 15V 20V R bias (O hm s) 20 70 100 160 220 320 MTTF vs. Temperature @ Id = 50mA Lead Temperature Junction Temperature MTTF (hrs) +45C +155C 1000000 +80C +190C 100000 +110C +220C 10000 50 Ohm Gain Blocks Thermal Resistance (Lead-Junction): 556° C/W Typical Biasing Configuration Pin Designation 1 RF in 2 GND 3 RF out and Bias 4 GND Typical Performance at 25° C Power Gain vs. Device Current Device Voltage vs. Id 17 5 16 dB 4.5 60mA 15 Vd 50mA 14 4 40mA 3.5 30mA 13 25mA 3 12 0.2 0.5 1.0 1.25 1.5 1.75 25 2.0 522 Almanor Ave., Sunnyvale, CA 94086 30 40 50 60 70 80 mA GHz Phone: (800) SMI-MMIC 5-27 http://www.stanfordmicro.com