Product Description SHF-0198 Stanford Microdevices’ SHF-0198 series is a high performance AlGaAs/GaAs Heterostructure FET housed in a low-cost stripline-mount ceramic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and improved linearity. DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET Output power at 1dB compression for the SHF-0198 is +27dBm when biased for Class A operation at 9V and 150mA. This HFET is also characterized at 5V for lower voltage applications. This device can be used in both analog and digital wireless communication infrastructure and subscriber equipment including cellular, PCS, CDPD, wireless data and pagers. Product Features • Patented AIGaAs/GaAs Heterostructure FET Technology Output Power vs. Frequency 30 Class A 28 • 17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHz dBm 26 Applications • AMPS, PCS Basestations • VSAT 24 DC 2 4 6 8 10 12 GHz Electrical Specifications at Ta = 25C S y m b o l G p P 1 d B IP 3 N F o p t Id s s P a r a m e te r s : T e s t C o n d itio n s U n its M in . Ty p . f = f = f = 0 .9 G H z 1 .9 G H z 2 .5 G H z d B d B d B 1 5 1 2 1 7 1 4 1 2 C o m p r e s s io n f = f = f = 0 .9 G H z 1 .9 G H z 2 .5 G H z d B d B d B + 2 6 .5 + 2 6 .3 + 2 7 .5 + 2 7 .3 + 2 7 .0 O u tp u t T h ir d O r d e r I n te r c e p t P o in t f = f = f = 0 .9 G H z 1 .9 G H z 2 .5 G H z d B d B d B + 3 8 + 3 8 + 3 7 N o is e F ig u r e f = f = f = 0 .9 G H z 1 .9 G H z 2 .5 G H z d B d B d B 1 .8 2 .2 2 .5 m A 3 0 0 P o w e r G a in O u tp u t P o s e r a t 1 d B S a tu ra te d V g s = 0 V D r a in C u r r e n t: V d s = 3 V , G m T ra n s c o n d u c ta n c e : V d s = 3 V , V g s = 0 V m S 1 7 5 V p P in c h - o ff V o lta g e : V d s = 3 V , Id s = 1 m A V -2 .2 M a x . V b g s G a te - to - S o u r c e B r e a k d o w n V o lta g e V -2 0 -1 2 V b g d G a t e - t o - D r a in V -2 0 -1 2 B r e a k d o w n V o lt a g e The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3-21 http://www.stanfordmicro.com High Power GaAs FETs • +27dBm Output Power at 1dB Compression • +38 dBm Output IP3 • High Power Added Efficiency - up to 40% at SHF-0198 DC-12 GHz 0.5 Watt HFET Typical Performance at 25° C (Vds = 9V, Ids = 150mA) |S21| and MAG vs. Frequency |S11| vs. Frequency 0 -5 dB dB -10 -15 -20 DC 2 4 6 8 10 30 25 20 15 10 5 0 M AG S21 DC 12 2 4 6 8 12 10 12 |S22| vs. Frequency |S12| vs. Frequency 0 0 -5 -20 High Power GaAs FETs 10 GHz GHz dB dB -40 -10 -15 -20 -60 DC 2 4 6 8 10 0 12 2 4 6 8 GHz GHz TOIP vs. Frequency 39 38 dBm 37 36 35 34 0 2 4 6 8 10 12 GHz Typical S-Parameters Vds = 9.0V, Id = 150mA Freq G H z |S 1 1 | S 11 A ng |S 2 1 | S21 A ng |S 1 2 | S12 A ng |S 2 2 | .1 0 0 0 .8 9 1 -1 2 1 1 .8 2 177 .0 0 5 89 .5 3 9 S22 A ng -4 .5 0 0 0 .9 2 8 -6 4 1 0 .8 4 150 .0 2 3 70 .5 2 9 -2 7 1 .0 0 0 .8 8 8 -9 7 9 .4 4 122 .0 3 7 63 .4 7 7 -4 8 2 .0 0 0 .8 0 4 -1 3 8 7 .9 4 97 .0 4 3 47 .4 6 8 -7 4 3 .0 0 0 .8 1 3 -1 6 7 5 .6 9 70 .0 4 9 44 .4 9 3 -1 0 3 4 .0 0 0 .8 0 4 172 3 .9 8 52 .0 5 3 60 .5 3 1 -1 2 3 5 .0 0 0 .8 4 6 155 2 .7 6 35 .0 7 4 65 .6 0 3 -1 4 5 6 .0 0 0 .9 1 4 137 2 .0 2 20 .0 9 2 69 .6 7 0 -1 5 9 7 .0 0 0 .9 1 7 11 9 1 .6 6 -1 .1 3 7 58 .8 2 2 147 8 .0 0 0 .9 2 6 101 1 .4 5 -4 .1 1 5 60 .8 0 2 148 9 .0 0 0 .9 6 7 87 1 .3 7 -11 .2 0 5 56 .9 4 2 132 1 0 .0 0 0 .9 7 0 65 1 .3 3 -3 4 .1 6 7 41 .9 4 7 100 1 1 .0 0 0 .9 3 7 54 1 .3 8 -3 1 .1 8 6 42 .9 5 2 89 1 2 .0 0 0 .9 0 6 21 1 .3 3 -3 8 .2 0 7 39 .8 7 9 51 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3-22 http://www.stanfordmicro.com SHF-0198 DC-12 GHz 0.5 Watt HFET Absolute Maximum Ratings Parameter Symbol Part Number Ordering Information Absolute Maximum Drain to Source Voltage VDS Gate to Source Voltage VGS -5V Drain Current IDS IDSS 100 mW Part Number Devices Per Tray SHF-0198 100 +10V RF Input Power PIN Channel Temperature TCH 175 C Storage Temperature TSTG -65 to +175 C Thermal Resistance, JunctionGround Lead RIN 36 degC/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Mounting Surface Temperature = 25° C Pin Designation 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3-23 1 Gate 2 Source 3 Drain http://www.stanfordmicro.com High Power GaAs FETs Outline Drawing