Preliminary Preliminary Product Description SNA-586 Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.5 dBm. DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier NGA-586 Recommended for New Designs These unconditionally stable amplifiers provide 18 dB of gain and 18.4 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET. Product Features • High Output IP3: 32.5 dBm @ 850 MHz • Cascadable 50 Ohm Gain Block • Patented GaAs HBT Technology • Operates From Single Supply Small Signal Gain vs. Frequency @ ID=65mA 25 20 dB 15 10 5 0 2 4 Frequency GHz 6 8 Applications • Cellular, PCS, CDPD, Wireless Data, SONET Electrical Specifications Symbol Parameters: Test Conditions: Z0 = 50 Ohms, ID = 65GHz mA, T = 25°C P1dB Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm 17.6 18.4 18.4 IP3 Third Order Intercept Point Power out per tone = 0 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm 32.5 31.6 31.6 S21 Small Signal Gain f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB Bandwidth Units (Determined by S11, S22 Values) Min. 17.6 Typ. 19.6 18.1 17.4 MHz 5000 S11 Input VSWR f = DC-5000 MHz - 1.4:1 S22 Output VSWR f = DC-5000 MHz - 1.4:1 S12 Reverse Isolation f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 22.3 21.6 21.3 NF Noise Figure, ZS = 50 Ohms f = 1950 MHz dB 4.0 VD Device Voltage Rth,j-l V Thermal Resistance (junction - lead) o C/W 4.4 Max. 4.9 5.4 254 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101397 Rev A Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Supply Current Operating Temperature Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l Maximum Input Pow er Storage Temperature Range Operating Junction Temperature Typical Parameter 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation Value Unit 110 mA -40 to +85 C 16 dBm -40 to +150 C +175 C Test Condition 25°C Unit 19.8 3.9 31.8 17.4 14.1 22.5 dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB 19.6 4.0 32.5 17.6 15.6 22.3 dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB 18.1 4.0 31.6 18.4 16.6 21.6 dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB 17.4 31.6 18.4 16.8 21.3 dB dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dBm dB dB (ID = 65 mA, unless otherwise noted) *NOTE: While the SNA-586 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85°C ambient temperature. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101397 Rev A Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier Junction Temp vs. Dissipated Power MTTF vs. Dissipated Power 1.E+08 85C lead temp 1.E+07 180 MTTF (hrs) Junction Temperature (°C) 200 1.E+06 160 1.E+05 85C lead temp 140 1.E+04 0.25 0.35 0.45 Pdiss (W) 0.25 Output IP3 vs. ID vs. Frequency 40 0.35 0.45 Pdiss (W) Output P1dB vs. ID vs. Frequency 21 65m A 80m A 65m A 80m A 19 35 dBm dBm 17 30 15 13 25 0.5 1.5 GHz 2.5 0.5 3.5 NF vs. ID vs. Frequency 4.5 4.25 GHz 2.5 65mA 80mA 19 dB dB 4 3.5 Small Signal Gain vs. ID vs. Frequency 20 65m A 80m A 1.5 18 17 3.75 16 3.5 15 0.5 1 GHz 1.5 522 Almanor Ave., Sunnyvale, CA 94085 2 0.5 Phone: (800) SMI-MMIC 3 1.5 GHz 2.5 3.5 http://www.stanfordmicro.com EDS-101397 Rev A Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Description 2 GND Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. 3 RF OUT/Vcc 4 GND RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. Same as Pin 2. Application Schematic for Operation at 850 MHz Recommended Bias Resistor Values Supply Voltage(Vs) 8V 9V 12V 15V Rbias (Ohms) @ 65 mA 47 62 110 160 Rbias (Ohms) @ 80 mA 39 51 91 130 1uF 68pF Rbias VS 33nH 50 ohm microstrip 50 ohm microstrip 2 1 3 100pF 100pF 4 Application Schematic for Operation at 1950 MHz 1uF 22pF Rbias VS 22nH 50 ohm microstrip 50 ohm microstrip 2 1 3 68pF 522 Almanor Ave., Sunnyvale, CA 94085 4 Phone: (800) SMI-MMIC 4 68pF http://www.stanfordmicro.com EDS-101397 Rev A Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier S21, ID=65mA, T=25°C 25 S12, ID=65mA, T=25°C -10 20 -15 dB dB 15 -20 10 5 -25 0 2 4 6 8 0 Frequency GHz 6 8 S22, ID=65mA, T=25°C 0 -5 -5 dB 4 Frequency GHz S11, ID=65mA, T=25°C 0 2 -10 dB -10 -15 -15 -20 -20 -25 -25 0 2 4 Frequency GHz 6 8 0 4 6 8 Frequency GHz S22, ID=65mA, Ta=25°C S11, ID=65mA, Ta=25°C Freq. Min = 0.05 GHz Freq. Max = 10 GHz Freq. Min = 0.05 GHz Freq. Max = 10 GHz F = 10 GHz F = 10 GHz 522 Almanor Ave., Sunnyvale, CA 94085 2 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101397 Rev A Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier VS Part Number Ordering Information Rbias Cbypass Cblock Cblock Part Number Reel Size Devices/Reel SNA-586 7" 1000 Caution ESD Sensitive: Lchoke Appropriate precautions in handling, packaging and testing devices must be observed. IN OUT Part Symbolization The part will be symbolized with an “S5” designator on the top surface of the package. STANFORD MICRODEVICES ECB-100330 Rev B SOT-86 Eval Board Evaluation Board Layout PCB Pad Layout S5 Package Dimensions S5 Dimensions are in inches [mm] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101397 Rev A