ETC SNA-586

Preliminary
Preliminary
Product Description
SNA-586
Stanford Microdevices’ SNA-586 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband performance
up to 5 GHz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression of
intermodulation products. Typical IP3 at 850 MHz with 65mA is
32.5 dBm.
DC-5 GHz, Cascadable
GaAs HBT MMIC Amplifier
NGA-586 Recommended for New Designs
These unconditionally stable amplifiers provide 18 dB of gain and
18.4 dBm of 1dB compressed power and require only a single
positive voltage supply. Only 2 DC-blocking capacitors, a bias
resistor and an optional inductor are needed for operation. This
MMIC is an ideal choice for wireless applications such as
cellular, PCS, CDPD, wireless data and SONET.
Product Features
• High Output IP3: 32.5 dBm @ 850 MHz
• Cascadable 50 Ohm Gain Block
• Patented GaAs HBT Technology
• Operates From Single Supply
Small Signal Gain vs. Frequency @ ID=65mA
25
20
dB
15
10
5
0
2
4
Frequency GHz
6
8
Applications
• Cellular, PCS, CDPD, Wireless Data, SONET
Electrical Specifications
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, ID = 65GHz
mA, T = 25°C
P1dB
Output Power at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
17.6
18.4
18.4
IP3
Third Order Intercept Point
Power out per tone = 0 dBm
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
32.5
31.6
31.6
S21
Small Signal Gain
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dB
dB
dB
Bandwidth
Units
(Determined by S11, S22 Values)
Min.
17.6
Typ.
19.6
18.1
17.4
MHz
5000
S11
Input VSWR
f = DC-5000 MHz
-
1.4:1
S22
Output VSWR
f = DC-5000 MHz
-
1.4:1
S12
Reverse Isolation
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dB
dB
dB
22.3
21.6
21.3
NF
Noise Figure, ZS = 50 Ohms
f = 1950 MHz
dB
4.0
VD
Device Voltage
Rth,j-l
V
Thermal Resistance (junction - lead)
o
C/W
4.4
Max.
4.9
5.4
254
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary
Preliminary
SNA-586 DC-5GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Operation of this device above any one of these parameters
may cause permanent damage.
Parameter
Supply Current
Operating Temperature
Bias Conditions should also satisfy the following expression:
IDVD (max) < (TJ - TOP)/Rth, j-l
Maximum Input Pow er
Storage Temperature Range
Operating Junction Temperature
Typical
Parameter
500 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
Value
Unit
110
mA
-40 to +85
C
16
dBm
-40 to +150
C
+175
C
Test Condition
25°C
Unit
19.8
3.9
31.8
17.4
14.1
22.5
dB
dB ZS = 50 Ohms
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dBm
dB
dB
19.6
4.0
32.5
17.6
15.6
22.3
dB
dB ZS = 50 Ohms
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dBm
dB
dB
18.1
4.0
31.6
18.4
16.6
21.6
dB
dB ZS = 50 Ohms
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dBm
dB
dB
17.4
31.6
18.4
16.8
21.3
dB
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dBm
dB
dB
(ID = 65 mA, unless otherwise noted)
*NOTE: While the SNA-586 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF
is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85°C ambient
temperature.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary
Preliminary
SNA-586 DC-5GHz Cascadable MMIC Amplifier
Junction Temp vs. Dissipated Power
MTTF vs. Dissipated Power
1.E+08
85C lead temp
1.E+07
180
MTTF (hrs)
Junction Temperature (°C)
200
1.E+06
160
1.E+05
85C lead temp
140
1.E+04
0.25
0.35
0.45
Pdiss (W)
0.25
Output IP3 vs. ID vs. Frequency
40
0.35
0.45
Pdiss (W)
Output P1dB vs. ID vs. Frequency
21
65m A
80m A
65m A
80m A
19
35
dBm
dBm
17
30
15
13
25
0.5
1.5
GHz
2.5
0.5
3.5
NF vs. ID vs. Frequency
4.5
4.25
GHz
2.5
65mA
80mA
19
dB
dB 4
3.5
Small Signal Gain vs. ID vs. Frequency
20
65m A
80m A
1.5
18
17
3.75
16
3.5
15
0.5
1
GHz
1.5
522 Almanor Ave., Sunnyvale, CA 94085
2
0.5
Phone: (800) SMI-MMIC
3
1.5
GHz
2.5
3.5
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary
Preliminary
SNA-586 DC-5GHz Cascadable MMIC Amplifier
Pin #
Function
1
RF IN
RF input pin. This pin requires the use of an external DC blocking capacitor
chosen for the frequency of operation.
Description
2
GND
Connection to ground. Use via holes for best performance to reduce lead
inductance. Place vias as close to ground leads as possible.
3
RF OUT/Vcc
4
GND
RF output and bias pin. Bias should be supplied to this pin through an external
series resistor and RF choke inductor. Because DC biasing is present on this
pin, a DC blocking capacitor should be used in most applications (see
application schematic). The supply side of the bias network should be well
bypassed.
Same as Pin 2.
Application Schematic for Operation at 850 MHz
Recommended Bias Resistor Values
Supply Voltage(Vs)
8V
9V
12V
15V
Rbias (Ohms)
@ 65 mA
47
62
110
160
Rbias (Ohms)
@ 80 mA
39
51
91
130
1uF
68pF
Rbias
VS
33nH
50 ohm
microstrip
50 ohm
microstrip
2
1
3
100pF
100pF
4
Application Schematic for Operation at 1950 MHz
1uF
22pF
Rbias
VS
22nH
50 ohm
microstrip
50 ohm
microstrip
2
1
3
68pF
522 Almanor Ave., Sunnyvale, CA 94085
4
Phone: (800) SMI-MMIC
4
68pF
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary
Preliminary
SNA-586 DC-5GHz Cascadable MMIC Amplifier
S21, ID=65mA, T=25°C
25
S12, ID=65mA, T=25°C
-10
20
-15
dB
dB
15
-20
10
5
-25
0
2
4
6
8
0
Frequency GHz
6
8
S22, ID=65mA, T=25°C
0
-5
-5
dB
4
Frequency GHz
S11, ID=65mA, T=25°C
0
2
-10
dB
-10
-15
-15
-20
-20
-25
-25
0
2
4
Frequency GHz
6
8
0
4
6
8
Frequency GHz
S22, ID=65mA, Ta=25°C
S11, ID=65mA, Ta=25°C
Freq. Min = 0.05 GHz
Freq. Max = 10 GHz
Freq. Min = 0.05 GHz
Freq. Max = 10 GHz
F = 10 GHz
F = 10 GHz
522 Almanor Ave., Sunnyvale, CA 94085
2
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary
Preliminary
SNA-586 DC-5GHz Cascadable MMIC Amplifier
VS
Part Number Ordering Information
Rbias
Cbypass
Cblock
Cblock
Part Number
Reel Size
Devices/Reel
SNA-586
7"
1000
Caution ESD Sensitive:
Lchoke
Appropriate precautions in handling, packaging
and testing devices must be observed.
IN
OUT
Part Symbolization
The part will be symbolized with an “S5” designator on
the top surface of the package.
STANFORD MICRODEVICES
ECB-100330 Rev B
SOT-86 Eval Board
Evaluation Board Layout
PCB Pad Layout
S5
Package Dimensions
S5
Dimensions are in inches [mm]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
6
http://www.stanfordmicro.com
EDS-101397 Rev A