Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. SXH-189 5-2000 MHz Medium Power GaAsHBT Amplifier These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Product Features • Patented High Reliability GaAs HBT Technology • High 3rd Order Intercept : +39 dBm typ. dBm Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 • IP3 IP3 P1dB Applications • PCS, Cellular Systems • High Linearity IF Amplifiers P1dB Gain(dB) Gain(dB) 850 MHz Symbol at 1960 MHz Surface-Mountable Power Plastic Package 1960 MHz Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Units Min. Typ. P 1dB Output Power at 1dB Compression f = 850 MHz f =1960 MHz dB m dB m S 21 Small signal gain f = 850 MHz f =1960 MHz dB dB S11 Input VSWR f = 850 MHz f =1960 MHz - 1.5:1 1.9:1 IP3 Third Order Intercept Point f = 850 MHz f =1960 MHz dB m dB m 39.0 39.0 NF Noise Figure f = 850 MHz f =1960 MHz dB dB 5.0 5.0 Device Current V s = 8V Rbias = 27 ohms Vdevice » 5V mA Id Rth, j-l Thermal Resitance (junction - lead) ° C/W Max. 23.0 23.0 17.5 80 19.5 14.0 100 130 108 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101247 Rev D Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier 850 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency 25 25 23 25C 19 21 17 85C 15 825 850 875 900 925 950 800 825 850 875 Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 950 44 42 S22 S11 40 25C 36 S12 850 900 34 800 950 825 850 875 Device Current (mA) -40C 85C 36 34 6 9 12 180 160 140 120 100 80 60 40 20 0 950 25C -40C 85C 0 15 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 925 Device Current vs. Source Voltage 25C 3 900 MHz Third Order Intercept vs Tone Power 40 -40C 85C 38 42 dBm 925 MHz MHz 0 900 MHz 5 0 -5 -10 -15 -20 -25 -30 -35 800 38 -40C 25C 22 20 800 dB 21 85C -40C dB 23 dBm dBm 24 2 4 6 8 10 VS (V) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101247 Rev D Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier 1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 Gain vs. Frequency P1dB vs Frequency 25 20 18 -40C 23 -40C 16 25C dB dBm 24 85C 25C 22 14 21 12 85C 20 1930 10 1940 1950 1960 1970 1980 1990 1930 1940 1950 1960 1970 1980 MHz MHz Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 0 1990 43 -5 S22 41 S11 -15 dBm dB -10 -20 25C 85C 39 -40C -25 37 S12 -30 -35 1930 1940 1950 1960 1970 1980 35 1930 1990 1940 1950 1960 MHz Third Order Intercept vs Tone Power Device Current (mA) 41 dBm 25C 39 85C -40C 35 33 0 3 6 9 12 180 160 140 120 100 80 60 40 20 0 1990 25C -40C 85C 0 15 2 4 6 8 10 VS (V) POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 1980 Device Current vs. Source Voltage 43 37 1970 MHz Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101247 Rev D Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier 850 MHz Application Circuit Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) 7V 8V 10V Rbias (Ohms) 18 27 47 62 Power Rating 0.5W 1.0W 1.5W 2.0W Rbias 0.1 F (SIZE A) 68pF 12V 390 1000pF 180 390 Ohms 180 Ohms 100 pF Z=50, 12.9° 100 pF Rbias 33 nH 33 nH 0.1uF RFin RFout 1000pF 100pF SXH-189 100pF 5.6 pF 33nH 33nH 5.6pF 100pF SXH-189 850 MHz Schematic STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 850 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Vs = 5V 0.1 F (SIZE A) 2 20.0 Input Return Loss (dB) -22.8 Output IP3 (dBm) 37.7* P1dB (dBm) 23.0 1000 pF (Rohm) UMZ1N 1 5 *Note: IP3 performance degraded due to lower (4.5V) device voltage. 33 nH 3 7509 100 pF Vdev 4 1.8 K9 850 M H z Small Signal Gain (dB) Rbias=4.3 220 6 Frequency 68 pF 100 pF Z=50, 12.9° GND 0.1 uF UMZ1N SXH-189 220 5.6 pF 68pF 4.3 1000pF 1.8K RF IN VCC 33nH RF OUT 1 850 MHz Schematic 750 100pF 100pF 5.6pF NOTE: Reference Application Note AN-023 for more information on Active Current Feedback Bias Circuit. 850 MHz Active Bias Evaluation Board Layout ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 522 Almanor Ave., Sunnyvale, CA 94085 STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-100xxx- SOT-89 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101247 Rev D Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier 1960 MHz Application Circuit Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) 7V 8V 10V Rbias (Ohms) 18 27 47 62 Power Rating 0.5W 1.0W 1.5W 2.0W Rbias 0.1 F (SIZE A) 12V 22pF 390 Rbias 1000pF 180 22nH 390 Ohms 180 Ohms 22nH Z=50, 45.5° 68pF 68pF 68 pF 0.1uF 1000pF 22pF RFin 22nH 22nH RFout 68pF SXH-189 1.8 pF SXH-189 1.8pF 1960 MHz Schematic STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 1960 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Vs = 5V 0.1 F (SIZE A) 220 (Rohm) UMZ1N 2 6 1 Frequency 22 pF -12.1 Output IP3 (dBm) 38.0* P1dB(dBm) 23.3 *Note: IP3 performance degraded due to lower (4.5V) device voltage. Vdev 4 5 1.8 K9 14.9 Input Return Loss (dB) Rbias=4.3 1000 pF 1960 M H z Small Signal Gain (dB) 22nH GND 3 Z=50, 45.5° 7509 68pF 0.1 uF UMZ1N 220 68 pF SXH-189 22pF 4.3 1000pF 1.8K RF IN 1.2 pF VCC RF OUT 22nH 1 68pF 1960 MHz Schematic 750 68pF 1.2pF NOTE: Reference Application Note AN-023 for more information on Active Current Feedback Bias Circuit. 1960 MHz Active Bias Evaluation Board Layout ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 522 Almanor Ave., Sunnyvale, CA 94085 STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-100xxx- SOT-89 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101247 Rev D Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier Absolute Maximum Ratings Parameter Absolute Maximum Device Voltage 6V Device Current 200mA Power Dissipation 1500mW RF Input Power 100mW Junction Temperature +150C Operating Temperature -40C to +85C Storage Temperature -65C to +150C Part Number Ordering Information Part Number Devices Per Reel Reel Siz e SXH-189 1000 7" Part Symbolization The part will be symbolized with a “XA2” designator on the top surface of the package. Caution: ESD sensitive Package Dimensions Appropriate precautions in handling, packaging and testing devices must be observed. Pin Description Pin # Function 1 B a se 2 GND & Emitter 3 Collector 4 GND & Emitter Description Base pin. 4 Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector pin. XA2 2 1 3 Same as Pin 2 PCB Pad Layout Recommended via and mounting hole pattern (For RF Ground and Thermal considerations) DIMENSIONS ARE IN INCHES [MM] Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101247 Rev D