RoHS UMZ1N UMZ1N Multi-Chip TRANSISTOR (NPN/PNP) SOT-363 FEATURES Power dissipation PCM: 150 D T ,. L mW (Tamb=25℃) Collector current ICM: 150/-150 mA Collector-base voltage V(BR)CBO: 60/-60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TR1(NPN) ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Test unless otherwise specified) IC conditions Collector-base breakdown voltage V(BR)CBO Ic=50µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO O C O N IE=50µA, IC=0 MIN TYP V 50 V 7 V ICBO Emitter cut-off current IEBO DC current gain hFE(1) VCE=6V, IC=1mA VCE(sat) IC=50mA, IB=5mA fT VCE=12V, IC=2mA, f=100MHz 180 VCB=12V, IE=0, f=1MHz 2 C E L Collector-emitter saturation voltage Transition frequency Collector output capacitance Cob VCB=60V, IE=0 0.1 µA VEB=7V, IC=0 0.1 µA TR2(PNP) ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter J E E Symbol UNIT 60 Collector cut-off current R T MAX Test 120 560 0.4 V MHz 3.5 pF MAX UNIT unless otherwise specified) conditions MIN TYP Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -6 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-6V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-6V, IC=-1mA VCE(sat) IC=-50mA, IB=-5mA fT VCE=-12V, IC=2mA, f=100MHz 140 Cob VCB=-12V, IE=0, f=1MHz 4 W Collector-emitter saturation voltage Transition frequency Collector output capacitance WEJ ELECTRONIC CO. Http:// www.wej.cn 120 560 -0.5 V MHz 5 E-mail:[email protected] pF