UMZ1N 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E L 2SA1037AK and 2SC2412K are housed independently in a package. Transistor elements independent, eliminating interference. Mounting cost and area can be cut in half. B MARKING AND EQUIVALENT CIRCUIT 6 5 3 C 4 2 B F 1 E C H J K DG Z1 TR2 1 2 REF. TR1 A B C D E F 3 4 5 E B 6 C Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VCBO VCEO VEBO IC PC TJ, TSTG 60 50 7 0.15 0.15 150, -55~150 V V V A W ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Collector Power Dissipation Junction & Storage Temperature TR1 NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL MIN. TYP. MAX. UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob 60 50 7 120 - 180 2.0 0.1 0.1 560 0.4 3.5 V V V µA µA TEST CONDITIONS IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=12V, IC=2mA, f=100MHz VCB=12V, IE=0, f=1MHz V MHz pF TR2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current – Continuous IC -0.15 A Collector Power Dissipation PC 0.15 W TJ, TSTG 150, -55~150 ℃ Junction & Storage Temperature TR2 PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B SYMBOL MIN. TYP. MAX. UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob -60 -50 -6 120 - 140 - -0.1 -0.1 560 -0.5 5 V V V µA µA V MHz pF TEST CONDITIONS IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-60V, IE=0 VEB=-6V, IC=0 VCE=-6V, IC=-1mA IC=-50mA, IB=-5mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 4 UMZ1N Elektronische Bauelemente 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) TYPICAL CHARACTERISTICS TR1 (NPN) http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 UMZ1N Elektronische Bauelemente 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) TYPICAL CHARACTERISTICS (cont’d) TR1 (NPN) http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 UMZ1N Elektronische Bauelemente 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) TYPICAL CHARACTERISTICS TR2 (PNP) http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 4 of 4