STS7PF30L P-CHANNEL 30V - 0.016Ω - 7A SO-8 STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STS7PF30L ■ ■ ■ VDSS RDS(on) ID 30 V < 0.021 Ω 7A TYPICAL RDS(on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±20 V ID Drain Current (continuous) at TC = 25°C 7 A ID Drain Current (continuous) at TC = 100°C 4.4 A Drain Current (pulsed) 28 A Total Dissipation at TC = 25°C 2.5 W IDM PTOT (● ) Pulse width limited by safe operating area December 2002 Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/6 STS7PF30L THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Max 50 °C/W 150 °C –55 to 150 °C Maximum Lead Temperature For Soldering Purpose Typ Storage Temperature (#) When mounted on 1 inch2 FR4 Board, 2 oz of Cu and t ≤ 10s ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERRWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 30 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 1.6 2.5 V VGS = 10V, ID = 3.5A 0.011 0.016 0.021 Ω VGS = 4.5V, ID = 3.5A 0.016 0.022 0.028 Ω Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance DYNAMIC Symbol 2/6 Parameter Test Conditions gfs Forward Transconductance VDS = 10V, ID = 3.5A 16 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 2600 pF Coss Output Capacitance 523 pF Crss Reverse Transfer Capacitance 174 pF STS7PF30L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON(2) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 15V, ID = 3.5A RG = 4.7Ω VGS = 4.5 V (Resistive Load, Figure 3) VDD =15 V, ID = 7 A, VGS = 4.5V Typ. Max. Unit 68 ns 54 ns 28 8.8 12 38 nC nC nC Typ. Max. Unit SWITCHING OFF(2) Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD =15 V, ID = 3.5 A, RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) 65 23 ns ns SOURCE DRAIN DIODE (2) Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 7 A Source-drain Current (pulsed) 28 A Forward On Voltage ISD = 7 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7A, di/dt = 100A/µs, VDD = 24 V, Tj = 150°C (see test circuit, Figure 5) Min. Typ. 1.2 40 46 2.3 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STS7PF30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STS7PF30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 e3 3.81 0.050 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 5/6 STS7PF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 6/6