STS3DNF30L ® N - CHANNEL 30V - 0.055Ω - 3.5A - SO-8 PowerMESH MOSFET PRELIMINARY DATA TYPE STS3DNF30L ■ ■ ■ V DSS R DS(on) ID 30 V < 0.065 Ω 3.5 A TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFAC MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCS ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID IDM (•) P tot Value Unit Drain-source Voltage (V GS = 0) Parameter 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V Drain Current (continuous) at T c = 25 C Single Operation Drain Current (continuous) at T c = 100 o C Single Operation 3.5 A 2.2 A Drain Current (pulsed) 14 A 2 1.6 W W Gate-source Voltage o o Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Single Operation (•) Pulse width limited by safe operating area December 1998 1/5 STS3DNF30L THERMAL DATA R thj-amb TJ T stg o 78 62.5 150 -55 to 150 *Thermal Resistance Junction-ambient Singe Operation Max Thermal Resistance Junction-ambient Dual Operation Max Maximum Lead Temperature For Soldering Purpose Storage Temperature o C/W C/W o C o C (*) Mounted on FR-4 board (t ≤ 10 sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-Source Leakage Current (V DS = 0) Min. Typ. Max. 30 Unit V T c = 125 o C V GS = ± 20 V 1 10 µA µA ±100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance I D(on) I D = 250 µA V GS = 10 V V GS = 4.5 V Min. Typ. Max. Unit 1 1.7 2.5 V 0.055 0.06 0.065 0.09 Ω Ω I D = 1.75 A I D = 1.75 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 3.5 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Min. Typ. Forward Transconductance V DS > I D(on) x R DS(on)max ID = 6 A 6 Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 420 62 20 f = 1 MHz Max. Unit S 550 80 30 pF pF pF STS3DNF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 15 V R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V Min. ID = 2 A V GS = 4.5 V I D =4 A V GS = 4.5 V Typ. Max. Unit 13 30 17 40 ns ns 8 3.2 2.6 11 nC nC nC Typ. Max. Unit 5 9 20 7 12 26 ns ns ns Typ. Max. Unit 3.5 14 A A 1.2 V SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V R G = 4.7 Ω Min. ID = 4 A V GS = 4.5 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 3.5 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A V DD = 15 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C 23 ns 0.134 µC 1.2 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STS3DNF30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 5.0 0.188 0.196 6.2 0.228 c1 45 (typ.) D 4.8 E 5.8 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 4/5 STS3DNF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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