STMICROELECTRONICS STS3DNF30L

STS3DNF30L
®
N - CHANNEL 30V - 0.055Ω - 3.5A - SO-8
PowerMESH MOSFET
PRELIMINARY DATA
TYPE
STS3DNF30L
■
■
■
V DSS
R DS(on)
ID
30 V
< 0.065 Ω
3.5 A
TYPICAL RDS(on) = 0.055 Ω
STANDARD OUTLINE FOR EASY
AUTOMATED SURFAC MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCS
■
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
V DGR
V GS
ID
IDM (•)
P tot
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
30
V
Drain- gate Voltage (R GS = 20 kΩ)
30
V
± 20
V
Drain Current (continuous) at T c = 25 C
Single Operation
Drain Current (continuous) at T c = 100 o C
Single Operation
3.5
A
2.2
A
Drain Current (pulsed)
14
A
2
1.6
W
W
Gate-source Voltage
o
o
Total Dissipation at T c = 25 C Dual Operation
Total Dissipation at T c = 25 o C Single Operation
(•) Pulse width limited by safe operating area
December 1998
1/5
STS3DNF30L
THERMAL DATA
R thj-amb
TJ
T stg
o
78
62.5
150
-55 to 150
*Thermal Resistance Junction-ambient Singe Operation Max
Thermal Resistance Junction-ambient Dual Operation Max
Maximum Lead Temperature For Soldering Purpose
Storage Temperature
o
C/W
C/W
o
C
o
C
(*) Mounted on FR-4 board (t ≤ 10 sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
V GS = 0
I DSS
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-Source Leakage
Current (V DS = 0)
Min.
Typ.
Max.
30
Unit
V
T c = 125 o C
V GS = ± 20 V
1
10
µA
µA
±100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 10 V
V GS = 4.5 V
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.055
0.06
0.065
0.09
Ω
Ω
I D = 1.75 A
I D = 1.75 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
3.5
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Min.
Typ.
Forward
Transconductance
V DS > I D(on) x R DS(on)max
ID = 6 A
6
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
V GS = 0
420
62
20
f = 1 MHz
Max.
Unit
S
550
80
30
pF
pF
pF
STS3DNF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 15 V
R G = 4.7 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V
Min.
ID = 2 A
V GS = 4.5 V
I D =4 A
V GS = 4.5 V
Typ.
Max.
Unit
13
30
17
40
ns
ns
8
3.2
2.6
11
nC
nC
nC
Typ.
Max.
Unit
5
9
20
7
12
26
ns
ns
ns
Typ.
Max.
Unit
3.5
14
A
A
1.2
V
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 24 V
R G = 4.7 Ω
Min.
ID = 4 A
V GS = 4.5 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 3.5 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 4 A
V DD = 15 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
23
ns
0.134
µC
1.2
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STS3DNF30L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
5.0
0.188
0.196
6.2
0.228
c1
45 (typ.)
D
4.8
E
5.8
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
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STS3DNF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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