STMICROELECTRONICS STS3DPF30L

STS3DPF30L
®
DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
STS3DPF30L
■
■
■
V DSS
R DS(on)
ID
30 V
< 0.16 Ω
3A
TYPICAL RDS(on) = 0.145 Ω
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature Size
" strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGMENT IN CELLULAR
PHONES
■ DC-DC CONVERTER
SO-8
INTERNAL SCHEMATIC DIAGRAM
■
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
V DGR
V GS
ID
IDM (•)
P tot
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
30
V
Drain- gate Voltage (R GS = 20 kΩ)
30
V
± 20
V
3
A
1.9
A
12
A
2
1.6
W
W
Gate-source Voltage
o
Drain Current (continuous) at Tc = 25 C
Single Operation
Drain Current (continuous) at T c = 100 o C
Single Operation
Drain Current (pulsed)
o
Total Dissipation at T c = 25 C Dual Operation
Total Dissipation at T c = 25 o C Single Operation
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
1/5
STS3DPF30L
THERMAL DATA
R thj-amb
Tj
Tstg
o
78
62.5
150
-55 to 150
*Thermal Resistance Junction-ambient
Single Operation
Dual Operation
Maximum Operating Junction Temperature
Storage Temperature
o
C/W
C/W
o
C
o
C
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
30
V GS = 0
I DSS
Min.
Unit
V
T c = 125 o C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 10 V
V GS = 4.5 V
Min.
1
I D = 1.5 A
I D = 1.5 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Typ.
1.6
2.5
V
0.145
0.18
0.16
0.19
Ω
Ω
3
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
Min.
Typ.
Max.
Unit
ID = 3 A
3
S
V GS = 0 V
510
170
55
pF
pF
pF
STS3DPF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Delay Time
Rise Time
V DD = 15 V
I D = 1.5 A
V GS = 4.5 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V I D = 3 A V GS = 4.5 V
Min.
Typ.
Max.
Unit
14.5
37
ns
ns
5.5
1.7
1.8
nC
nC
nC
SWITCHING OFF
Symbol
t d(of f)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
Typ.
Max.
88
23
V DD = 15 V
I D = 1.5 A
V GS = 4.5 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD =3 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 3 A
di/dt = 100 A/µs
V DD = 15 V
T j = 150 o C
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
VGS = 0
T.B.D
Max.
Unit
3
12
A
A
1.2
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STS3DPF30L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
5.0
0.188
0.196
6.2
0.228
c1
45 (typ.)
D
4.8
E
5.8
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
4/5
STS3DPF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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