STSJ100NH3LL N-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8™ STripFET™ III POWER MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE STSJ100NH3LL ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V <0.0035 Ω 100 A TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCE DESCRIPTION The STSJ100NH3LL utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process compled to unique metallization techniques realizes the most advanced low voltage MOSFET in SO-8 ever produced. The exposed slug reduces the R thj-c improving the current capability. PowerSO-8™ INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS DRAIN CONTACT ALSO ON THE BACKSIDE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ± 18 V ID Drain Current (continuous) at TC = 25°C 100 A ID Drain Current (continuous) at TC = 25°C (#) 22 A ID Drain Current (continuous) at TC = 100°C 62.5 A Drain Current (pulsed) 400 A Total Dissipation at TC = 25°C Total Dissipation at TC = 25°C (#) 70 3 W W IDM(•) Ptot (•) Pulse width limited by safe operating area. September 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STSJ100NH3LL THERMAL DATA Rthj-c Rthj-amb Tj Tstg Thermal Resistance Junction-case (#)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max Max 1.8 42 150 -55 to 150 °C/W °C/W °C °C (#) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 18 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 50 A ID = 50 A Min. Typ. 1 V 0.0027 0.0035 0.0035 0.005 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/6 Parameter Test Conditions gfs (*) Forward Transconductance VDS=10 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 12 A Min. 30 S 4450 655 50 pF pF pF STSJ100NH3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 50 A VDD = 15 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 1) 18 50 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=100A VGS=4.5V 32 12.5 10 43 nC nC nC Typ. Max. Unit (see test circuit, Figure 2) ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 50 A VDD = 15 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 75 8 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) VSD (*) trr Qrr IRRM Test Conditions Forward On Voltage ISD = 100 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 100 A VDD = 25 V Tj = 150°C (see test circuit, Figure 3) Min. Typ. VGS = 0 32 34 2.1 Max. Unit 100 400 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. 3/6 STSJ100NH3LL Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 Fig. 2: Gate Charge test Circuit STSJ100NH3LL 5/6 STSJ100NH3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6